SRM201TJ2K00TKZTR2K5

Special Request SRM201T – Surge Resistant MELF Resistor Specifications per ● IEC 600115-1 ● AEC-Q200 Rev.D Features ● AEC-Q200 Compliant ● Anti-sulfuration test qualified ● Excellent in heat dissipation than chip resistor ● Stronger mechanical structure to endure vibration and thermal shock ● MELF packaging yet capable of high power handling ● Special conductive film enhances anti-surge capability ● Absorbs harmful surge which damages precious devices or components ● SMD-enabled alternative to carbon composition resistors ● RoHS and REACH compliant ◼ DIMENSION Type Body Length (L , mm) Cap Diameter (D1 , mm) Body Diameter (D2, mm) Soldering spot (B, mm) Net Weight Per 1,000 pcs SRM201T 8.50 ± 0.50 3.00 ± 0.2 D1+0.05/ -0.35 1.3 Min. 186 grams ◼ GENERAL SPECIFICATIONS Type Power Rating (at 70℃) SRM201T 2W Maximum Maximum Available Permissible Minimum Maximum Resistance Working Resistance Surge Resistance Resistance Tolerance Voltage* Value Voltage* √𝑃𝑥𝑅 9,000V 0.1Ω 10MΩ ±1%~ ±5% E-24/ E-96 * Rated Continuous Working Voltage (RCWV) should be determined from RCWV = √ Power Rating × Resistance Values Feb. 01, 2023 Page 1 ◼ PART NUMBER Example：SRM201TJ1K00TKZTR2K5 SRM201T J 1K00 Type Tolerance TKZ TR2K5 TCR Packaging 3-character code TKZ = Default Product Temperature Coefficient. 5-character code TR = Tape Reel Resistance 1KΩ F (5%) 4-character code containing 3 significant digits 1 letter multiplier (pieces per reel) 2K5 = 2,500pcs MULTIPLIER R=1 K = 103 M = 106 G = 109 Information of typical product temperature coefficient can be found in the Technical Summary section of the datasheet. ◼ POWER DERATING CURVE 100% 90% 80% 70% 60% RATED 50% LOAD 40% 30% 20% 10% 0% 30 40 50 60 70 80 90 100 110 AMBIENT TEMPERATURE 120 130 140 150 160 (oC) ◼ TECHNICAL SUMMARY Characteristics Ranges & Limits Dielectric Withstanding Voltage, VAC or DC 500 Temperature Coefficient, PPM /℃* ±200, ±400, ±800, ±1200 Operating Temperature Range,℃ Insulation Resistance, MΩ Tin Whisker (JESD201 Temperature Cycling & High Temp. /Humidity Storage), μm -55 ~ +150 >104 Failure Rate in Time, pcs / 109 device hours