DTQ3306

DTQ3306 www.din-tek.jp N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.0073 at VGS = 10 V 45 0.0102 at VGS = 4.5 V 40 VDS (V) 30 • DT-Trench Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) APPLICATIONS 53 nC • Notebook PC Core • VRM/POL DFN 3x3 EP D Bottom View Top View Top View 1 8 2 7 3 6 4 5 G Pin 1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C 37e ID 21b, c IDM IAS 22 EAS 49.2 mJ 45a, e A IS 21b, c 28.5 TC = 70 °C 19.95 PD W 3.15b, c TA = 70 °C 2.2b, c TJ, Tstg Operating Junction and Storage Temperature Range A 17.8b, c 135 TC = 25 °C TA = 25 °C V 45a, e TA = 70 °C Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case Symbol Typical Maximum t  10 s RthJA 31 50 Steady State RthJC 3 6 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 80 A. 1 DTQ3306 www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 35 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 5.5 0.5 45 µA A VGS = 10 V, ID = 12 A 0.0073 0.0081 VGS = 4.5 V, ID = 9 A 0.0102 0.012 VDS = 15 V, ID = 12 A 100  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1920 VDS = 12.5 V, VGS = 0 V, f = 1 MHz 541 VDS = 15 V, VGS = 10 V, ID = 12 A tr 75 66.5 VDS = 15 V, VGS = 4.5 V, ID = 9 A f = 1 MHz 1.5 VDD = 15 V, RL = 0.555 Ω ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω  11 70 10 td(on) 55 tr 2.5 18 tf td(off) nC 36 30 td(on) td(off) pF 1003 VDD = 15 V, RL = 0.625 Ω ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω tf ns 180 55 12 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 45 TC = 25 °C 135 IS = 12 A IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 51 82 ns 70.2 105 nC 26 23 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTQ3306 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 30 VGS = 10 thru 3 V 24 ID - Drain Current (A) ID - Drain Current (A) 75 60 45 30 18 12 TC = 125 °C 6 15 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 V GS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics 4 Transfer Characteristics 0.020 RDS(on) - Drain-to-Source On-Resistance (Ω) 600 TC = 25 °C 500 G fs - Transconductance (S) - 55 °C TC = 25 °C VGS = 2 V TC = 125 °C 400 300 TC = - 55 °C 200 100 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 0 0 0 10 20 30 40 50 60 70 80 0 90 15 30 45 60 75 90 75 90 ID - Drain Current (A) ID - Drain Current (A) Transconductance RDS(on) vs. Drain Current 10 3000 ID = 12 A C - Capacitance (pF) 2000 V G S - Gate-to-Source Voltage (V) Ciss 1500 Coss 1000 500 Crss 8 VDS = 15 V 6 VDS = 24 V 4 2 0 0 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance 30 0 15 30 45 60 Qg - Total Gate Charge (nC) Gate Charge 3 DTQ3306 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 9.8 A 1.2 10 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.3 1.1 1.0 0.9 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.8 - 50 0.001 - 25 0 25 50 75 100 125 150 0 175 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 1 Forward Diode Voltage vs. Temperature 2.1 0.010 1.8 0.009 TA = 125 °C ID = 250 µA VGS(th) (V) RDS(on) - On-Resistance (Ω) ID = 12 A 0.008 TA = 25 °C 1.5 1.2 0.007 0.9 0.006 0 2 4 6 8 10 0.6 - 50 - 25 0 50 75 100 TJ - Temperature (°C) RDS(on) vs. VGS vs. Temperature Threshold Voltage 1000 I D - Drain Current (A) 100 100 µs 10 1 ms 10 ms Limited by rDS(on)* 1 100 ms 1s 10 s DC 0.1 0.01 TA = 25 °C Single Pulse 0.001 0.1 *VGS BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 25 VGS - Gate-to-Source Voltage (V) 125 150 175 DTQ3306 www.din-tek.jp 250 30 200 25 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 150 100 Package Limited 50 25 20 15 10 5 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 175 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 . 0.2 0.1 0.1 0.01 10- 4 0.05 0.02 Single Pulse 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 Package Information www.din-tek.jp 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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