GAN7R0-150LBEZ

LG A GAN7R0-150LBE FC 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package 24 April 2023 Product data sheet 1. General description The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits • • • • • • • • • Enhancement mode - normally-off power switch Ultra high frequency switching capability No body diode Low gate charge, low output charge Qualified for standard applications ESD protection RoHS, Pb-free, REACH-compliant High efficiency and high power density Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm 3. Applications • • • • • • • • • High power density and high efficiency power conversion AC-to-DC converters, (secondary stage) High frequency DC-to-DC converters in 48 V systems 400 V to 48 V LLC converters, secondary (rectification) side Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers Datacom and telecom (AC-to-DC and DC-to-DC) converters Motor drives LiDAR (non-automotive) Class D audio amplifiers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage VTDS transient drain to source voltage pulsed; tp = 1 µs; δfactor = 0.01 ID drain current VGS = 5 V Ptot total power dissipation Fig. 1 Tj junction temperature [1] Min Typ Max Unit - - 150 V - - 170 V - - 28 A - - 28 W -40 - 150 °C Static characteristics RDSon drain-source on-state resistance VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 9; Fig. 10; Fig. 11; Fig. 12 - 5.6 7 mΩ RG gate resistance f = 5 MHz; Tj = 25 °C - 2.3 - Ω GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package Symbol Parameter Conditions Min Typ Max Unit - 1.3 - nC - 7.6 - nC - 47 - nC Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge ID = 10 A; VDS = 85 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 Qoss output charge VGS = 0 V; VDS = 85 V; Tj = 25 °C [1] [2] [2] Limited by package Qr is not specified separately from Qoss for e-mode GaN FETs, since Qr = Qoss + QD, and QD = 0. (QD is charge associated with diffusion of minority carriers. Since there is no body diode, no minority carriers in excess of Qoss have to be transferred for e-mode GaN FETs.) 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 1 D 2 3 G S aaa-036394 Transparent top view FCLGA3 (SOT8073-1) 6. Ordering information Table 3. Ordering information Type number Package GAN7R0-150LBE Name Description Version FCLGA3 flip chip land gid array package; no leads; body: 3.2 x 2.2 x SOT8073-1 0.774 mm, 3-pad 7. Marking Table 4. Marking codes Type number Marking code GAN7R0-150LBE 7R0ELBE 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).Tj = 25 °C unless otherwise stated. Symbol Parameter VDS drain-source voltage VTDS transient drain to source voltage VGS gate-source voltage GAN7R0-150LBE Product data sheet Conditions pulsed; tp = 1 µs; δfactor = 0.01 All information provided in this document is subject to legal disclaimers. 24 April 2023 Min Max Unit - 150 V - 170 V -4 6 V © Nexperia B.V. 2023. All rights reserved 2 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Fig. 1 - 28 W ID drain current VGS = 5 V [1] - 28 A IDM peak drain current pulsed; tp ≤ 10 µs; Fig. 2 [1] - 120 A Tstg storage temperature -40 150 °C Tj junction temperature -40 150 °C Tsld(M) peak soldering temperature - 260 °C [1] Limited by package 03ne36 120 Pder (%) 80 40 0 Fig. 1. 0 50 100 150 Tmb (° C) 200 Normalized total power dissipation as a function of mounting base temperature ID (A) aaa-036267 103 Limit RDSon = VDS / ID 102 tp =10 μS 10 100 μS DC 1 mS 1 10 mS 10-1 10-1 1 10 102 VDS (V) 103 Tmb = 25 °C; IDM is a single pulse Fig. 2. Safe operating area; continuous and peak drain currents as a function of drain-source voltage GAN7R0-150LBE Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 3 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-c) thermal resistance from junction to case - - 26 K/W Rth(j-mb) thermal resistance from Fig. 3 junction to mounting base - - 4.4 K/W Rth(j-a) thermal resistance from junction to ambient - - 57 K/W [1] [1] Rth(j-a) is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. aaa-036262 10 ZthJB (K/W) 1 10-1 10-2 0.5 0.2 0.1 0.05 0.02 0.01 Single shot 10-3 10-4 10-5 10-7 Fig. 3. 10-6 P δ= tp 10-5 10-4 10-3 10-2 tp T t T tP (S) 10-1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 150 µA; VGS = 0 V; Tj = 25 °C 150 - - V VGS(th) gate-source threshold voltage ID = 5 mA; VDS = VGS; Tj = 25 °C; Fig. 8 0.8 1.1 2.1 V IDSS drain leakage current VDS = 120 V; VGS = 0 V; Tj = 25 °C - 8 45 µA IGSS gate leakage current VGS = 5 V; Tj = 25 °C - 1 32 µA VGS = -4 V; Tj = 25 °C - 8 45 µA RDSon drain-source on-state resistance VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 9; Fig. 10; Fig. 11; Fig. 12 - 5.6 7 mΩ RG gate resistance f = 5 MHz; Tj = 25 °C - 2.3 - Ω ID = 10 A; VDS = 85 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 - 7.6 - nC - 1.7 - nC - 1.3 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge GAN7R0-150LBE Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 4 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance - 865 - pF Coss output capacitance VDS = 85 V; VGS = 0 V; f = 100 kHz; Tj = 25 °C; Fig. 15 - 280 - pF Crss reverse transfer capacitance - 2.5 - pF Co(er) effective output capacitance, energy related 0 V ≤ VDS ≤ 85 V; VGS = 0 V; Tj = 25 °C; Fig. 16 [1] - 380 - pF Co(tr) effective output capacitance, time related 0 V ≤ VDS ≤ 85 V; VGS = 0 V; Tj = 25 °C [2] - 555 - pF Qoss output charge VGS = 0 V; VDS = 85 V; Tj = 25 °C [3] - 47 - nC - 1.2 - V Source-drain characteristics VSD [1] [2] [3] source-drain voltage IS = 0.5 A; VGS = 0 V; Tj = 25 °C; Fig. 17; Fig. 18; Fig. 19; Fig. 20 CO(er) is the fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 85 V CO(tr) is the fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 85 V Qr is not specified separately from Qoss for e-mode GaN FETs, since Qr = Qoss + QD, and QD = 0. (QD is charge associated with diffusion of minority carriers. Since there is no body diode, no minority carriers in excess of Qoss have to be transferred for e-mode GaN FETs.) aaa-036249 120 ID (A) 100 VG=5V VG=4V 80 Fig. 4. VG=5V VG=4V 80 VG=3V 60 60 40 40 20 20 0 aaa-036250 120 ID (A) 100 VG=2V 0 1 2 3 4 VDS (V) 0 5 VG=3V VG=2V 0 1 2 3 4 VDS (V) 5 Tj = 25 °C Tj = 125 °C Output characteristics: drain current as a Fig. 5. function of drain-source voltage; typical values Output characteristics: drain current as a function of drain-source voltage; typical values GAN7R0-150LBE Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 5 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package aaa-036257 120 ID (A) 100 aaa-036264 80 QOSS (nC) 60 80 25° C 60 125° C 40 40 20 20 0 Fig. 6. 0 1 2 3 4 VGS (V) 0 5 Transfer characteristics; drain current as a function of gate-source voltage; typical values VGS(th) (V) 25 50 75 100 125 VDS (V) 150 Freq. = 100 kHz Fig. 7. aaa-036260 2 0 a Output charge as a function of drain-source voltage; typical values aaa-036261 2.5 2 1.5 1.5 1 1 0.5 0 0.5 0 25 50 75 100 125 TJ (° C) 0 -50 150 -25 0 25 50 75 100 125 TJ (° C) 150 ID = 5 mA ; VDS = VGS Fig. 8. Gate-source threshold voltage as a function of junction temperature GAN7R0-150LBE Product data sheet Fig. 9. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 6 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package aaa-036510 100 RDSon (mΩ) VGS = 2.0 V 3.0 V 80 aaa-036251 40 RDS(on) (mΩ) ID=5A ID=10A 30 ID=15A ID=20A 60 20 40 10 20 0 4.0 V 5.0 V 0 25 50 75 100 125 ID (A) 0 150 Tj = 25 °C 2 2.5 3 3.5 4 4.5 VGS (V) 5 T j = 25 °C Fig. 10. Drain-source on-state resistance as a function of drain current ; typical values Fig. 11. Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-036252 40 RDS(on) (mΩ) ID = 5A VDS ID = 10A ID ID = 15A 30 ID = 20A VGS(pl) 20 VGS(th) 10 VGS QGS2 0 QGS1 2 2.5 3 3.5 4 4.5 VGS (V) QGS 5 Tj = 125 °C Fig. 12. Drain-source on-state resistance as a function of gate-source voltage; typical values GAN7R0-150LBE Product data sheet QGD QG(tot) 003aaa508 Fig. 13. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 7 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package VGS (V) aaa-036266 5 aaa-036263 104 C (pF) 4 CISS 103 3 COSS 102 2 10 1 CRSS 0 0 1 2 3 4 5 6 7 QG (nC) TJ = 25 °C ; ID = 10 A Fig. 14. Gate-source voltage as a function of gate charge; typical values EOSS (µJ) 1 10-1 8 ID (A) 4 VGS = -4V VGS = -3V VGS = -2V VGS = -1V -5 -10 2 -15 1 -20 0 25 50 75 100 125 VDS (V) -25 150 Freq. = 100 kHz Product data sheet -8 -7 -6 VGS = 0V -5 -4 -3 -2 -1 VDS (V) 0 Tj = 25 °C Fig. 16. COSS stored energy as a function of drainsource voltage; typical values GAN7R0-150LBE 103 aaa-036253 0 3 0 102 VDS (V) 10 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values aaa-036265 5 1 Fig. 17. Source current as a function of source-drain voltage; typical values All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 8 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package ID (A) aaa-036254 0 -5 aaa-036255 0 ID (A) -5 VGS = -4V VGS = -3V VGS = 0V -10 -10 -15 -15 VGS = 1V VGS = 2V VGS = 3V VGS = 4V VGS = 5V VGS = -2V VGS = -1V -20 -20 VGS = 0V -25 -8 -7 -6 -5 -4 -3 -2 -1 VDS (V) -25 0 Tj = 125 °C -2 -1.5 -1 -0.5 VDS (V) 0 Tj = 25 °C Fig. 18. Source current as a function of source-drain voltage; typical values ID (A) Fig. 19. Source current as a function of source-drain voltage; typical values aaa-036256 0 -5 VGS = 5V VGS = 4V VGS = 3V VGS = 2V VGS = 1V -10 VGS = 0V -15 -20 -25 -3 -2.5 -2 -1.5 -1 -0.5 VDS (V) 0 Tj = 125 °C Fig. 20. Source current as a function of source-drain voltage; typical values GAN7R0-150LBE Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 9 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package 11. Package outline FCLGA3: flip chip land gid array package; no leads; body: 3.2 x 2.2 x 0.774 mm, 3-pad L3 C A B v L1 v 1 SOT8073-1 C A B L4 e1 L2 2 3 L5 e v C A B h (4×) L3 C A seating plane A1 D B A 3× y C u C E pin 1 index area 0 3 mm scale Dimensions (mm are the original dimensions) Unit(1) mm A A1 max 0.874 0.254 nom 0.774 0.224 min 0.674 0.194 D E 2.2 BSC 3.2 BSC e e1 1.195 1.695 BSC BSC h L1 L2 L3 L4 L5 0.69 2.99 0.90 0.35 2.24 0.64 2.94 0.85 0.30 2.19 0.59 2.89 0.80 0.25 2.14 0.13 REF u v y 0.1 0.05 0.1 sot8073-1_po Outline version SOT8073-1 References IEC JEDEC JEITA European projection Issue date MO-303 compatible 23-03-13 Fig. 21. Package outline FCLGA3 (SOT8073-1) GAN7R0-150LBE Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 10 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package 12. Soldering Footprint information for reflow soldering of FCLGA3 package SOT8073-1 3.5 2.95 1.32 0.95 0.375 2.3 0.41 2.2 0.31 0.2 0.95 (2×) 0.27 0.82 (3×) 0.85 (2×) 0.95 (2×) 0.62 (2×) 0.64 0.75 0.545 2.5 1.94 0.65 1.3 (2×) 0.775 1.55 2.95 3.05 recommended stencil thickness: 0.1 mm occupied area solder resist solder land solder paste Dimensions in mm Issue date 23-03-16 sot8073-1_fr Fig. 22. Reflow soldering footprint for FCLGA3 (SOT8073-1) GAN7R0-150LBE Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 11 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package 13. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 12 / 13 GAN7R0-150LBE Nexperia 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 4 11. Package outline........................................................ 10 12. Soldering................................................................... 11 13. Legal information......................................................12 © Nexperia B.V. 2023. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 24 April 2023 GAN7R0-150LBE Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2023 © Nexperia B.V. 2023. All rights reserved 13 / 13