MwT-PH32F
12 GHz High Power AlGaAs/InGaAs pHEMT
Features:
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30.5 dBm of Power at 12 GHz
13 dB Small Signal Gain at 12 GHz
43% PAE at 12 GHz
0.25 x 1600 Micron Refractory Metal/Gold
Gate
Excellent for High Power, Gain, and High
Power Added Efficiency
Ideal for Commercial, Military, Hi-Rel Space
Applications
Chip Dimensions: 530 x 375 microns
Chip Thickness: 100 microns
Description:
The MwT-PH32F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25
micron gate length and 1600 micron gate width make it ideally suited for applications requiring high power and high power
added efficiency up to 12.0 GHz frequency range. The device is equally effective for either wideband or narrow-band
applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability.
Electrical Specifications:
DC Specifications:
Updated October 2021
at Ta= 25 ° C
at Ta= 25 ° C
MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©
Please visit MwT website for information on MwT MMIC products.
Page 1 of 4
MwT-PH32F
12 GHz High Power AlGaAs/InGaAs pHEMT
Updated October 2021
MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©
Please visit MwT website for information on MwT MMIC products.
Page 2 of 4
MwT-PH32F
12 GHz High Power AlGaAs/InGaAs pHEMT
Absolute Maximum Rating
Notes:
1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal.
2. Exceeding any one of these limits may cause permanent damage.
Updated October 2021
MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©
Please visit MwT website for information on MwT MMIC products.
Page 3 of 4
MwT-PH32F
12 GHz High Power AlGaAs/InGaAs pHEMT
S-Parameters
ORDERING INFORMATION:
When placing order or inquiring, please specify wafer number, if known. For details of Safe Handling Procedure please see supplementary information
in available PDF on our website www.mwtinc.com. For package information, please see supplementary application note in PDF format by clicking
located on our website.
Available Packaging:
70 Package - MwT-PH32F70
71 Package - MwT-PH32F71
73 Package - MwT-PH32F73
Updated October 2021
MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©
Please visit MwT website for information on MwT MMIC products.
Page 4 of 4
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