PMZ290UNYL

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia SO T8 83 PMZ290UN 20 V, single N-channel Trench MOSFET 6 November 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless and ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.48 mm height 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 1 A - 290 350 mΩ VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 200 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 1 2 S source 2 3 D drain Graphic symbol D 3 Transparent top view DFN1006-3 (SOT883) G S 017aaa253 6. Ordering information Table 3. Ordering information Type number PMZ290UN Package Name Description Version DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ290UN ZG PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 2 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 1 A VGS = 4.5 V; Tamb = 100 °C [1] - 0.6 A - 4 A [2] - 360 mW [1] - 715 mW - 2700 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.67 A Source-drain diode IS source current Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 001aao121 120 Pder (%) 001aao122 120 Ider (%) 80 80 40 40 0 -75 Fig. 1. [1] -25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMZ290UN Product data sheet 0 -75 175 Fig. 2. -25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 6 November 2013 25 © NXP N.V. 2013. All rights reserved 3 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET aaa-001944 10 ID (A) limit RDSon = VDS / ID 1 (1) (2) (3) 10-1 (4) (5) 10-2 10-1 1 10 VDS (V) 102 IDM is single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms 2 (5) DC; Tamb = 25 °C; drain mounting pad 1 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 4 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 305 360 K/W [2] - 150 175 K/W - - 40 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 017aaa109 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa110 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.33 0.2 0.1 0 10 10- 3 0.05 0.02 0.01 10- 2 10- 1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 5 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 100 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 0.1 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 0.1 µA VGS = 4.5 V; ID = 200 mA; Tj = 25 °C - 290 350 mΩ VGS = 4.5 V; ID = 200 mA; Tj = 150 °C - 460 560 mΩ VGS = 2.5 V; ID = 100 mA; Tj = 25 °C - 360 450 mΩ VGS = 1.8 V; ID = 75 mA; Tj = 25 °C - 460 650 mΩ VDS = 5 V; ID = 200 mA; Tj = 25 °C - 2 - S total gate charge VDS = 10 V; ID = 1 A; VGS = 4.5 V; - 0.89 1.2 nC QGS gate-source charge Tj = 25 °C - 0.13 - nC QGD gate-drain charge - 0.18 - nC Ciss input capacitance VDS = 20 V; f = 1 MHz; VGS = 0 V; - 45 68 pF Coss output capacitance Tj = 25 °C - 11 - pF Crss reverse transfer capacitance - 7 - pF td(on) turn-on delay time VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; - 4.5 9 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 10 - ns td(off) turn-off delay time - 18.5 37 ns tf fall time - 5 - ns - 0.75 1.2 V IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMZ290UN Product data sheet IS = 300 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 6 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET aaa-001945 2.0 (1) ID (A) 03am43 10- 3 (2) ID (A) (3) 1.5 10- 4 (4) min typ max 1.0 0.5 0 10- 5 (5) 0 1 2 3 VDS (V) 10- 6 4 Tj = 25 °C Fig. 7. (1) VGS = 4.5 V 0 0.4 0.8 VGS (V) 1.2 Sub-threshold drain current as a function of gate-source voltage (2) VGS = 2.5 V (3) VGS = 2.0 V (4) VGS = 1.8 V (5) VGS = 1.5 V Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values aaa-001946 1.0 aaa-001947 1.0 RDSon (Ω) RDSon (Ω) 0.8 0.8 (1) 0.6 0.6 (2) (3) 0.4 (1) 0.4 (2) (4) (5) 0.2 0 0 0.5 1.0 0.2 1.5 ID (A) 0 2.0 1 Tj = 25 °C ID = 800 mA (1) VGS = 1.8 V (1) Tj = 150 °C (2) VGS = 2 V (2) Tj = 25 °C (3) VGS = 2.5 V Fig. 9. (4) VGS = 3 V (5) VGS = 4.5 V Fig. 8. 0 2 3 4 VGS (V) 5 Drain-source on-state resistance as a function of gate-source voltage; typical values Drain-source on-state resistance as a function of drain current; typical values PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 7 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET aaa-001948 2.0 ID (A) 003aac024 2.0 a (1) (2) 1.5 1.5 1.0 1.0 0.5 0.5 (2) 0 0 (1) 1 2 VGS (V) 0 - 60 3 VDS > ID x RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aj65 1.2 03an06 102 VGS(th) (V) 0.9 max typ 0.6 Ciss C (pF) Coss 10 Crss min 0.3 0 - 60 0 60 120 Tj (°C) 1 10- 1 180 ID = 0.25 mA; VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature PMZ290UN Product data sheet 1 10 VDS (V) 102 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 8 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 03an07 5 VDS ID = 1 A Tj = 25 °C VDS = 10 V VGS (V) 4 ID VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0 0.2 0.4 0.6 Fig. 15. Gate charge waveform definitions 0.8 1 QG (nC) Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-001949 1.0 IS (A) 0.8 (1) 0.6 (2) 0.4 0.2 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16. Source current as a function of source-drain voltage; typical values PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 9 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 10 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 12. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION REFERENCES IEC JEDEC SOT883 JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Fig. 18. Package outline DFN1006-3 (SOT883) PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 11 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 13. Soldering 1.3 0.7 R0.05 (12×) solder lands 0.9 0.6 solder resist 0.7 solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883) 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMZ290UN v.1 20131106 Product data sheet - - PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 12 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 14 / 15 PMZ290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 6 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 November 2013 PMZ290UN Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 15 / 15