PSMP061-60YEX

PSMP061-60YE 60 V, P-channel Trench MOSFET 13 January 2021 Product data sheet 1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • High thermal power dissipation capability Suitable for thermally demanding environments due to 175 °C rating Trench MOSFET technology 3. Applications • • • • Reverse battery protection Power management High-side load switch Motor drive 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = -10 V; Tmb = 25 °C - - -25 A Ptot total power dissipation Tmb = 25 °C - - 66 W VGS = -10 V; ID = -4.7 A; Tj = 25 °C - 48 61 mΩ Static characteristics RDSon drain-source on-state resistance PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G S 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 017aaa094 6. Ordering information Table 3. Ordering information Type number Package PSMP061-60YE Name Description Version LFPAK56; Power-SO8 plastic, single-ended surface-mounted package; 4 terminals SOT669 7. Marking Table 4. Marking codes Type number Marking code PSMP061-60YE 06160YE PSMP061-60YE Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 2 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -60 V VGS gate-source voltage -20 20 V ID drain current VGS = -10 V; Tmb = 25 °C - -25 A VGS = -10 V; Tmb = 100 °C - -17.7 A IDM peak drain current single pulse; tp ≤ 10 µs; Tmb = 25 °C - -90 A Ptot total power dissipation Tmb = 25 °C - 66 W Tj junction temperature -55 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C Source-drain diode IS source current Tmb = 25 °C - -25 A ISM peak source current single pulse; tp ≤ 10 µs; Tmb = 25 °C - -90 A - 800 V - 61 mJ ESD maximum rating VESD electrostatic discharge voltage HBM [1] Avalanche ruggedness EDS(AL)S [1] non-repetitive drainTj(init) = 25 °C; ID = -4.6 A; DUT in source avalanche energy avalanche (unclamped) Measured between all pins. aaa-030121 120 Pder (%) aaa-030122 120 Ider (%) 80 80 40 40 0 -75 Fig. 1. 25 125 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature PSMP061-60YE Product data sheet 0 -75 225 Fig. 2. 125 Tmb (°C) 225 Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 13 January 2021 25 © Nexperia B.V. 2021. All rights reserved 3 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET aaa-032670 -103 ID (A) Limit RDSon = VDS/ID -102 tp = 10 µs 100 µs 1 ms -10 -1 DC; Tmb = 25 °C 10 ms -10-1 -10-2 Fig. 3. 100 ms -1 -10 -102 VDS (V) Safe operating area; junction to mounting base; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-mb) [1] [2] Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to mounting base Min Typ Max Unit [1] - 99 109 K/W [2] - 47 52 K/W - 1.8 2.3 K/W Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-031395 10 Zth(j-mb) (K/W) duty cycle = 0.5 1 0.20 0.10 0.05 10-1 0.02 single shot 10-2 10-6 Fig. 4. 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMP061-60YE Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 4 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -60 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS=VGS; Tj = 25 °C -1.5 -2 -3 V IDSS drain leakage current VDS = -60 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -60 V; VGS = 0 V; Tj = 125 °C - - -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -10 V; ID = -4.7 A; Tj = 25 °C - 48 61 mΩ VGS = -10 V; ID = -4.7 A; Tj = 175 °C - 100 130 mΩ VGS = -4.5 V; ID = -3.8 A; Tj = 25 °C - 62 93 mΩ IGSS RDSon gate leakage current drain-source on-state resistance gfs forward transconductance VDS = -10 V; ID = -4 A; Tj = 25 °C - 65 - S RG gate resistance f = 1 MHz; Tj = 25 °C - 12 - Ω VDS = -30 V; ID = -4.7 A; VGS = -10 V; Tj = 25 °C - 20 30 nC - 3.3 - nC - 4.3 - nC - 1060 - pF - 85 - pF - 49 - pF - 12 - ns - 58 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 21 - ns tf fall time - 204 - ns VDS = -30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -30 V; ID = -4.7 A; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = -22.4 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V trr reverse recovery time - 30 - ns Qr recovered charge IS = -22.4 A; dIS/dt = 100 A/µs; VGS = -10 V; VDS = -30 V; Tj = 25 °C - 37 - nC PSMP061-60YE Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 5 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET aaa-030756 -50 ID (A) -40 VGS = -10 V aaa-030757 -10-3 ID (A) -4.5 V -10-4 -30 Min Typ -1.5 -2.0 Max -3.8 V -20 -10-5 -3.4 V -10 -3.2 V -3.0 V 0 Fig. 5. 0 -1 -2 -3 -2.8 V -4 VDS (V) -10-6 -5 0 -0.5 -1.0 -2.5 -3.0 -3.5 VGS (V) Tj = 25 °C VDS = -5 V; Tj = 25 °C Output characteristics: drain current as a Fig. 6. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-030758 300 -3.0 V -3.2 V RDSon (mΩ) -3.4 V 200 aaa-030759 300 RDSon (mΩ) -3.8 V 200 Tj = 175 °C 100 100 -4.5 V Tj = 25 °C VGS = -10 V 0 0 -10 -20 -30 -40 ID (A) 0 -50 Tj = 25 °C Fig. 7. Product data sheet -1 -2 -3 -4 VGS (V) -5 ID = -4.8 A Drain-source on-state resistance as a function of drain current; typical values PSMP061-60YE 0 Fig. 8. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 6 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET aaa-030760 -25 aaa-030761 2.5 ID (A) a -20 2.0 -15 1.5 -10 1.0 0 Tj = 25 °C Tj = 175 °C -5 0 -1 -2 -3 -4 0.5 VGS (V) 0 -60 -5 0 60 120 Tj (°C) 180 VDS = -10 V Fig. 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-030762 -3.5 VGS(th) (V) -3.0 Fig. 10. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-030763 104 Max C (pF) -2.5 103 Ciss 102 Coss Typ -2.0 Min -1.5 -1.0 Crss -0.5 0 -60 0 60 120 Tj (°C) 10 -10-1 180 ID = -250 μA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 11. Gate-source threshold voltage as a function of junction temperature PSMP061-60YE -1 Fig. 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 7 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET aaa-030764 -10 VGS (V) VDS -8 ID -6 VGS(pl) -4 VGS(th) VGS -2 0 QGS2 QGS1 0 5 10 15 QGS 20 25 QG (nC) QGD QG(tot) VDS = -30 V; ID = -4.8 A; Tamb = 25 °C 003aaa508 Fig. 14. Gate charge waveform definitions Fig. 13. Gate-source voltage as a function of gate charge; typical values aaa-030765 -20 IS (A) -15 -10 -5 Tj = 175 °C 0 0 -0.4 Tj = 25 °C -0.8 VSD (V) -1.2 VGS = 0 V Fig. 15. Source current as a function of source-drain voltage; typical values PSMP061-60YE Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 8 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 16. Duty cycle definition PSMP061-60YE Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 9 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669) PSMP061-60YE Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 10 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 18. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PSMP061-60YE Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 11 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET Wave soldering footprint information for LFPAK56 package SOT669 4.826 1.78 1.72 2.1 1.4 0.6 (x4) 1.27 0.635 solder lands Dimensions in mm Issue date 15-04-13 15-04-16 sot669_fw Fig. 19. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669) PSMP061-60YE Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 12 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PSMP061-60YE v.1 Product data sheet - - PSMP061-60YE Product data sheet 20210113 All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 13 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET 15. 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Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 14 / 15 PSMP061-60YE Nexperia 60 V, P-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information.......................................................... 9 12. Package outline........................................................ 10 13. Soldering................................................................... 11 14. Revision history........................................................13 15. Legal information......................................................14 © Nexperia B.V. 2021. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 13 January 2021 PSMP061-60YE Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2021 © Nexperia B.V. 2021. All rights reserved 15 / 15