NXPSC086506Q

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors TO -22 0 AC NXPSC08650 Silicon Carbide Diode 4 May 2015 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits • • • • • • • • Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications • • • • • • • Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Tj Conditions δ = 0.5; Tmb ≤ 120 °C; square-wave Min Typ Max Unit - - 650 V - - 8 A - - 175 °C - 1.5 1.7 V pulse; Fig. 1; Fig. 2 junction temperature Static characteristics VF forward voltage IF = 8 A; Tj = 25 °C; Fig. 4 Scan or click this QR code to view the latest information for this product NXPSC08650 NXP Semiconductors Silicon Carbide Diode Symbol Parameter Conditions Min Typ Max Unit IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; - 13 - nC Dynamic characteristics Qr recovered charge Tj = 25 °C; Fig. 5 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode mb Graphic symbol K A 001aaa020 2 A anode mb mb mounting base; connected to cathode 1 2 TO-220AC (SOD59A) 6. Ordering information Table 3. Ordering information Type number NXPSC08650 Package Name Description Version TO-220AC Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59A 7. Marking Table 4. Marking codes Type number Marking code NXPSC08650 NXPSC08650 NXPSC08650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2/9 NXPSC08650 NXP Semiconductors Silicon Carbide Diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 650 V VRWM crest working reverse voltage - 650 V VR reverse voltage DC - 650 V IF(AV) average forward current δ = 0.5; Tmb ≤ 120 °C; square-wave - 8 A - 16 A - 48 A - 385 A pulse; Fig. 1; Fig. 2 IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 120 °C; square-wave pulse IFSM tp = 10 ms; Tj(init) = 25 °C; sine-wave non-repetitive peak forward current pulse tp = 10 µs; Tj(init) = 25 °C; square-wave pulse Tstg storage temperature -55 175 °C Tj junction temperature - 175 °C aaa-014277 30 δ=1 Ptot (W) 0.5 20 aaa-014280 10 IF(AV) (A) 120 °C 8 0.2 0.1 6 4 10 2 0 0 4 8 IF(AV) (A) IF(AV) = IF(RMS) × √δ Fig. 2. Vo = 1.250 V; Rs = 0.107 Ω Fig. 1. 0 -50 12 0 50 100 150 200 Tmb (°C) Forward current as a function of mounting base temperature; maximum values Forward power dissipation as a function of average forward current; square waveform; maximum values NXPSC08650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3/9 NXPSC08650 NXP Semiconductors Silicon Carbide Diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 3 - - 2.3 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W aaa-014281 10 Zth(j-mb) (K/W) 1 δ = 0.5 δ = 0.3 δ = 0.1 10-1 P δ= δ = 0.05 δ = 0.02 δ = 0.01 tp single pulse 10-2 10-6 Fig. 3. 10-5 10-4 10-3 10-2 10-1 1 tp T t T tp (s) 10 Transient thermal impedance from junction to mounting base as a function of pulse duration NXPSC08650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4/9 NXPSC08650 NXP Semiconductors Silicon Carbide Diode 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 8 A; Tj = 25 °C; Fig. 4 - 1.5 1.7 V IF = 8 A; Tj = 150 °C; Fig. 4 - 1.8 2.1 V VR = 650 V; Tj = 25 °C - - 230 µA VR = 650 V; Tj = 150 °C - - 700 µA IF = 8 A; dIF/dt = 500 A/µs; VR = 400 V; - 13 - nC f = 1 MHz; VR = 1 V; Tj = 25 °C - 260 - pF f = 1 MHz; VR = 300 V; Tj = 25 °C - 30 - pF f = 1 MHz; VR = 600 V; Tj = 25 °C - 24 - pF Static characteristics VF forward voltage IR reverse current Dynamic characteristics Qr recovered charge Tj = 25 °C; Fig. 5 Cd diode capacitance aaa-014283 16 IF (A) aaa-014284 16 Qr (nC) 12 12 (1) 8 8 (2) (3) (4) 4 0 0 1 2 4 3 VF (V) 0 4 Vo = 1.250 V; Rs = 0.107 Ω Fig. 5. (1) Tj = 25 °C; typical values (2) Tj = 100 °C; typical values 0 50 100 150 Tj (°C) 175 Forward current as a function of forward voltage; typical values (3) Tj = 150 °C; typical values (4) Tj = 175 °C; typical values Fig. 4. Forward current as a function of forward voltage; typical values NXPSC08650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5/9 NXPSC08650 NXP Semiconductors Silicon Carbide Diode 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC E SOD59A A E1 A1 P q D1 D V H Q b1 b L e C 0 5 Dimensions: (mm are the original dimensions) Unit mm max nom min A A1 b b1(1) c 10 mm scale D D1 E 4.7 1.40 0.95 1.70 0.65 15.8 6.8 10.30 4.3 1.15 0.70 1.17 0.45 15.6 6.4 9.65 e H 5.08 (REF) L P Q q E1 16.25 15.0 3.80 2.6 2.95 8.1 15.70 12.5 3.53 2.2 2.65 7.9 V 6.9 (REF) Note 1. Protruded dambar are included in the dimension. Outline version SOD59A Fig. 6. sod059a_po References IEC JEDEC JEITA European projection Issue date 15-03-24 15-03-30 TO-220AC (2-lead) Package outline TO-220AC (SOD59A) NXPSC08650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6/9 NXPSC08650 NXP Semiconductors Silicon Carbide Diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. NXPSC08650 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7/9 NXPSC08650 NXP Semiconductors Silicon Carbide Diode grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. NXPSC08650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8/9 NXPSC08650 NXP Semiconductors Silicon Carbide Diode 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ..................................................... 6 12 12.1 12.2 12.3 12.4 Legal information ...................................................7 Data sheet status ................................................. 7 Definitions .............................................................7 Disclaimers ...........................................................7 Trademarks .......................................................... 8 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 May 2015 NXPSC08650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9/9