SIT9005AC-13-XXSP27.000000

SiT9005 1 to 141 MHz EMI Reduction Oscillator Features ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ Applications Spread spectrum for EMI reduction ▪ Wide spread % option  Center spread: from ±0.125% to ±2%, ±0.125% step size  Down spread: -0.25% to -4% with -0.25% step size ▪ Spread profile option: Triangular, Hershey-kiss Programmable rise/fall time for EMI reduction: 8 options, 0.25 to 40 ns Any frequency between 1 MHz and 141 MHz accurate to 6 decimal places 100% pin-to-pin drop-in replacement to quartz-based XO’s Excellent total frequency stability as low as ±20 ppm Operating temperature from -40°C to 85°C Low power consumption of 4.0 mA typical at 1.8 V Pin1 modes: Standby, output enable, or spread disable Fast startup time of 5 ms LVCMOS output Industry-standard packages ▪ QFN: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5 mm2 ▪ Contact SiTime for SOT23-5 (2.9 x 2.8 mm2) RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free Surveillance camera IP camera Industrial motors Flat panels Multi function printers PCI express ◼ ◼ ◼ ◼ ◼ ◼ Electrical Specifications Table 1. Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and 3.3 V supply voltage. Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 – 141 MHz Frequency Stability and Aging Frequency Stability F_stab -20 – +20 ppm -25 – +25 ppm – +50 ppm -50 Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage. Spread = Off. Operating Temperature Range Operating Temperature Range T_use -20 – +70 °C Extended Commercial -40 – +85 °C Industrial Supply Voltage and Current Consumption Supply Voltage Current Consumption Vdd Idd OE Disable Current I_OD Standby Current I_std Rev 1.01 1.62 1.8 1.98 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 – 3.63 V – 5.6 6.5 mA No load condition, f = 40 MHz, Vdd = 2.5 V to 3.3 V – 5.0 5.5 mA No load condition, f = 40 MHz, Vdd = 1.8 V – 5.0 6.5 mA f = 40 MHz, Vdd = 2.5 V to 3.3 V, OE = GND, Output in high-Z state – 4.6 5.2 mA f = 40 MHz, Vdd = 1.8 V, OE = GND, Output in high-Z state – 2.1 4.3 A ST = GND, Vdd = 2.5 V to 3.3 V, Output is weakly pulled down – 0.4 1.5 A ST = GND, Vdd = 1.8 V, Output is weakly pulled down 11 March 2021 www.sitime.com SiT9005 1 to 141 MHz EMI Reduction Oscillator Table 1. Electrical Characteristics (continued) Parameters Symbol Min. Typ. Max. Unit Condition LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 – 55 % Tr, Tf – 1 2 ns Vdd = 2.5 V, 2.8 V, 3.0 V or 3.3 V, 20% - 80%, default derive strength – 1.3 2.5 ns Vdd =1.8 V, 20% - 80%, default derive strength – – 2 ns Vdd = 2.25 V - 3.63 V, 20% - 80%, default derive strength Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0 V or 3.3 V) IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V) IOH = -2 mA (Vdd = 1.8 V) Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0 V or 3.3 V) IOL = 3 mA (Vdd = 2.8 V and Vdd = 2.5 V) IOL = 2 mA (Vdd = 1.8 V) Input High Voltage VIH 70% – – Vdd Pin 1, OE or ST ̅ ̅̅ Input Low Voltage VIL – – 30% Vdd Pin 1, OE or ST ̅ ̅̅ Input Pull-up Impedance Z_in 50 87 150 k Pin 1, OE logic high or logic low, or ST ̅ ̅ ̅ logic high 2 – – M Pin 1, ST ̅ ̅ ̅ logic low Input Characteristics Startup and Resume Timing T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value T_oe – – 180 ns f = 40 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold Spread Enable Time T_sde – – 4 µs Measured from the time SD pin crosses 50% threshold Spread Disable Time T_sdde – – 50 µs Measured from the time SD pin crosses 50% threshold Startup Time Enable/Disable Time Resume Time Jitter Cycle-to-cycle jitter T_ccj – 10.5 15 ps f = 40 MHz, Vdd = 2.5 to 3.3V, Spread = ON( or OFF) – 8.5 12 ps f = 40 MHz, Vdd = 3.3V, Spread = ON( or OFF) – 12.5 22 ps f = 40 MHz, Vdd = 1.8V, Spread = ON( or OFF) Table 2. Spread Spectrum % [1,2] Table 3. Spread Profile Ordering Code Center Spread (%) Down Spread (%) Spread Profile A ±0.125 -0.25 Hershey-kiss B ±0.250 -0.50 C ±0.390 -0.78 D ±0.515 -1.04 E ±0.640 -1.29 F ±0.765 -1.55 G ±0.905 -1.84 H ±1.030 -2.10 I ±1.155 -2.36 J ±1.280 -2.62 K ±1.420 -2.91 L ±1.545 -3.18 M ±1.670 -3.45 N ±1.795 -3.71 O ±1.935 -4.01 P ±2.060 -4.28 Triangular Notes: 1. In both center spread and down spread modes, modulation rate is employed with a frequency of ~31.25 kHz. 2. Contact SiTime for wider spread options Rev 1.01 Page 2 of 10 www.sitime.com SiT9005 1 to 141 MHz EMI Reduction Oscillator Table 4. Pin Description Pin 1 Symbol OE / ST / NC / SD Top View Functionality Output Enable H[3]: specified frequency output L: output is high impedance. Only output driver is disabled. Standby H[3]: specified frequency output L: output is low (week pull down). Device goes to sleep mode. Supply current reduced to I_std. No Connect Pin1 has no function (Any voltage between 0 and Vdd or Open) Spread Disable H: Spread = ON L: Spread = OFF 2 GND Power Electrical ground 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[4] OE/ ST ̅ ̅̅ / NC/SD 1 4 VDD GND 2 3 OUT Figure 1. Pin Assignments Notes: 3. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 4. A capacitor of value 0.1 µF or higher between Vdd and GND is required. Table 5. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 °C Vdd -0.5 4 V Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Junction Temperature[5] – 150 °C Note: 5. Exceeding this temperature for extended period of time may damage the device. Table 6. Maximum Operating Junction Temperature[6] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 70°C 80°C 85°C 95°C Note: 6. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 7. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev 1.01 Page 3 of 10 www.sitime.com SiT9005 1 to 141 MHz EMI Reduction Oscillator Timing Diagrams 90% Vdd Vdd Vdd 50% Vdd T_start Pin 4 Voltage [7] No Glitch during start up T_resume ST Voltage CLK Output HZ CLK Output HZ T_resume: Time to resume from ST T_start: Time to start from power-off Figure 2. Startup Timing Figure 3. Standby Resume Timing (ST Mode Only) Vdd Vdd 50% Vdd OE Voltage 50% Vdd T_oe OE Voltage T_oe CLK Output CLK Output HZ HZ T_oe: Time to put the output in High Z mode T_oe: Time to re-enable the clock output Figure 4. OE Enable Timing (OE Mode Only) Figure 5. OE Disable Timing (OE Mode Only) Vdd 50% Vdd SD Voltage Vdd 50% Vdd T_sde Frequency Deviation (%) T_sdde Modulation period = 32µs (31.25kHz) Frequency Deviation (%) SD Voltage Time (s) Time (s) Figure 6. SD Enable Timing (SD Mode Only) Figure 7. SD Diable Timing (SD Mode Only) Note: 7. SiT9005 has “no runt” pulses and “no glitch” output during startup or resume. Rev 1.01 Page 4 of 10 www.sitime.com SiT9005 1 to 141 MHz EMI Reduction Oscillator Programmable Drive Strength High Output Load Capability The SiT9005 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT9005 device with default drive strength setting, the typical rise/fall time is 1.1 ns for 15 pF output load. The typical rise/fall time slows down to 2.9 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.9 ns by then increasing the drive strength setting on the SiT9005. ◼ ◼ ◼ Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section. The SiT9005 can support up to 60 pF or higher in maximum capacitive loads with up to 3 additional drive strength settings. Refer to Table 8 through Table 12 to determine the proper drive strength for the desired combination of output load vs. rise/fall time EMI Reduction by Slowing Rise/Fall Time SiT9005 Drive Strength Selection Figure 8 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. Table 8 through Table 12 define the rise/fall time for a given capacitive load and supply voltage. Select the table that matches the SiT9005 nominal supply voltage (1.8 V, 2.5 V, 2.8 V, 3.3 V). Select the capacitive load column that matches the application requirement (15 pF to 60 pF) Under the capacitive load column, select the desired rise/fall times. The left-most column represents the part number code for the corresponding drive strength. Add the drive strength code to the part number for ordering purposes. trise=0.05 trise=0.1 trise=0.15 trise=0.2 trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 10 Harmonic amplitude (dB) 0 -10 -20 Calculating Maximum Frequency Based on the rise and fall time data given in Table 8 through Table 12, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: -30 -40 -50 -60 -70 -80 Max Frequency = 1 3 5 7 9 11 1 5 x Trf_20/80 Harmonic number Figure 8. Harmonic EMI reduction as a Function of Slower Rise/Fall Time where Trf_20/80 is the typical rise/fall time at 20% to 80% Vdd Jitter Reduction with Faster Rise/Fall Time Example 1 Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to increase rise/fall time (edge rate) of the input clock. Some chipsets would require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The SiT9005 provides up to 3 additional high drive strength settings for very fast rise/fall time. Refer to Table 8 through Table 12 to determine the proper drive strength. Calculate fMAX for the following condition: ◼ Vdd = 3.3 V (Table 12) ◼ Capacitive Load: 30 pF ◼ Desired Tr/f time = 1.6 ns (rise/fall time part number code = Z) Part number for the above example: SiT9005AIZ14-33EB-105.12345 Drive strength code is inserted here. Default setting is “-” Rev 1.01 Page 5 of 10 www.sitime.com SiT9005 1 to 141 MHz EMI Reduction Oscillator Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 8. Vdd = 1.8 V Rise/Fall Times for Specific CLOAD Table 9. Vdd = 2.5 V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 6.16 11.61 22.00 31.27 39.91 L 4.13 8.25 12.82 21.45 27.79 2.11 4.27 7.64 11.20 14.49 A 3.19 6.35 11.00 16.01 21.52 A R 2.11 4.31 7.65 10.77 14.47 R 1.45 2.81 5.16 7.65 9.88 B 1.65 3.23 5.79 8.18 11.08 B 1.09 2.20 3.88 5.86 7.57 T 0.93 1.91 3.32 4.66 6.48 T 0.62 1.28 2.27 3.51 4.45 E 0.78 1.66 2.94 4.09 5.74 E or "‐": default 0.54 1.00 2.01 3.10 4.01 U 0.70 1.48 2.64 3.68 5.09 U 0.43 0.96 1.81 2.79 3.65 F or "‐": default 0.65 1.30 2.40 3.35 4.56 F 0.34 0.88 1.64 2.54 3.32 Table 10. Vdd = 2.8 V Rise/Fall Times for Specific CLOAD Table 11. Vdd = 3.0 V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 3.77 7.54 12.28 19.57 25.27 L 3.60 7.21 11.97 18.74 24.30 A 1.94 3.90 7.03 10.24 13.34 A 1.84 3.71 6.72 9.86 12.68 R 1.29 2.57 4.72 7.01 9.06 R 1.22 2.46 4.54 6.76 8.62 B 0.97 2.00 3.54 5.43 6.93 B 0.89 1.92 3.39 5.20 6.64 T 0.55 1.12 2.08 3.22 4.08 T or "‐": default 0.51 1.00 1.97 3.07 3.90 E or "‐": default 0.44 1.00 1.83 2.82 3.67 E 0.38 0.92 1.72 2.71 3.51 U 0.34 0.88 1.64 2.52 3.30 U 0.30 0.83 1.55 2.40 3.13 F 0.29 0.81 1.48 2.29 2.99 F 0.27 0.76 1.39 2.16 2.85 Table 12. Vdd = 3.3 V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 3.39 6.88 11.63 17.56 23.59 A R B 1.74 1.16 0.81 3.50 2.33 1.82 6.38 4.29 3.22 8.98 6.04 4.52 12.19 8.34 6.33 T or "‐": default 0.46 1.00 1.86 2.60 3.84 E U 0.33 0.28 0.87 0.79 1.64 1.46 2.30 2.05 3.35 2.93 F 0.25 0.72 1.31 1.83 2.61 Rev 1.01 Page 6 of 10 www.sitime.com SiT9005 1 to 141 MHz EMI Reduction Oscillator Dimensions and Patterns Package Size – Dimensions (Unit: mm)[8] Recommended Land Pattern (Unit: mm)[9] 2.0 x 1.6 x 0.75 mm 0.8 1.2 1.5 0.9 2.5 x 2.0 x 0.75 mm 1.0 1.5 1.9 1.1 Rev 1.01 Page 7 of 10 www.sitime.com SiT9005 1 to 141 MHz EMI Reduction Oscillator Dimensions and Patterns (continued) Package Size – Dimensions (Unit: mm)[8] Recommended Land Pattern (Unit: mm)[9] 3.2 x 2.5 x 0.75 mm 1.2 1.9 2.2 1.4 Notes: 8. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. 9. A capacitor of value 0.1 µF or higher between Vdd and GND is required. Rev 1.01 Page 8 of 10 www.sitime.com SiT9005 1 to 141 MHz EMI Reduction Oscillator Ordering Information The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator. SiT9005AI -71-18EA2 5 .000625D Part Family “SiT9005” Packing Method “D”: 8 mm Tape & Reel, 3ku reel “E”: 8 mm Tape & Reel, 1ku reel Blank for Bulk Revision Letter “A” is the revision Frequency Temperature Range 1.000000 to 141.000000 MHz “C” Commercial -20ºC to 70ºC “I” Industrial -40ºC to 85ºC Spread Percentage Center: ”A” for ±0.125, “B” for ±0.250, “C” for ±0.390, “D” for ±0.515, “E” for ±0.640, “F” for ±0.765, “G” for ±0.905, “H” for ±1.030, “I” for ±1.155, “J” for ±1.280, “K” for ±1.420, “L” for ±1.545, “M” for ±1.670, “N” for ±1.795, “O” for ±1.935, “P” for ±2.060, Output Drive Strength “–” Default (datasheet limits) See Tables 7 to 11 for rise/fall times “L” “A” “R” “B” “T” “E” “U” “F” Package Size [10] n1 2.0 x 1.6 mm 0 2.5 x 2.0 mm “7” “1” “2” 3.2 x 2.5 mm Frequency Stability “1” for ±20 ppm “2” for ±25 ppm “3” for ±50 ppm Down: -0.25 -0.50 -0.78 -1.04 -1.29 -1.55 -1.84 -2.10 -2.36 -2.62 -2.91 -3.18 -3.45 -3.71 -4.01 -4.28 Feature Pin “E” for Output Enable “S” for Standby “N” for No Connect “D” for Spread Disablel Spread Type and Profile “-” Center spread & Triangular (Default) “H” Center spread & Hershey Kiss “D” Down spread & Triangular “G” Down spread & Hershey Kiss Supply Voltage “18” for 1.8 V ±10% “25” for 2.5 V ±10% “28” for 2.8 V ±10% “30” for 3.0 V ±10% “33” for 3.3 V ±10% “XX” for 2.5 V -10% to 3.3 V +10% Note: 10. Contact SiTime for SOT23 (2.9 x 2.8 mm2) package. Rev 1.01 Page 9 of 10 www.sitime.com SiT9005 1 to 141 MHz EMI Reduction Oscillator Table 13. Revision History Revision Release Date Change Summary 1.0 25-Sep-2017 Final release 1.01 11-Mar-2021 Formatting layout issues, updated hyperlinks and changed rev table date format Updated Dimensions and Patterns drawings SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439 © SiTime Corporation 2017-2021. The information contained herein is subject to change at any time without notice. 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CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. Rev 1.01 Page 10 of 10 www.sitime.com