PSMN038-100HSX

PSMN038-100HS N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. 2. Features and benefits • • • • • High peak drain current IDM Copper clip and flexible Leads High operating junction temperature Tj = 175 °C Superior reliability Low body diode reverse recovery charge Qr 3. Applications • • • • • Synchronous rectifier Forward and flyback converter Industrial drive Power management system Uninterruptible Power Supply (UPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 100 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 21.4 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 53 W Tj junction temperature -55 - 175 °C VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 30 37.6 mΩ VGS = 10 V; ID = 5 A; Tj = 175 °C; Fig. 11; Fig. 12 - 80 104 mΩ - 9.7 - nC - 25.9 - nC - - 46 mJ Static characteristics FET1 and FET2 RDSon drain-source on-state resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge QG(tot) total gate charge ID = 5 A; VDS = 80 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 Avalanche Ruggedness FET1 and FET2 EDS(AL)S non-repetitive drainsource avalanche energy ID = 21.4 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1] [2] PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Symbol Parameter Conditions Min Typ Max Unit IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Tj = 25 °C - 44 - nC Source-drain diode FET1 and FET2 Qr [1] [2] recovered charge Refer to application note AN10273 for further information Single-pulse avalanche rating limited by maximum junction temperature of 175 °C 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1 Simplified outline 8 7 6 Graphic symbol 5 D1 D1 1 2 3 4 S1 D2 D2 G1 S2 G2 mbk725 LFPAK56D; Dual LFPAK (SOT1205) 6. Ordering information Table 3. Ordering information Type number Package PSMN038-100HS Name Description Version LFPAK56D; Dual LFPAK plastic, single ended surface mounted package (LFPAK56D); 8 leads SOT1205 7. Marking Table 4. Marking codes Type number Marking code PSMN038-100HS 38RS10H 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 100 V VDGR drain-gate voltage RGS = 20 kΩ - 100 V VGS gate-source voltage DC; Tj ≤ 175 °C -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 53 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 21.4 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 15 A PSMN038-100HS Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 2 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Symbol Parameter Conditions Min Max Unit IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 84 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode FET1 and FET2 IS source current Tmb = 25 °C - 21.4 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 84 A - 46 mJ Avalanche Ruggedness FET1 and FET2 EDS(AL)S [1] [2] non-repetitive drainID = 21.4 A; Vsup ≤ 100 V; RGS = 50 Ω; source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1] [2] Refer to application note AN10273 for further information Single-pulse avalanche rating limited by maximum junction temperature of 175 °C 03aa16 120 ID (A) Pder (%) aaa-016742 25 20 80 15 10 40 5 0 0 50 100 150 Tmb (°C) 0 200 0 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V Fig. 2. Fig. 1. Normalized total power dissipation as a function of mounting base temperature PSMN038-100HS Product data sheet Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 3 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology ID (A) aaa-016746 103 Limit RDSon = VDS / ID 102 tp = 10 us 10 100 us DC 1 10-1 1 ms 10 ms 100 ms 1 102 10 VDS (V) 103 Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-016744 102 10 (1) (2) 1 (3) 10-1 10-2 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from Fig. 5 junction to mounting base - - 2.84 K/W Rth(j-a) thermal resistance from Minimum footprint; mounted on a junction to ambient printed circuit board - 95 - K/W PSMN038-100HS Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 4 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 003aaj500 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 P 0.02 10-1 single shot δ= tp 10-2 10-6 Fig. 5. 10-5 10-4 10-3 10-2 10-1 tp T t T 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration. 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; Fig. 10 2.4 3 4 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 10 1 - - V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 4.5 V VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 30 37.6 mΩ VGS = 10 V; ID = 5 A; Tj = 175 °C; Fig. 11; Fig. 12 - 80 104 mΩ - 25.9 - nC - 4.3 - nC - 9.7 - nC - 1150 1533 pF - 122 147 pF - 84 115 pF - 6.2 - ns Static characteristics FET1 and FET2 V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics FET1 and FET2 QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 11.2 - ns td(off) turn-off delay time - 20.3 - ns tf fall time - 13.9 - ns PSMN038-100HS Product data sheet ID = 5 A; VDS = 80 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15 VDS = 80 V; RL = 16 Ω; VGS = 10 V; RG(ext) = 5 Ω; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 5 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Symbol Parameter Conditions Min Typ Max Unit Source-drain diode FET1 and FET2 VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.78 1.2 V trr reverse recovery time 32.9 - ns recovered charge IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Tj = 25 °C - Qr - 44 - nC ID (A) aaa-016747 20 10 V VGS = 4.5 V 16 80 12 60 8 40 4V 4 0 Fig. 6. ID (A) 20 3.5 V 0 1 2 3 VDS (V) aaa-016753 100 RDSon (mΩ) 5V 0 4 0 4 8 12 16 VGS (V) 20 Tj = 25 °C; tp = 300 μs Tj = 25 °C; ID = 5 A Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-016773 60 003aah028 10-1 ID (A) 50 10-2 40 min 10-3 typ max 30 10-4 20 175°C Tj = 25°C 10 0 0 1 2 3 4 5 6 VGS (V) 10-5 10-6 7 VDS = 10 V Fig. 8. Product data sheet 2 4 VGS (V) 6 Tj = 25 °C; VDS = 5 V Transfer characteristics; drain current as a function of gate-source voltage; typical values PSMN038-100HS 0 Fig. 9. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 6 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 003aah027 5 VGS(th) (V) aaa-016774 160 RDSon (mΩ) 4V 4.5 V max 4 120 typ 3 80 2 min 5V 40 1 VGS = 10 V 0 -60 0 60 120 T j (°C) 0 180 0 4 8 12 16 ID (A) 20 Tj = 25 °C; tp = 300 μs ID = 1 mA; VDS = VGS Fig. 10. Gate-source threshold voltage as a function of junction temperature Fig. 11. Drain-source on-state resistance as a function of drain current; typical values 003aaj819 3 VDS a 2.4 ID 1.8 VGS(pl) 1.2 VGS(th) VGS 0.6 0 -60 QGS2 QGS1 0 60 120 Tj ( °C) QGS 180 QGD QG(tot) 003aaa508 Fig. 13. Gate charge waveform definitions Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature PSMN038-100HS Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 7 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology VGS (V) aaa-016775 10 8 aaa-016776 104 C (pF) VDS = 14 V Ciss 103 6 80 V 4 Coss 102 2 0 Crss 0 5 10 15 20 25 QG (nC) 10 10-1 30 Tj = 25 °C; ID = 5 A 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig. 14. Gate-source voltage as a function of gate charge; typical values IS (A) Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values aaa-016777 20 16 12 8 175°C 4 0 0 0.2 0.4 Tj = 25°C 0.6 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN038-100HS Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 8 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 11. Package outline Plastic single ended surface mounted package LFPAK56D; 8 leads E SOT1205 A A b1 c1 L1 mounting base D H D1 D2 L 1 2 3 e b (8x) 4 w X c A E1 E2 A1 C θ Lp detail X 0 2.5 mm 5 mm scale Dimensions Unit y C A max 1.05 nom min 1.02 D(1) D1(1) D2 (ref) E(1) E1(1) 4.4 0.25 0.30 4.70 4.55 3.5 5.30 1.8 0.85 4.1 0.19 0.24 4.45 4.35 3.4 4.95 1.6 0.60 A1 b b1 0.1 0.50 0.0 0.35 c c1 E2 e 1.27 H L L1 Lp 6.2 1.3 0.55 0.85 5.9 0.8 0.30 0.40 w y 0.25 0.1 Note 1. Plastic or metal protrusions of 0.2 mm maximum per side are not included. Outline version References IEC JEDEC JEITA θ 8° 0° sot1205_po European projection Issue date 14-08-21 14-10-28 SOT1205 Fig. 17. Package outline LFPAK56D; Dual LFPAK (SOT1205) PSMN038-100HS Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 9 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 12. Soldering Footprint information for reflow soldering of LFPAK56D package SOT1205 5.85 0.57 0.025 0.57 0.7 1.97 0.65 1.27 1.9 3.325 3.175 3.2 2.0 1.275 0.8 1.875 2.1 2.7 1.0 3.85 3.975 0.025 1.1 1.15 0.65 1.27 1.1 1.44 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm Issue date 0.7 14-07-28 20-04-20 sot1205_fr Fig. 18. Reflow soldering footprint for LFPAK56D; Dual LFPAK (SOT1205) PSMN038-100HS Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 10 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 13. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 11 / 12 PSMN038-100HS Nexperia N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Package outline.......................................................... 9 12. Soldering................................................................... 10 13. Legal information......................................................11 © Nexperia B.V. 2022. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 26 September 2022 PSMN038-100HS Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2022 © Nexperia B.V. 2022. All rights reserved 12 / 12