PMN30UNH

PMN30UN 30 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1240 mW 3. Applications • • • • LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -12 - 12 V ID drain current - - 5.7 A - 33 40 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 4.5 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . PMN30UN Nexperia 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G TSOP6 (SOT457) S 017aaa253 6. Ordering information Table 3. Ordering information Type number PMN30UN Package Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN30UN H2 PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 2 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -12 12 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 5.7 A VGS = 4.5 V; Tamb = 25 °C [1] - 4.5 A VGS = 4.5 V; Tamb = 100 °C [1] - 2.9 A - 18 A [2] - 530 mW [1] - 1.24 W - 4.46 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1.2 A Source-drain diode IS source current [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMN30UN Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 29 January 2016 25 © Nexperia B.V. 2017. All rights reserved 3 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET aaa-020605 102 ID (A) tp = 10 µs Limit RDSon = VDS/ID 10 100 µs 1 1 ms 10 ms DC; Tsp = 25 °C 10-1 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 4 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 205 235 K/W [2] - 88 101 K/W [2] - 55 63 K/W - 24 28 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-020456 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . duty cycle = 1 102 0.5 0.25 0.1 10 0.75 0.33 0.2 0.05 0.02 0 1 10-3 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 5 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET aaa-020457 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.25 10 0.1 0.05 0 1 10- 3 0.75 0.33 0.2 0.02 0.01 10- 2 10- 1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 6 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 0.4 0.65 0.9 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 4.5 V; ID = 4.5 A; Tj = 25 °C - 33 40 mΩ VGS = 4.5 V; ID = 4.5 A; Tj = 150 °C - 50 61 mΩ VGS = 2.5 V; ID = 4 A; Tj = 25 °C - 42 52 mΩ VGS = 1.8 V; ID = 1 A; Tj = 25 °C - 54 75 mΩ VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C - 85 200 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 2 A; Tj = 25 °C - 12.6 - S RG gate resistance f = 1 MHz; Tj = 25 °C - 8.7 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 15 V; ID = 3.7 A; VGS = 4.5 V; - 7 12 nC QGS gate-source charge Tj = 25 °C - 0.9 - nC QGD gate-drain charge - 1.7 - nC Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 635 - pF Coss output capacitance Tj = 25 °C - 40 - pF Crss reverse transfer capacitance - 35 - pF td(on) turn-on delay time VDS = 15 V; ID = 3.7 A; VGS = 4.5 V; - 9 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 23 - ns td(off) turn-off delay time - 34 - ns tf fall time - 12 - ns - 0.7 1.2 V Source-drain diode VSD source-drain voltage PMN30UN Product data sheet IS = 1.2 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 7 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET aaa-020606 18 4.5 V 2.5 V ID (A) aaa-012405 10-3 2.2 V ID (A) VGS = 1.8 V 12 6 min 10-4 typ max 10-5 1.5 V 1.2 V 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 4 0 0.5 1 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Fig. 7. Output characteristics: drain current as a function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-020607 0.3 RDSon (Ω) 1.2 V aaa-020608 0.20 RDSon (Ω) 1.5 V 0.15 0.2 0.10 1.8 V 2.2 V 2.5 V 3V 0.1 Tj = 150 °C 0.05 Tj = 25 °C VGS = 4.5 V 0.0 0 6 12 ID (A) 0 18 Tj = 25 °C Fig. 8. Product data sheet 1 2 3 4 VGS (V) 5 ID = 4.5 A Drain-source on-state resistance as a function of drain current; typical values PMN30UN 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 8 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET aaa-020609 18 aaa-012409 2 a ID (A) 1.5 12 1 6 0 Tj = 150 °C 0 Tj = 25 °C 1 2 0.5 VGS (V) 0 -60 3 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-012410 1.5 0 60 120 aaa-012411 Ciss C (pF) 1.0 102 min Coss Crss typ 0.5 0 -60 10 max 0 60 120 Tj (°C) 1 10-1 180 ID = 250 µA; VDS = VGS Product data sheet 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMN30UN 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 103 VGS(th) (V) Tj (°C) Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 9 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET aaa-012413 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 1 0 QGS2 0 2 4 6 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. MOSFET transistor: Gate charge waveform definitions 8 ID = 3.7 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-020610 5 IS (A) 4 3 Tj = 150 °C 2 Tj = 25 °C 1 0 0.0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 10 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET 12. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.95 1.9 0.40 0.25 Dimensions in mm 0.26 0.10 14-10-03 Fig. 18. Package outline TSOP6 (SOT457) 13. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig. 19. Reflow soldering footprint for TSOP6 (SOT457) PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 11 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET 5.3 1.5 (4×) 1.475 0.45 (2×) 5.05 1.475 solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig. 20. Wave soldering footprint for TSOP6 (SOT457) PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 12 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMN30UN v.1 20160129 Product data sheet - - PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 13 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 15 / 16 PMN30UN Nexperia 30 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 7 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 11 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 29 January 2016 PMN30UN Product data sheet All information provided in this document is subject to legal disclaimers. 29 January 2016 © Nexperia B.V. 2017. All rights reserved 16 / 16