PSMN4R5-80YSFX

PSMN4R5-80YSF NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 13 March 2023 Product data sheet 1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • • • • • • • Low Qrr for higher efficiency and lower spiking 100 A ID(max) – demonstrated continuous current rating Low QG × RDSon FOM for high efficiency switching applications Strong avalanche energy rating (Eas) Avalanche rated and 100% tested Ha-free and RoHS compliant LFPAK56 package Wave-solderable 3. Applications • • • • • • Synchronous rectifier in AC-DC and DC-DC Primary side switch in DC-DC BLDC motor control USB-PD adapters Full-bridge and half-bridge applications Flyback and resonant topologies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 80 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 100 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 238 W Tj junction temperature -55 - 175 °C VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 - 3.5 4.5 mΩ VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 - 5.4 6.8 mΩ ID = 25 A; VDS = 40 V; VGS = 10 V; Fig. 14; Fig. 15 3.2 10.7 25 nC 30 60 90 nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit - - 278 mJ IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 40 V; Fig. 18 - 24.5 - nC Simplified outline Graphic symbol Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 48 A; Vsup ≤ 80 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 111 µs; Fig. 4 [1] Source-drain diode Qr [1] recovered charge Protected by 100% test 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain mb D G 1 2 3 4 LFPAK56; PowerSO8 (SOT669) mbb076 S 6. Ordering information Table 3. Ordering information Type number Package PSMN4R5-80YSF Name Description Version LFPAK56; Power-SO8 plastic, single-ended surface-mounted package; 4 terminals SOT669 7. Marking Table 4. Marking codes Type number Marking code PSMN4R5-80YSF 4F5S80Y 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 80 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 80 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 238 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 100 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 100 A PSMN4R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 2 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 Symbol Parameter Conditions Min Max Unit IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 607 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode IS source current Tmb = 25 °C - 100 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 607 A Avalanche ruggedness EDS(AL)S non-repetitive drainID = 48 A; Vsup ≤ 80 V; RGS = 50 Ω; source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 111 µs; Fig. 4 [1] - 278 mJ IAS non-repetitive avalanche Vsup = 80 V; VGS = 10 V; Tj(init) = 25 °C; current RGS = 50 Ω [1] - 48 A [1] Protected by 100% test 03aa16 120 Pder (%) aaa-033384 160 ID (A) 120 80 (1) 80 40 40 0 Fig. 1. 0 50 100 150 Tmb (°C) 0 200 Fig. 2. Product data sheet 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V (1) 100A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Normalized total power dissipation as a function of mounting base temperature PSMN4R5-80YSF 0 Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 3 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 ID (A) aaa-033386 103 Limit RDSon = VDS / ID 102 tp = 10 µs 100 µs 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 1 102 10 VDS (V) 103 Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-033385 102 (1) 10 (2) 1 (3) 10-1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from Fig. 5 junction to mounting base - 0.56 0.63 K/W Rth(j-a) thermal resistance from Fig. 6 junction to ambient Fig. 7 - 42 - K/W - 85 - K/W PSMN4R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 4 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 aaa-033387 1 Zth(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 0.02 single shot 10-2 P δ= Fig. 5. 10-5 10-4 10-3 10-2 T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration aaa-027933 aaa-027935 Copper area 25.4 mm square; 70 µm thick on FR4 board Fig. 6. T t tp 10-3 10-6 tp PCB layout for thermal resistance from junction to ambient 70 µm thick copper on FR4 board Fig. 7. PCB layout with minimum footprint for thermal resistance from junction to ambient 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 72 - - V gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 11 2 3 4 V ID = 1 mA; VDS=VGS; Tj = 175 °C - 1.8 - V Static characteristics V(BR)DSS VGS(th) ID = 1 mA; VDS=VGS; Tj = -55 °C - 3.4 - V ΔVGS(th)/ΔT gate-source threshold voltage variation with temperature 25 °C ≤ Tj ≤ 150 °C - -8 - mV/K IDSS drain leakage current VDS = 80 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 80 V; VGS = 0 V; Tj = 125 °C - 7 100 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA IGSS gate leakage current PSMN4R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 5 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 - 3.5 4.5 mΩ VGS = 7 V; ID = 25 A; Tj = 25 °C; Fig. 12 - 4.2 6.43 mΩ VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 - 5.4 6.8 mΩ VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 13 - 7.6 10 mΩ f = 1 MHz; Tj = 25 °C 0.57 1.13 2.3 Ω ID = 25 A; VDS = 40 V; VGS = 10 V; Fig. 14; Fig. 15 30 60 90 nC ID = 0 A; VDS = 0 V; VGS = 10 V - 31.6 - nC ID = 25 A; VDS = 40 V; VGS = 10 V; Fig. 14; Fig. 15 11.2 18.7 26 nC - 12 - nC RG gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gatesource charge QGS(th-pl) post-threshold gatesource charge - 6.7 - nC QGD gate-drain charge 3.2 10.7 25 nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 40 V; Fig. 14; Fig. 15 - 4.6 - V Ciss input capacitance 2575 4292 6009 pF Coss output capacitance VDS = 40 V; VGS = 0 V; f = 0.5 MHz; Tj = 25 °C; Fig. 16 686 1144 1830 pF Crss reverse transfer capacitance 5 47 141 pF td(on) turn-on delay time - 17 - ns tr rise time - 13 - ns td(off) turn-off delay time - 34 - ns tf fall time - 16 - ns VDS = 40 V; RL = 1.6 Ω; VGS = 10 V; RG(ext) = 5 Ω Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.81 1 V trr reverse recovery time - 33 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 40 V; Fig. 18 - 24.5 - nC PSMN4R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 6 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 aaa-033388 300 ID (A) 10 V 8V 240 6.5 V 180 6V aaa-033389 16 RDSon (mΩ) 7V 12 8 VGS = 5.5 V 120 5V 60 4 4.5 V 0 Fig. 8. 0 1 2 3 VDS (V) 0 4 0 4 8 12 16 VGS (V) 20 Tj = 25 °C Tj = 25 °C; ID = 25 A Output characteristics; drain current as a Fig. 9. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-033390 300 ID (A) aaa-011501 10-1 ID (A) 240 10-2 180 10-3 120 10-4 175°C 10-5 60 Tj = 25°C 0 0 1 2 3 4 5 6 7 VGS (V) 10-6 8 VDS = 8 V Product data sheet 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = 5 V Fig. 10. Transfer characteristics; drain current as a function of gate-source voltage; typical values PSMN4R5-80YSF 0 Fig. 11. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 7 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 aaa-033391 16 RDSon (mΩ) 4.5 V 5 V 5.5 V 6V a 6.5 V 12 aaa-033260 2.4 1.8 7V 8 1.2 8V 4 0.6 VGS = 10 V 0 0 60 120 180 240 ID (A) 0 -60 300 -30 0 30 60 90 120 150 Tj (°C) 180 Tj = 25 °C Fig. 12. Drain-source on-state resistance as a function of drain current; typical values VGS (V) Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature aaa-033393 10 VDS 8 ID 6 VGS(pl) 64 V 40 V 4 VDS = 16 V VGS(th) VGS 2 0 QGS2 QGS1 0 10 20 30 40 50 60 QG (nC) QGS 70 Tj = 25 °C; ID = 25 A Fig. 14. Gate-source voltage as a function of gate charge; typical values PSMN4R5-80YSF Product data sheet QGD QG(tot) 003aaa508 Fig. 15. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 8 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 aaa-033394 104 C (pF) aaa-033395 300 IS (A) Ciss 240 Coss 103 180 120 102 Crss 10 10-1 1 10 VDS (V) 60 0 102 VGS = 0 V; f = 0.5 MHz 175°C 0 0.2 0.4 0.6 Tj = 25°C 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source-drain (diode forward) current as a as a function of drain-source voltage; typical function of source-drain (diode forward) values voltage; typical values 003aal160 ID (A) trr ta tb 0 0.25 IRM IRM t (s) Fig. 18. Reverse recovery timing definition PSMN4R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 9 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) mm A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 19. Package outline LFPAK56; Power-SO8 (SOT669) PSMN4R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 10 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 12. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 20. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PSMN4R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 11 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 Wave soldering footprint information for LFPAK56 package SOT669 4.826 1.78 1.72 2.1 1.4 0.6 (x4) 1.27 0.635 solder lands Dimensions in mm Issue date 15-04-13 15-04-16 sot669_fw Fig. 21. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669) PSMN4R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 12 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 13. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 13 / 14 PSMN4R5-80YSF Nexperia NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Package outline........................................................ 10 12. Soldering................................................................... 11 13. Legal information......................................................13 © Nexperia B.V. 2023. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 13 March 2023 PSMN4R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2023 © Nexperia B.V. 2023. All rights reserved 14 / 14