SIT8209AIG21-25E-200.000000 数据手册
SiT8209
Ultra-Performance Oscillator
Features
Applications
Any frequency between 80.000001 and 220 MHz accurate to
6 decimal places
100% pin-to-pin drop-in replacement to quartz-based oscillators
Ultra-low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra-short lead time
SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI
Express, video, Wireless
Computing, storage, networking, telecom, industrial control
[1]
Table 1. Electrical Characteristics
Parameter
Output Frequency Range
Frequency Stability
Operating Temperature Range
Supply Voltage
Current Consumption
Symbol
Min.
Typ.
Max.
Unit
f
80.000001
–
220
MHz
F_stab
T_use
Vdd
Idd
Condition
-10
–
+10
PPM
-20
–
+20
PPM
-25
–
+25
PPM
-50
–
+50
PPM
-20
–
+70
°C
Extended Commercial
-40
–
+85
°C
Industrial
Supply voltages between 2.5V and 3.3V can be supported.
Contact SiTime for guaranteed performance specs for supply
voltages not specified in this table.
Inclusive of Initial tolerance at 25 °C, and variations over
operating temperature, rated power supply voltage and load
1.71
1.8
1.89
V
2.25
2.5
2.75
V
2.52
2.8
3.08
V
2.97
3.3
3.63
V
–
34
36
mA
No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V
–
30
33
mA
No load condition, f = 100 MHz, Vdd = 1.8V
–
–
31
mA
Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
OE Disable Current
I_OD
–
–
30
mA
Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Standby Current
I_std
–
–
70
µA
Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly
Pulled Down
–
–
10
µA
Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down
DC
45
–
55
%
f 165 MHz, all Vdds.
Duty Cycle
Rise/Fall Time
Tr, Tf
–
1.2
2
ns
Output Voltage High
VOH
90%
–
–
Vdd
Output Voltage Low
VOL
–
–
10%
Vdd
Input Voltage High
VIH
70%
–
–
Vdd
Pin 1, OE or ST
Input Voltage Low
VIL
–
–
30%
Vdd
Pin 1, OE or ST
Input Pull-up Impedance
Z_in
–
100
250
kΩ
Pin 1, OE logic high or logic low, or ST logic high
2
–
–
MΩ
Pin 1, ST logic low
–
7
10
ms
Measured from the time Vdd reaches its rated minimum value
Startup Time
OE Enable/Disable Time
Resume Time
RMS Period Jitter
RMS Phase Jitter (random)
First year Aging
10-year Aging
T_start
15 pF load, 10% - 90% Vdd
IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
T_oe
–
–
115
ns
f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
T_resume
–
–
10
ms
In standby mode, measured from the time ST pin
crosses 50% threshold. Refer to Figure 5.
f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V
T_jitt
–
1.5
2
ps
–
2
3
ps
f = 156.25 MHz, Vdd = 1.8V
T_phj
–
0.5
1
ps
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz
F_aging
-1.5
–
+1.5
PPM
25°C
-5
–
+5
PPM
25°C
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Rev 1.1
January 2, 2017
www.sitime.com
SiT8209 Ultra-Performance Oscillator
Table 2. Pin Configuration
Pin
1
Symbol
Top View
Functionality
[2]
Output
Enable
H or Open : specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H or Open : specified frequency output
L: output is low (weak pull down). Device goes to sleep mode.
Supply current reduces to I_std.
OE/ST
1
4
VDD
GND
2
3
OUT
[2]
OE/ ST
[3]
2
GND
Power
Electrical ground
3
OUT
Output
Oscillator output
4
VDD
Power
Power supply voltage
[3]
Figure 1. Pin Assignments
Notes:
2. A pull-up resistor of