BUK9M20-60ELX

BUK9M20-60EL Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology 7 April 2022 Product data sheet 1. General description Single, logic level, N-channel MOSFET in LFPAK33 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag applications. 2. Features and benefits • • • Fully automotive qualified to AEC-Q101 at 175 °C Enhanced SOA technology for improved linear mode performance LFPAK copper clip package technology: • High robustness and current handling capability • Gull wing leads for easy AOI inspection and exceptional board level reliability 3. Applications • • 12 V automotive systems Airbag squib voltage regulator MOSFET 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 60 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 40 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 79.4 W VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 13 7.3 10.4 13 mΩ ID = 15 A; VDS = 48 V; VGS = 4.5 V; Tj = 25 °C; Fig. 15; Fig. 16 - 9 18 nC [1] Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD [1] gate-drain charge 40 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D Mounting base; connected to drain Graphic symbol D G 1 2 3 mbb076 4 S LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package BUK9M20-60EL Name Description Version LFPAK33 Plastic, single ended surface mounted package (LFPAK33); 8 leads; 0.65 mm pitch SOT1210 7. Marking Table 4. Marking codes Type number Marking code BUK9M20-60EL 9206EL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).Tj = 25 °C unless otherwise stated. Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 60 V VGS gate-source voltage DC; Tj ≤ 175 °C -10 10 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 79.4 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 40 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 37 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3; Fig. 4 - 208 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C [1] Source-drain diode IS source current Tmb = 25 °C - 40 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 208 A - 74 mJ Avalanche ruggedness EDS(AL)S BUK9M20-60EL Product data sheet non-repetitive drainID = 37 A; Vsup ≤ 60 V; RGS = 50 Ω; source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 51 µs; Fig. 5 All information provided in this document is subject to legal disclaimers. 7 April 2022 [2] [3] © Nexperia B.V. 2022. All rights reserved 2 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Symbol Parameter IAS non-repetitive avalanche Vsup ≤ 60 V; VGS = 10 V; Tj(init) = 25 °C; current RGS = 50 Ω; Fig. 5 [1] [2] [3] [4] Conditions [2] [3] [4] Min Max Unit - 37 A 40 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. Protected by 100% test. 03aa16 120 ID (A) Pder (%) aaa-034694 60 50 80 40 (1) 30 40 20 10 0 Fig. 1. 0 50 100 150 Tmb (°C) 0 200 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V (1) 40 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Normalized total power dissipation as a function of mounting base temperature Fig. 2. ID (A) 0 Continuous drain current as a function of mounting base temperature aaa-034696 103 Limit RDSon = VDS / ID 102 tp = 10 µs 100 µs 10 DC 1 ms 1 10-1 10 ms 100 ms 1 10 VDS (V) 102 Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9M20-60EL Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2022 © Nexperia B.V. 2022. All rights reserved 3 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology ID (A) aaa-034704 103 Limit RDSon = VDS / ID 102 tp = 10 µs 10 100 µs DC 1 ms 1 10 ms 100 ms 10-1 10-1 1 10 VDS (V) 102 Tmb = 125 °C; IDM is a single pulse Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-034695 102 (1) 10 (2) 1 (3) 10-1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 5. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-mb) Conditions thermal resistance from Fig. 6 junction to mounting base BUK9M20-60EL Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2022 Min Typ Max Unit - 1.58 1.89 K/W © Nexperia B.V. 2022. All rights reserved 4 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology aaa-021351 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 0.02 P single shot δ= 10-2 Fig. 6. 10-5 10-4 10-3 10-2 T t tp 10-3 10-6 tp T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 66 - V ID = 250 µA; VGS = 0 V; Tj = -40 °C - 63 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 62 - V ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 11; Fig. 12 1.4 1.67 2.1 V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 12 - - 2.45 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 12 0.5 - - V VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.01 1 µA VDS = 60 V; VGS = 0 V; Tj = 175 °C - 34 500 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 13 7.3 10.4 13 mΩ VGS = 10 V; ID = 15 A; Tj = 105 °C; Fig. 14 11 16.4 21 mΩ VGS = 10 V; ID = 15 A; Tj = 125 °C; Fig. 14 12.2 18 23.4 mΩ VGS = 10 V; ID = 15 A; Tj = 175 °C; Fig. 14 15 22.7 30 mΩ VGS = 4.5 V; ID = 15 A; Tj = 25 °C; Fig. 13 10.5 15 20 mΩ VGS = 4.5 V; ID = 15 A; Tj = 105 °C; Fig. 14 15.6 23.5 32 mΩ VGS = 4.5 V; ID = 15 A; Tj = 125 °C; Fig. 14 17 26 35.3 mΩ VGS = 4.5 V; ID = 15 A; Tj = 175 °C; Fig. 14 20.7 32 44.4 mΩ Static characteristics V(BR)DSS VGS(th) drain-source breakdown voltage gate-source threshold voltage IDSS drain leakage current IGSS gate leakage current RDSon drain-source on-state resistance BUK9M20-60EL Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2022 © Nexperia B.V. 2022. All rights reserved 5 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Symbol Parameter Conditions Min Typ Max Unit RG gate resistance f = 1 MHz; Tj = 25 °C - 1.9 - Ω ID = 15 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 15; Fig. 16 - 40 56 nC ID = 15 A; VDS = 48 V; VGS = 4.5 V; Tj = 25 °C; Fig. 15; Fig. 16 - 20 28 nC - 5 8 nC - 9 18 nC - 2101 2941 pF - 200 240 pF - 115 158 pF - 11 - ns - 25 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 25 - ns tf fall time - 20 - ns gfs transfer conductance VDS = 8 V; ID = 15 A; Tj = 25 °C; Fig. 9 - 40 - S VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 17 VDS = 48 V; RL = 3.2 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 18 - 0.83 1 V trr reverse recovery time - 29 - ns Qr recovered charge IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V; Tj = 25 °C; Fig. 19 [1] - 33 - nC [1] includes capacitive recovery ID (A) aaa-034697 50 10 V 4.5 V 40 aaa-034698 50 RDSon (mΩ) 3.5 V 40 30 30 VGS = 3 V 20 20 2.8 V 10 10 2.6 V 2.4 V 0 Fig. 7. 0 1 2 3 VDS (V) 0 4 0 2 4 6 8 10 12 14 VGS (V) 16 Tj = 25 °C Tj = 25 °C; ID = 15 A Output characteristics; drain current as a Fig. 8. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values BUK9M20-60EL Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2022 © Nexperia B.V. 2022. All rights reserved 6 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology gfs (S) aaa-034782 50 ID (A) aaa-034699 30 25 40 20 25°C 15 175°C 30 20 10 10 0 5 0 5 10 15 20 25 ID (A) 0 30 Tj = 25 °C; VDS = 8 V Fig. 9. Tj = -55°C 0 1 2 3 4 VGS (V) 5 VDS = 8 V Forward transconductance as a function of drain current; typical values Fig. 10. Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah026 10-1 003aah025 3 VGS(th) (V) 2.5 ID (A) 10-2 max min 10-3 typ 2 max typ 1.5 10 -4 min 1 10-5 10-6 0.5 0 1 2 V GS (V) 0 -60 3 Fig. 11. Sub-threshold drain current as a function of gate-source voltage Product data sheet 60 120 Tj (° C) 180 ID = 1 mA ; VDS = VGS Tj = 25 °C; VDS = 5 V BUK9M20-60EL 0 Fig. 12. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. 7 April 2022 © Nexperia B.V. 2022. All rights reserved 7 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology aaa-034700 50 RDSon (mΩ) 2.6 V 2.8 V 3 V a 3.5 V aaa-034850 2.4 10 V 40 1.8 VGS = 4.5 V 30 1.2 20 4.5 V VGS = 10 V 10 0 0 10 20 30 40 ID (A) 0.6 0 -60 50 -30 0 30 60 90 120 150 Tj (°C) 180 Tj = 25 °C Fig. 13. Drain-source on-state resistance as a function of drain current; typical values VGS (V) Fig. 14. Normalized drain-source on-state resistance factor as a function of junction temperature aaa-034701 10 VDS 8 ID 6 VGS(pl) 48 V 4 VGS(th) VDS = 14 V VGS 2 0 QGS2 QGS1 0 10 20 30 40 QG (nC) QGS 50 Tj = 25 °C; ID = 15 A Fig. 15. Gate-source voltage as a function of gate charge; typical values BUK9M20-60EL Product data sheet QGD QG(tot) 003aaa508 Fig. 16. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. 7 April 2022 © Nexperia B.V. 2022. All rights reserved 8 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology aaa-034702 104 C (pF) IS (A) 60 Ciss 103 aaa-034703 80 40 Coss 102 Crss 20 175°C 10 10-1 1 10 VDS (V) 0 102 VGS = 0 V; f = 1 MHz -55°C Tj = 25°C 0 0.2 0.4 0.6 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 17. Input, output and reverse transfer capacitances Fig. 18. Source-drain (diode forward) current as a as a function of drain-source voltage; typical function of source-drain (diode forward) values voltage; typical values 003aal160 ID (A) trr ta tb 0 0.25 IRM IRM t (s) Fig. 19. Reverse recovery timing definition BUK9M20-60EL Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2022 © Nexperia B.V. 2022. All rights reserved 9 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology 11. Package outline Plastic single ended surface mounted package (LFPAK33); 8 leads E A e1 A c1 b1 L1 SOT1210 D2 mounting base D1 (D) H E1 L 1 4 b e w A A1 C X c Lp y C detail X 0 2.5 5 mm scale Dimensions Unit(1) A A1 b(1) max 0.90 0.10 0.35 nom min 0.80 0.00 0.25 mm b1(1) c c1 2.4 0.20 0.30 2.2 0.10 0.20 D ref 2.60 D1 2.35 1.90 D2 0.50 E(1) E1 3.40 2.45 3.20 2.00 e e1 0.65 0.65 H L L1 Lp 3.40 0.65 0.25 0.50 3.20 0.45 0.13 0.30 w 0.20 0.10 Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version sot1210_po References IEC JEDEC y JEITA European projection Issue date 14-04-25 16-08-09 SOT1210 Fig. 20. Package outline LFPAK33 (SOT1210) BUK9M20-60EL Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2022 © Nexperia B.V. 2022. All rights reserved 10 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 12. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or BUK9M20-60EL Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2022 © Nexperia B.V. 2022. All rights reserved 11 / 12 BUK9M20-60EL Nexperia Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Package outline........................................................ 10 12. Legal information......................................................11 © Nexperia B.V. 2022. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 7 April 2022 BUK9M20-60EL Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2022 © Nexperia B.V. 2022. All rights reserved 12 / 12