EAB450M12XM3

EAB450M12XM3 VDS 1200 V IDS 450 A Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module Technical Features Package 80 x 53 x 19 mm • • • • High Power Density Footprint High Junction Temperature (175 °C) Operation Low Inductance (6.7 nH) Design Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate Applications • Motor & Traction Drives • Vehicle Fast Chargers • Automotive Test Equipment System Benefits • Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design. • Isolated integrated temperature sensing enables high-level temperature protection. • Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection. Maximum Parameters (Verified by Design) Symbol Parameter VDS max Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value -8 +19 VGS op Gate-Source Voltage, Recommended Operating Value -4 +15 Static Typ. Max. 450 VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20 DC Continuous Drain Current ISD DC Source-Drain Current 225 900 ISD pulsed Maximum Pulsed Source-Drain Current 900 Rev. A, 2020-10-07 EAB450M12XM3 Test Conditions Note -40 Transient < 100 ns VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C 450 DC Source-Drain Current (Body Diode) Maximum Virtual Junction Temperature under Switching Conditions V 409 IDS pulsed Maximum Pulsed Drain-Source Current TVJ op Unit 1200 IDS ISD BD 1 Min. 175 A VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C tp max limited by TVJ op VGS = 15 V, TC = 25 ˚C °C 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Fig. 32 MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. VBR DSS Drain-Source Breakdown Voltage 1200 VGS th Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS RDS on 1.8 Typ. 2.5 3.6 5 500 Gate-Source Leakage Current 0.05 1.3 Drain-Source On-State Resistance (MOSFET Only) 2.6 3.7 4.6 355 gfs Transconductance EOn Turn-On Switching Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 11.0 11.7 13.0 EOff Turn-Off Switching Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 10.1 11.3 12.1 RG int Internal Gate Resistance 2.5 Ciss Input Capacitance 38.0 Coss Output Capacitance 1.5 Crss Reverse Transfer Capacitance 90 QGS Gate to Source Charge 355 QGD Gate to Drain Charge 500 QG Total Gate Charge 1330 FET Thermal Resistance, Junction to Case 0.110 RTH JC Max. Unit V μA mΩ S 360 mJ Ω nF pF nC 0.145 Test Conditions Note VGS = 0 V, TVJ = -40°C VDS = VGS, IDS = 132 mA VGS = 0 V, VDS = 1200 V VGS = 15 V, VDS = 0 V VGS = 15 V, IDS = 450 A VGS = 15 V, IDS = 450 A, TVJ = 175 °C VDS = 20 V, IDS = 450 A VDS = 20 V, IDS = 450 A, TVJ = 175 °C VDS = 600 V, IDS = 450 A, VGS = -4 V/15 V, RG ext = 0.0 Ω, L = 13.6 μH VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 2 Fig. 3 Fig. 4 Fig. 11 Fig. 13 Fig. 9 VDS = 800 V, VGS = -4 V/15 V IDS = 450 A Per IEC 60747-8-4 pg. 21 °C/W Fig. 17 Body Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Typ. 4.7 Max. Unit VSD Body Diode Forward Voltage tRR Reverse Recovery Time 52 ns QRR Reverse Recovery Charge 6.6 IRR Peak Reverse Recovery Current 195 μC ERR Reverse Recovery Energy TJ = 25 °C TJ = 125 °C TJ = 175 °C 0.2 1.1 1.9 Rev. A, 2020-10-07 2 Min. EAB450M12XM3 4.2 V A mJ Test Conditions VGS = -4 V, ISD = 450 A VGS = -4 V, ISD = 450 A, TJ = 175 °C Note Fig. 7 VGS = -4 V, ISD = 450 A, VDS = 600 V di/dt = 8 A/ns, TJ = 175 °C VDS = 600 V, IDS = 450 A, VGS = -4 V/15 V, RG ext = 0.0 Ω, L = 13.6 μH 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Fig. 14 Temperature Sensor (NTC) Characteristics Symbol Parameter R25 ∆R/R P25 Min. Typ. Rated Resistance Max. 4.7 Unit kΩ Tolerance of R25 ±1 % Maximum Power Dissipation 50 mW Test Conditions TNTC = 25 °C Steinhart-Hart Modified Coefficients for R/T Computation: A B C D TNTC < 25 °C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07 TNTC ≥ 25 °C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07 Module Physical Characteristics Symbol Parameter Min. R3-1 Package Resistance, M1 0.72 R1-2 Package Resistance, M2 0.63 LStray Stray Inductance 6.7 TC Case Temperature W Weight MS Mounting Torque Visol Case Isolation Voltage 4.0 CTI Comparative Tracking Index 600 -40 nH 125 Test Conditions TC = 125 °C, Note11 & 2 TC = 125 °C, Note 1 & 2 Between Terminals 2 and 3 °C g 3.0 4.0 2.0 4.0 5.0 N-m kV Baseplate, M4 bolts Power Terminals, M5 bolts AC, 50 Hz, 1 min 12.5 From 2 to 3, Note22 11.5 From 1 to Baseplate, Note 2 5.7 From 2 to 5, Note 2 14.7 Creepage Distance Unit mΩ 2.0 13.7 Note11 Note22 Max. 175 Clearance Distance mm From 5 to Baseplate, Note 2 From 2 to 3, Note 2 14.0 From 1 to Baseplate, Note 2 14.7 From 2 to 5, Note 2 14.3 From 5 to Baseplate, Note 2 Total effective resistance (per switch position) = MOSFET RDS(on) + switch position package resistance Numbers reference the connections from the Schematic and Pin Out section of this document Rev. A, 2020-10-07 3 Typ. EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Typical Performance 900 700 600 Normalized On-Resistance (p.u.) 800 Drain-Source Current, IDS (A) 2.0 Conditions: tp < 300 μs VGS = 15 V 25 °C -40 °C 500 400 100 °C 125 °C 150 °C 175 °C 300 200 100 0 1.8 1.0 2.0 3.0 4.0 175 °C 150 °C 1.6 125 °C 1.4 100 °C 1.2 -40 °C 1.0 0.8 0.0 Conditions: tp < 300 μs VGS = 15 V 5.0 25 °C 0 100 200 Figure 1. Output Characteristics for Various Junction Temperatures Normalized On-Resistance (p.u.) 1.8 1.6 1.4 700 Conditions: tp < 300 μs VGS = 15 V ID = 450 A 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 0 50 100 150 600 400 200 25 °C -40 °C 100 900 800 25 °C -40 °C 300 100 °C 125 °C 150 °C 175 °C 200 100 0 0.0 1.0 2.0 0.0 2.0 3.0 4.0 5.0 6.0 Figure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 15 V 4 EAB450M12XM3 4.0 6.0 8.0 10.0 700 Conditions: tp < 300 μs VGS = 0.0 V 175 °C 150 °C 125 °C 100 °C 600 500 400 25 °C 300 -40 °C 200 100 Source-Drain Voltage, VSD (V) Rev. A, 2020-10-07 900 Figure 4. Transfer Characteristic for Various Junction Temperatures 600 400 800 Gate-Source Voltage, VGS (V) Conditions: tp < 300 μs VGS = 15 V 500 700 300 0 200 Source-Drain Current, ISD (A) Source-Drain Current, ISD (A) 700 600 175 °C 150 °C 125 °C 100 °C 500 Figure 3. Normalized On-State Resistance vs. Junction Temperature 800 500 Conditions: tp < 300 μs VDS = 20 V Virtual Junction Temperature, TVJ (°C) 900 400 Figure 2. Normalized On-State Resistance vs. Drain Current for Various Junction Temperatures Drain-Source Current, IDS (A) 2.0 300 Drain-Source Current, IDS (A) Drain-Source Voltage, VDS (V) 0 0.0 1.0 2.0 3.0 4.0 5.0 Source-Drain Voltage, VSD (V) Figure 6. 3rd Quadrant Characteristic vs. Junction Temperatures, VGS = 0 V (Body Diode) 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. 6.0 Typical Performance 900 100.00 Conditions: tp < 300 μs VGS = - 4.0 V Source-Drain Current, ISD (A) 800 700 Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz Ciss 10.00 500 Capacitance (nF) 175 °C 150 °C 125 °C 100 °C 600 400 300 25 °C -40 °C 200 Coss 1.00 0.10 Crss 100 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.01 7.0 0 Source-Drain Voltage, VSD (V) Crss 150 Threshold Voltage, VGS th (V) Capacitance (nF) 0.10 100 3.0 2.0 1.5 1.0 0.5 0.0 200 -50 0 100 150 200 Figure 10. Threshold Voltage vs. Junction Temperature 60 80 Conditions: TVJ = 25 °C VDS = 600 V RG(ext) = 0.0 Ω VGS = -4/+15 V L = 13.6 µH 40 EOn + EOff 30 EOff EOn 20 10 ERR 0 200 400 600 800 Drain-Source Current, IDS (A) Figure 11. Switching Energy vs. Drain Current (VDS = 600 V) Rev. A, 2020-10-07 EAB450M12XM3 Conditions: TVJ = 25 °C VDS = 800 V RG ext = 0.0 Ω VGS = -4/+15 V L = 13.6 µH 70 Switching Energy (mJ) 50 Switching Energy (mJ) 50 Junction Temperature, TJ (°C) Figure 9. Typical Capacitances vs. Drain to Source Voltage (0 - 1200 V) 5 1,200 2.5 Drain-Source Voltage, VDS (V) 0 1,000 Conditions: VGS = VDS IDS = 132 mA 3.5 1.00 50 800 4.0 Coss 0 600 Figure 8. Typical Capacitances vs. Drain to Source Voltage (0 - 200 V) Conditions: TJ = 25 °C VAC = 25 mV f = 100 kHz Ciss 10.00 0.01 400 Drain-Source Voltage, VDS (V) Figure 7. 3rd Quadrant Characteristic vs. Junction Temperatures, VGS = - 4 V (Body Diode) 100.00 200 1000 60 50 EOn + EOff 40 EOff 30 EOn 20 10 0 ERR 0 200 400 600 800 Drain-Source Current, IDS (A) Figure 12. Switching Energy vs. Drain Current (VDS = 800 V) 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. 1000 Typical Performance 30 2.5 Reverse Recovery Energy, ERR (mJ) Switching Energy (mJ) 25 20 15 EOn EOff 10 Conditions: IDS = 450 A, VDS =600 V RG ext = 0.0 Ω, VGS = -4/+15 V L = 13.6 µH 5 0 Conditions: IDS = 450 A, RG ext = 0.0 Ω, VGS = -4/+15 V L = 13.6 µH EOn + EOff 0 50 100 150 200 2.0 1.5 ERR (VDS = 600 V) 1.0 0.5 0.0 0 50 Junction Temperature, TVJ (°C) EOn + EOff Conditions: IDS = 450 A, VDS = 600 V TVJ = 25 °C, VGS = -4/+15 V L = 13.6 µH 0.20 60 0.15 50 EOn 40 0.10 EOff 30 20 0.05 10 0 200 Figure 14. Reverse Recovery Energy vs. Junction Temperature Reverse Recovery Energy, ERR (mJ) Switching Energy (mJ) 70 150 0.25 Conditions: IDS = 450 A, VDS =600 V TJV = 25 °C, VGS = -4/+15 V L = 13.6 µH 80 100 Junction Temperature, TVJ (°C) Figure 13. MOSFET Switching Energy vs. Junction Temperature 90 ERR (VDS = 800 V) ERR 0 2 4 6 8 10 0.00 12 0 2 External Gate Resistor, RG ext (Ω) 4 6 8 10 12 External Gate Resistor, RG ext (Ω) Figure 15. MOSFET Switching Energy vs. External Gate Resistance Figure 16. Reserve Recovery Energy vs. External Gate Resistance 1000.00 1.0E-01 1.0E-02 1.0E-03 0.5 0.3 Drain-Source Current, IDS (A) Transient Thermal Impedance Junction to Case, ZTH JC (°C/W) 1.0E+00 0.1 0.05 0.02 0.01 1.0E-04 Single Pulse 1.0E-05 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 Time, tp (s) Figure 17. MOSFET Junction to Case Transient Thermal Impedance, ZTH JC (°C/W) Rev. A, 2020-10-07 6 EAB450M12XM3 10 μs Limited by RDS(on) 100.00 100 μs 1 ms 100 ms 10.00 1.00 Conditions: TC = 25 °C D=0 Parameter: tp 0.10 0.01 0.1 1 10 100 Drain-Source Voltage, VDS (V) Figure 18. Forward Bias Safe Operating Area (FBSOA) 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. 1000 Typical Performance 600 Drain-Source DC Current, IDS (DC) (A) 1000 Drain-Source Current, IDS (A) 900 800 Chip 700 Module 600 500 400 Conditions: TVJ = 175 °C RG(ext) = 0.0 Ω LStray-system = 6.0 nH LStray-module = 6.7 nH 300 200 100 0 500 200 400 600 800 1000 Drain-Source Voltage, VDS (V) Wirebond Limit 400 300 200 100 0 0 Conditions: TVJ ≤ 175 °C 1200 -50 Output Current, IOut (Arms) FET Power Dissipation, PD (W) 800 600 400 200 0 50 100 150 Case Temperature, TC (°C) Figure 21. Maximum Power Dissipation Derating vs. Case Temperature (Per Position) Rev. A, 2020-10-07 7 EAB450M12XM3 200 Conditions: VDS = 800 V TC = 90 °C TVJ = 175 °C RG ext = 0.0 Ω MF = 1 500 1000 -50 150 600 1200 0 100 Figure 20. Continuous Drain Current Derating vs. Case Temperature Conditions: TVJ ≤ 175 °C 1400 50 Case Temperature, TC (°C) Figure 19. Reverse Bias Safe Operating Area (RBSOA) 1600 0 200 400 300 200 100 0 0 20 40 60 80 Switching Frequency, FS (kHz) Figure 22. Typical Output Current Capability vs. Switching Frequency (Inverter Application) 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Typical Timing Characteristics 300 250 200 700 600 td(off) 150 100 500 400 300 tr tf 50 td(on) 200 td(on) tr tf 100 0 0 0 200 400 600 Source Current, IS (A) 800 1000 0 Figure 23. Timing vs. Source Current 300 150 100 tf 50 10 20 dv/dtON dv/dtOFF 15 di/dtOFF 10 di/dtON 5 tr td(on) 0 0 0 50 100 150 Junction Temperature, TVJ (°C) 0 200 Figure 25. Timing vs. Junction Temperature Conditions: TVJ = 25°C VDD = 600 V IS = 450 A LStray-Bussing = 6.0 nH 16 14 12 dv/dtOFF 10 8 dv/dtON 6 di/dtOFF 4 di/dtON 2 200 400 600 Source Current, IS (A) 800 1000 Figure 26. dv/dt and di/dt vs. Source Current 30 Conditions: IS = 450 A VDD = 600 V RG(ext) = 0.0 Ω LStray-Bussing = 6.0 nH 25 di/dt (A/ns) and dv/dt (V/ns) 18 di/dt (A/ns) and dv/dt (V/ns) 4 6 8 External Gate Resistance, RG-EXT (Ω) Conditions: TVJ = 25°C VDD = 600 V RG(ext) = 0.0 Ω LStray-Bussing = 6.0 nH 25 td(off) di/dt (A/ns) and dv/dt (V/ns) Time (ns) 200 2 Figure 24. Timing vs. External Gate Resistance 30 Conditions: VDD = 600 V IS = 450 A RG(ext) = 0.0 Ω VGS = -4/+15 V 250 20 dv/dtON dv/dtOFF 15 di/dtOFF 10 di/dtON 5 0 0 0 2 4 6 8 External Gate Resistance, RG-EXT (Ω) Figure 27. dv/dt and di/dt vs. External Gate Resistance Rev. A, 2020-10-07 8 td(off) Conditions: TVJ = 25°C VDD = 600 V IS = 450 A VGS = -4/+15 V 800 Time (ns) Time (ns) 900 Conditions: TVJ = 25°C VDD = 600 V RG(ext) = 0.0 Ω VGS = -4/+15 V EAB450M12XM3 10 0 50 100 Junction Temperature, TVJ (°C) 150 Figure 28. dv/dt and di/dt vs. Junction Temperature 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. 200 Definitions Figure 29. Turn-off Transient Definitions Figure 30. Turn-on Transient Definitions Figure 31. Reverse Recovery Definitions Figure 32. VGS Transient Definitions Rev. A, 2020-10-07 9 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Schematic and Pin Out 3 4 8 5 9 1 2 3 4 5 6 7 8 9 10 11 2 6 10 7 11 1 Mid VV+ G1 K1 G2 K2 V+ (Overcurrent) V+ (Overcurrent) NTC2 NTC1 PIN NUMBER DESIGNATION Package Dimension (mm) DIMENSION TABLE M5x0.8mm HEX NUT x 3 MAXIMUM BOLT PENETRATION DEPTH: 5.50mm 4.50 ±0.25 X4 A2 B2 PART NUMBER 0.6 E6 D5 E1 D2 D6 C2 B1 0.6 E1 A1 D4 D1 C2 XXXXXXXXXXXX XXXXXXXXXX D2 SERIAL NUMBER 0.6 DIMENSION (mm) A1 80.00 0.30 A2 53.00 0.30 A3 3.00 0.30 B1 71.75 0.30 B2 44.75 0.30 C1 12.00 0.50 C2 24.00 0.50 C3 15.75 D1 (5.50) REF. D2 (31.00) REF. D3 29.50 D4 (12.50) TYP D5 12.50 D6 1.50 E1 (13.50) E2 44.00 E3 2.54 E4 (0.64) E5 18.26 E6 (17.00) DM CODE E3 E3 A3 E4 C1 E5 C3 D3 E2 SYMBOL E4 Rev. A, 2020-10-07 10 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. TOLERANCE (mm) 0.40 0.30 REF. 0.30 0.30 REF. 0.30 0.50 REF. 0.30 REF. Supporting Links & Tools • • • • • • CGD12HBXMP: XM3 Evaluation Gate Driver CGD12HB00D: Differential Transceiver Board for CGD12HBXMP CRD300DA12E-XM3: 300 kW Inverter Kit for Conduction-Optimized XM3 (CPWR-AN30) KIT-CRD-CIL12N-XM3: Dynamic Performance Evaluation Board for the XM3 Module (CPWR-AN31) CPWR-AN28: Module Mounting Application Note CPWR-AN29: Thermal Interface Material Application Note Notes • All parameters are indicative of the product as delivered. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. • The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special precautions are required to realize optimal performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot. • This product is qualified for automotive applications by Wolfspeed standards as documented in the EAB450M12XM3 qualification report. The product validation test procedure was completed using AQG-324 guidelines as documented. Rev. A, 2020-10-07 11 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc.