DP8810

Datasheet of DP8810（TSSOP-8） Shenzhen Developer Microelectronics Co.,Ltd. Address:Unit 7-10,7/F.,west block, Skyworth Semiconductor design Building,The 4th on High-tech Zone, Nanshan District, Shenzhen DP8810 Dual N-Channel Enhancement Power MOSFET General Description DP8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. It is ESD protected. This device is suitable for use as a Battery protection or in other Switching application. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) ESD Rating: 2000V HBM 20 V 6.0A < 20mΩ < 25mΩ Package Marking and Ordering Information Part # Marking Package DP8810 DP8810 TSSOP-8 Packing Reel Size Tape Width Qty N/A N/A 5000pcs Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous @ TJ=25℃ ID 6 A Pulsedb IDM 30 A Maximum Power Dissipationa Operating Junction and Temperature Range PD 1.5 W TJ,TSTG -55 To 150 ℃ Parameter Symbol Limit Unit Thermal Resistance,Junction-to-Ambient a RθJA 100 ℃/W Storage Thermal Characteristic 2019/11/07 DP8810_ REV 3.3_EN www.depuw.com １ DP8810 Dual N-Channel Enhancement Power MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Condition Min Typc Max Uni t Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=16V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V - - ±10 μA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.55 0.7 1 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=6A - 14 20 mΩ VGS=2.5V, ID=5A - 17 25 mΩ VDS=5V,ID=6A - 20 - S - 650 - pF - 140 - pF - 60 - pF - 0.5 - nS - 1 - nS - 12 - nS - 4 - nS - 8 - nC - 2.5 - nC - 3 - nC Parameter Off Characteristics On Characteristics Forward Transconductance gFS Dynamic Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, F=1.0MHz Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time td(on) VDD=10V, ID=1A VGS=5V, RGEN=3Ω , RL=1.5Ω tr td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V, ID=6A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage Drain-Sourse Diode Forward Currenta VSD VGS=0V,IS=1.7A - - 1.2 V IS VGS=0V - - 2.0 A Notes: a. Surface Mounted on FR4 Board ,T