PMN100EPAX

PMN100EPA 60 V, P-channel Trench MOSFET 16 April 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Logic-level compatible Extended temperature range Tj = 175 °C Very fast switching Trench MOSFET technology AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -60 V VGS gate-source voltage -20 - 20 V ID drain current - - -2.5 A - 100 130 mΩ VGS = -10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -10 V; ID = -2.5 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . PMN100EPA Nexperia 60 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G SC-74; TSOP6 (SOT457) S 017aaa094 6. Ordering information Table 3. Ordering information Type number Package Name PMN100EPA Description Version SC-74; TSOP6 plastic, surface-mounted package (SC-74; TSOP6); 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN100EPA 3R PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 2 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -60 V VGS gate-source voltage -20 20 V ID drain current VGS = -10 V; Tamb = 25 °C [1] - -2.5 A VGS = -10 V; Tamb = 100 °C [1] - -1.6 A - -10 A [2] - 660 mW [1] - 1.7 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - 7.5 W Tj junction temperature Tsp = 25 °C -55 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1.7 A HBM [3] - 400 V - 33 mJ ESD maximum rating VESD electrostatic discharge voltage Avalanche ruggedness EDS(AL)S [1] [2] [3] non-repetitive drainTj(init) = 25 °C; ID = -1 A; DUT in avalanche source avalanche energy (unclamped) 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Measured between all pins. aaa-030119 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig. 1. aaa-030120 120 25 125 Tamb (°C) Normalized total power dissipation as a function of ambient temperature PMN100EPA Product data sheet 0 -75 225 Fig. 2. 125 Tamb (°C) 225 Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. 16 April 2020 25 © Nexperia B.V. 2020. All rights reserved 3 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET aaa-031174 -102 ID (A) -10 tp = Limit RDSon = VDS / ID -1 -10-1 1 ms DC; Tsp = 25 °C -10-2 10 ms DC; Tamb = 25 °C; 6 cm2 -10-3 100 ms -10-4 -10-5 -10-1 Fig. 3. -1 -10 -102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 4 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) [1] [2] Conditions thermal resistance from junction to solder point Min Typ Max Unit [1] - 195 225 K/W [2] - 78 90 K/W - 15 20 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-029606 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.20 0.50 0.25 0.10 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 aaa-029607 duty cycle = 1 0.75 0.50 Zth(j-a) (K/W) 0.33 0.20 0.25 0.10 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 5 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -60 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -1.9 -2.5 -3.2 V IDSS drain leakage current VDS = -60 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA RDSon drain-source on-state resistance VGS = -10 V; ID = -2.5 A; Tj = 25 °C - 100 130 mΩ VGS = -10 V; ID = -2.5 A; Tj = 175 °C - 217 276 mΩ VGS = -4.5 V; ID = -2.1 A; Tj = 25 °C - 130 180 mΩ gfs forward transconductance VDS = -10 V; ID = -2.1 A; Tj = 25 °C - 6 - S RG gate resistance f = 1 MHz - 11 - Ω VDS = -30 V; ID = -2.1 A; VGS = -10 V; Tj = 25 °C - 11 17 nC - 1.9 - nC - 2.4 - nC - 616 - pF - 41 - pF - 26 - pF - 7 - ns - 7 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 29 - ns tf fall time - 25 - ns VDS = -30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -30 V; ID = -2.1 A; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = -1.7 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V trr reverse recovery time - 18 - ns Qr recovered charge IS = -1.4 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = -30 V; Tj = 25 °C - 13 - nC PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 6 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET aaa-031106 -9 -10 V ID (A) aaa-031107 -10-3 -4.5 V ID (A) -6 min -10-4 -3.6 V typ max -10-5 -3 VGS = -3 V 0 Fig. 6. 0 -1 -2 -3 VDS (V) -10-6 -4 -2 -3 VGS (V) -4 Tj = 25 °C Tj = 25 °C; VDS = -5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Subthreshold drain current as a function of gate-source voltage aaa-031108 500 RDSon 400 400 300 300 VGS = -4.2 V 200 0 -6 V 0 -3 -6 -10 V ID (A) 0 -9 0 -4 -8 -12 -16 -20 VGS (V) ID = -2.1 A Drain-source on-state resistance as a function of drain current; typical values Product data sheet Tj = 25 °C 100 Tj = 25 °C PMN100EPA Tj = 175 °C 200 -4.5 V 100 aaa-031109 500 -3.8 V -3.5 V RDSon Fig. 8. -1 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 7 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET aaa-031110 -12 aaa-031111 3 ID (A) a -8 2 Tj = 175 °C -4 1 Tj = 25 °C 0 0 -2 -4 VGS (V) 0 -60 -6 0 60 120 Tj (°C) 180 VDS = -5 V Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-031112 -4 aaa-031113 103 Ciss VGS(th) (V) max -3 C (pF) typ -2 102 min Coss -1 0 -60 Crss 0 60 120 Tj (°C) 10 -10-1 180 ID = -250 μA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMN100EPA -1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 8 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET aaa-031114 -10 VDS VGS (V) ID -8 VGS(pl) -6 VGS(th) VGS -4 QGS1 -2 0 QGS2 0 4 8 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions 12 VDS = -30 V; ID = -2.1 A; Tj = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-031115 -6 IS (A) -4 Tj = 175 °C -2 Tj = 25 °C 0 0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 9 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 10 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET 12. Package outline Plastic, surface-mounted package (SC-74; TSOP6); 6 leads D SOT457 B E y A X HE 6 5 v M A 4 Q A pin 1 index A1 c 1 2 Lp 3 bp e detail X w M B 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.40 0.26 3.1 1.7 0.013 0.25 0.10 2.7 1.3 e 0.95 HE Lp Q 3.0 0.6 0.33 2.5 0.2 0.23 v w y 0.2 0.2 0.1 sot457_po Outline version References IEC JEDEC SOT457 JEITA European projection Issue date 06-03-16 18-11-27 SC-74 Fig. 18. Package outline SC-74; TSOP6 (SOT457) PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 11 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET 13. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig. 19. Reflow soldering footprint for SC-74; TSOP6 (SOT457) 5.3 1.5 (4×) 1.475 0.45 (2×) 5.05 1.475 solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig. 20. Wave soldering footprint for SC-74; TSOP6 (SOT457) PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 12 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMN100EPA v.1 Product data sheet - - PMN100EPA Product data sheet 20200416 All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 13 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 14 / 15 PMN100EPA Nexperia 60 V, P-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information........................................................ 10 12. Package outline........................................................ 11 13. Soldering................................................................... 12 14. Revision history........................................................13 15. Legal information......................................................14 © Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 16 April 2020 PMN100EPA Product data sheet All information provided in this document is subject to legal disclaimers. 16 April 2020 © Nexperia B.V. 2020. All rights reserved 15 / 15