2N7002HWX

2N7002HW 60 V, N-channel Trench MOSFET 1 December 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 310 mA - 1 1.6 Ω VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 500 mA; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 2N7002HW Nexperia 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 mbb076 S SC-70 (SOT323) 6. Ordering information Table 3. Ordering information Type number Package 2N7002HW Name Description Version SC-70 plastic, surface-mounted package; 3 leads; 1.3 mm pitch; 2 SOT323 mm x 1.25 mm x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code[1] 2N7002HW 2N% [1] % = placeholder for manufacturing site code 2N7002HW Product data sheet All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 2 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 310 mA VGS = 10 V; Tamb = 100 °C [1] - 200 mA - 1.2 A [2] - 260 mW [1] - 310 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - 830 mW Tj junction temperature Tsp = 25 °C -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 310 mA Source-drain diode IS [1] [2] source current Tamb = 25 °C [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-030137 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig. 1. aaa-030138 120 -25 25 75 Normalized total power dissipation as a function of ambient temperature 2N7002HW Product data sheet 0 -75 125 175 Tamb (°C) Fig. 2. -25 75 125 175 Tamb (°C) Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. 1 December 2021 25 © Nexperia B.V. 2021. All rights reserved 3 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET aaa-034228 10 ID (A) 1 tp = 10 µs Limit RDSon = VDS/ID 100 µs 10-1 1 ms DC; Tsp = 25 °C 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 100 ms 10-3 10-1 Fig. 3. 1 10 102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 2N7002HW Product data sheet All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 4 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) [1] [2] Conditions Min Typ Max Unit [1] - 415 480 K/W [2] - 350 400 K/W - - 150 K/W thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 017aaa028 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 102 0.25 0.1 10 0 0.75 0.33 0.2 0.05 0.02 0.01 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa029 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 102 10 0.25 0.75 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10- 3 10- 2 10- 1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002HW Product data sheet All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 5 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 1.1 1.75 2.4 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 60 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 10 V; ID = 500 mA; Tj = 25 °C - 1 1.6 Ω VGS = 10 V; ID = 500 mA; Tj = 150 °C - 2.1 3.3 Ω VGS = 5 V; ID = 50 mA; Tj = 25 °C - 1.3 2 Ω VDS = 10 V; ID = 200 mA; Tj = 25 °C - 400 - mS VDS = 30 V; ID = 300 mA; VGS = 4.5 V; Tj = 25 °C - 0.3 0.5 nC - 0.1 - nC - 0.1 - nC - 34 - pF - 7 - pF - 4 - pF - 2 - ns - 3 - ns IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 6 - ns tf fall time - 4 - ns 0.47 0.75 1.1 V VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage 2N7002HW Product data sheet IS = 115 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 6 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET aaa-034202 0.8 10 V ID (A) aaa-034203 10-3 4.5 V ID (A) 4.0 V 0.6 min 10-4 0.4 typ max 3.5 V 10-5 0.2 3.0 V 0 Fig. 6. VGS = 2.4 V 0 1 2 3 4 VDS (V) 10-6 5 0 1 2 VGS (V) 3 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-034204 7 RDSon ( ) 6 aaa-034205 7 RDSon ( ) 6 3.5 V 3.7 V 5 5 4V 4 4 4.5 V 3 3 2 Tj = 150 °C 2 5V Tj = 25 °C 1 1 VGS = 10 V 0 0 0.2 0.4 0.6 0.8 ID (A) 0 1.0 Tj = 25 °C Fig. 8. Product data sheet 2 4 6 8 10 VGS (V) ID = 1.2 A Drain-source on-state resistance as a function of drain current; typical values 2N7002HW 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 7 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET aaa-034206 1.0 aaa-034207 2.5 ID (A) a 0.8 2.0 0.6 1.5 0.4 0.2 0 1.0 Tj = 150 °C 0.5 Tj = 25 °C 0 1 2 3 4 VGS (V) 0 -60 5 0 60 120 Tj (°C) 180 VDS = 5 V Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-034208 3 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-034209 102 VGS(th) (V) Ciss C (pF) 2 max 10 Coss typ 1 Crss min 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 250 µA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature 2N7002HW 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 8 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET aaa-034210 5 VGS (V) VDS 4 ID 3 VGS(pl) 2 VGS(th) VGS 1 0 QGS2 QGS1 0 0.1 0.2 0.3 QG (nC) QGS 0.4 QGD QG(tot) ID = 300 mA; VDS = 30 V; Tj = 25 °C 003aaa508 Fig. 15. Gate charge waveform definitions Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-034231 1.2 IS (A) 0.8 Tj = 150 °C 0.4 Tj = 25 °C 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 2N7002HW Product data sheet All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 9 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 2N7002HW Product data sheet All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 10 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT323 D B E A X HE y v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 SC-70 Fig. 18. Package outline SC-70 (SOT323) 2N7002HW Product data sheet All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 11 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET 13. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig. 19. Reflow soldering footprint for SC-70 (SOT323) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig. 20. Wave soldering footprint for SC-70 (SOT323) 2N7002HW Product data sheet All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 12 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes 2N7002HW v.2 20211201 Product data sheet - 2N7002HW v.1 Modifications: • 2N7002HW v.1 20211119 2N7002HW Product data sheet Changed document status to "Product data sheet" Preliminary data sheet - All information provided in this document is subject to legal disclaimers. 1 December 2021 - © Nexperia B.V. 2021. All rights reserved 13 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or 2N7002HW Product data sheet All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 14 / 15 2N7002HW Nexperia 60 V, N-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information........................................................ 10 12. Package outline........................................................ 11 13. Soldering................................................................... 12 14. Revision history........................................................13 15. Legal information......................................................14 © Nexperia B.V. 2021. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 1 December 2021 2N7002HW Product data sheet All information provided in this document is subject to legal disclaimers. 1 December 2021 © Nexperia B.V. 2021. All rights reserved 15 / 15