IRLML2502

IRLML2502 MOSFET (N-CHANNEL) FEATURES  Fast switching  Ultra Low On-Resistance  Surface Mount device SOT-23 MECHANICAL DATA  Case: SOT-23  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current (Note 1) Power dissipation Thermal resistance from Junction to ambient Junction temperature Storage temperature Symbol VDS VGS ID IDM PD RθJA TJ Value 20 ±12 4.2 33 1.25 100 150 Unit V V A A W °C/W °C TSTG -55 ~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Conditions V(BR)DSS 20 V VGS=0V, ID=250μA Drain-Source breakdown voltage V I 1 DSS uA DS=16V, VGS=0V Zero gate voltage drain current IGSS ±100 nA VDS=0V, VGS=±12V Gate-body leakage current 1.2 V Gate-threshold voltage (note 1) VDS=VGS, ID=250μA VGS(th) 0.6 35 45 mΩ VGS=4.5V, ID=4.2A RDS(ON) Drain-source on-resistance (note 1) 50 80 mΩ VGS=2.5V, ID=3.6A gFS S VDS=10V, ID=4.0A Forward transconductance (note 1) 2.8 VSD IS=1.3A, VGS=0V,Tj=25°C 1.2 V Diode forward voltage (note 1) IS 1.3 A Diode forward current C 740 pF iss Input capacitance Coss 90 pF VDS=15V, VGS=0V, f=1MHz Output capacitance Crss 66 pF Reverse transfer capacitance t 7.5 nS d(on) Turn-on delay time tr 10 nS VDD=10V,ID=1A, Turn-on rise time td(off) 54 nS RGEN=6Ω,RL=10Ω Turn-off delay time t 26 nS Turn-off fall time f Qg 8 12 nC Total gate charge Qgs 1.8 2.7 nC VDS=10V,VGS=5V,ID=4A Gate-source charge Qgd 1.7 2.6 nC Gate-drain charge Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% . © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/6 IRLML2502 MOSFET (N-CHANNEL) Typical Characteristics 100 100 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 2.25V 10 20µs PULSE WIDTH TJ= 25 °C 1 0.1 1 10 2.25V 10 1 0.1 100 VDS , Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150° C V DS= 15V 20µs PULSE WIDTH 2.8 3.2 3.6 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics © SHENZHEN HOTTECH ELECTRONICS CO.,LTD 10 100 Fig 2. Typical Output Characteristics 100 2.4 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 2.0 20µs PULSE WIDTH TJ= 150 °C 4.0 ID = 4.0A 1.5 1.0 0.5 0.0 VGS = 4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature E-mail:hkt@heketai.com 2/6 IRLML2502 MOSFET (N-CHANNEL) 1200 800 VGS , Gate-to-Source Voltage (V) 1000 C, Capacitance (pF) 10 f = 1MHz VGS = 0V, Ciss = C gs + C gd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 600 400 200 0 Coss Crss 1 10 VDS , Drain-to-Source Voltage (V) VDS = 10V 8 6 4 2 0 100 0 4 8 12 QG, Total Gate Charge (nC) 16 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 ID , Drain Current (A) ISD , Reverse Drain Current (A) ID = 4.0A (A ) TJ = 150 ° C 100 10us 10 Current Drain , 1 I 1 TJ = 25 ° C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage © SHENZHEN HOTTECH ELECTRONICS CO.,LTD 100us 1.4 1ms 10ms TA = 25° C TJ = 150°C Single Pulse 0.1 0.1 1 10 VDS , Drain-to-Source Voltage (V) 100 Fig 8. Maximum Safe Operating Area E-mail:hkt@heketai.com 3/6 IRLML2502 MOSFET (N-CHANNEL) ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( °C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJA ) 1000 100 D =0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 t1, Rectangular Pulse Duration (sec) 1 10 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/6 IRLML2502 MOSFET (N-CHANNEL) SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 REF 0.079 0.022 REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23 Suggested Pad Layout Note: 1. Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 5/6 IRLML2502 MOSFET (N-CHANNEL) SOT-23 Tape and Reel SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Trailer SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 6/6