BUK6Y19-30PX

BUK6Y19-30P 30 V, P-channel Trench MOSFET 17 April 2020 Product data sheet 1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse battery protection. 2. Features and benefits • • • • High thermal power dissipation capability Suitable for thermally demanding environments due to 175 °C rating Trench MOSFET technology AEC-Q101 qualified 3. Applications • • • • Reverse battery protection Power management High-side load switch Motor drive 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current Ptot total power dissipation Min Typ Max Unit - - -30 V -20 - 20 V VGS = -10 V; Tmb = 25 °C - - -45 A Tmb = 25 °C - - 66 W VGS = -10 V; ID = -9.5 A; Tj = 25 °C - 15 19 mΩ [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -20 V/+5 V according AEC-Q101 at Tj = 175 °C; VGS = -20 V/+20 V according AEC-Q101 at Tj = 150 °C BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G S 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 017aaa094 6. Ordering information Table 3. Ordering information Type number Package BUK6Y19-30P Name Description Version LFPAK56; Power-SO8 plastic, single-ended surface-mounted package; 4 terminals SOT669 7. Marking Table 4. Marking codes Type number Marking code BUK6Y19-30P 6Y1930P BUK6Y19-30P Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 2 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -30 V VGS gate-source voltage -20 20 V ID drain current VGS = -10 V; Tmb = 25 °C - -45 A VGS = -10 V; Tmb = 100 °C - -32 A [1] IDM peak drain current single pulse; tp ≤ 10 µs; Tmb = 25 °C - -181 A Ptot total power dissipation Tmb = 25 °C - 66 W Tj junction temperature -55 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C Source-drain diode IS source current Tmb = 25 °C - -45 A ISM peak source current single pulse; tp ≤ 10 µs; Tmb = 25 °C - -181 A - 500 V - 57 mJ ESD maximum rating VESD electrostatic discharge voltage HBM [2] Avalanche ruggedness EDS(AL)S [1] [2] non-repetitive drainTj(init) = 25 °C; ID = -4.6 A; DUT in source avalanche energy avalanche (unclamped) VGS = -20 V/+5 V according AEC-Q101 at Tj = 175 °C; VGS = -20 V/+20 V according AEC-Q101 at Tj = 150 °C Measured between all pins. aaa-030121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig. 1. aaa-030122 120 25 125 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature BUK6Y19-30P Product data sheet 0 -75 225 Fig. 2. 125 Tmb (°C) 225 Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 17 April 2020 25 © Nexperia B.V. 2020. All rights reserved 3 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET aaa-031394 -103 ID (A) Limit RDSon = VDS/ID tp = 10 µs tp = 100 µs -102 tp = 1 ms -10 tp = 10 ms DC; Tmb = 25 °C -1 -10-1 Fig. 3. tp = 100 ms -1 -10 -102 VDS (V) Safe operating area; junction to mounting base; continuous and peak drain currents as a function of drain-source voltage BUK6Y19-30P Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 4 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-mb) Conditions thermal resistance from junction to mounting base Min Typ Max Unit - 1.8 2.3 K/W aaa-031395 10 Zth(j-mb) (K/W) duty cycle = 1 0.75 1 0.50 0.25 0.33 0.20 0.10 10-1 10-5 Fig. 4. 0.05 10-4 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6Y19-30P Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 5 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -30 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS=VGS; Tj = 25 °C -1.5 -2 -3 V IDSS drain leakage current VDS = -30 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -30 V; VGS = 0 V; Tj = 125 °C - - -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -10 V; ID = -9.5 A; Tj = 25 °C - 15 19 mΩ VGS = -10 V; ID = -9.5 A; Tj = 175 °C - 26 32 mΩ VGS = -4.5 V; ID = -5.9 A; Tj = 25 °C - 25 50 mΩ IGSS RDSon gate leakage current drain-source on-state resistance gfs forward transconductance VDS = -10 V; ID = -4 A; Tj = 25 °C - 14 - S RG gate resistance f = 1 MHz - 11 - Ω VDS = -15 V; ID = -9.5 A; VGS = -10 V; Tj = 25 °C - 23 35 nC - 4 - nC - 5 - nC - 1260 - pF - 270 - pF - 150 - pF - 15 - ns - 83 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 19 - ns tf fall time - 237 - ns VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -15 V; ID = -9.5 A; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = -45.3 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V trr reverse recovery time - 31 - ns Qr recovered charge IS = -45.3 A; dIS/dt = 100 A/µs; VGS = -10 V; VDS = -15 V; Tj = 25 °C - 20 - nC BUK6Y19-30P Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 6 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET aaa-031396 -15 aaa-031397 -10-3 -3.8 V ID (A) ID (A) -4.5 V -3.4 V -10 V -10 -10-4 min typ max -3.2 V -10-5 -5 -3.0 V VGS = -2.8 V 0 Fig. 5. 0 -1 -2 -3 -10-6 -4 VDS (V) 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 VGS (V) Tj = 25 °C VDS = -5 V; Tj = 25 °C Output characteristics: drain current as a Fig. 6. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-031398 200 -3.2 V RDSon aaa-031399 150 -3.4 V RDSon (mΩ) 150 100 100 50 -3.8 V Tj = 175 °C 50 25 Tj = 25 °C -4.5 V 0 VGS = -10 V 0 -6 -12 ID (A) 0 -18 Tj = 25 °C Fig. 7. Product data sheet -1 -2 -3 -4 VGS (V) -5 ID = -4.8 A Drain-source on-state resistance as a function of drain current; typical values BUK6Y19-30P 0 Fig. 8. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 7 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET aaa-031400 -16 aaa-031401 2.0 ID A a -12 1.5 -8 1.0 Tj = 175 °C -4 0 0.5 Tj = 25 °C 0 -1 -2 -3 0 -60 -4 VGS (V) 0 60 120 Tj (°C) 180 VDS = -5 V Fig. 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 10. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-031402 -3.5 VGS(th) (V) -3.0 aaa-031403 104 C (pF) -2.5 max -2.0 Ciss 103 -1.5 typ -1.0 min Coss -0.5 0 -60 0 60 120 Tj (°C) 102 -10-1 180 ID = -250 μA; VDS = VGS Product data sheet -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 11. Gate-source threshold voltage as a function of junction temperature BUK6Y19-30P Crss Fig. 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 8 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET aaa-031404 -10 VDS VGS (V) ID -8 VGS(pl) -6 VGS(th) VGS -4 QGS1 -2 0 QGS2 0 5 10 15 QGS QGD QG(tot) 003aaa508 Fig. 14. Gate charge waveform definitions 20 25 QG (nC) VDS = -15 V; ID = -4 A; Tj = 25 °C Fig. 13. Gate-source voltage as a function of gate charge; typical values aaa-031405 -4 IS (A) -3 Tj = 175 °C -2 -1 Tj = 25 °C 0 0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V Fig. 15. Source current as a function of source-drain voltage; typical values BUK6Y19-30P Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 9 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 16. Duty cycle definition Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BUK6Y19-30P Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 10 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669) BUK6Y19-30P Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 11 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BUK6Y19-30P v.1 Product data sheet - - BUK6Y19-30P Product data sheet 20200417 All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 12 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 14. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or BUK6Y19-30P Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 13 / 14 BUK6Y19-30P Nexperia 30 V, P-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information........................................................ 10 12. Package outline........................................................ 11 13. Revision history........................................................12 14. Legal information......................................................13 © Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 17 April 2020 BUK6Y19-30P Product data sheet All information provided in this document is subject to legal disclaimers. 17 April 2020 © Nexperia B.V. 2020. All rights reserved 14 / 14