SIT8925BA-21-18E-133.330000

SiT8925B High Frequency, Automotive AEC-Q100 Oscillator Features ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ Applications AEC-Q100 with extended temperature range (-55°C to 125°C) Frequencies between 115.2 MHz and 137 MHz accurate to 6 decimal points 100% pin-to-pin drop-in replacement to quartz-based XO Excellent total frequency stability as low as ±20 ppm Industry best G-sensitivity of 0.1 PPB/G Low power consumption of 4.9 mA typical at 1.8 V Standby mode for longer battery life LVCMOS/LVTTL compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free ◼ ◼ ◼ Automotive, extreme temperature and other high-rel electronics Infotainment systems, collision detection devices, and in-vehicle networking Powertrain control Related products for automotive applications. For aerospace and defense applications SiTime recommends using only Endura™ SiT8945. Electrical Characteristics Table 1. Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage. Parameter Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 115.20 – F_stab -20 – +20 ppm -25 – +25 ppm -30 – +30 ppm -50 – +50 ppm -40 – +85 °C AEC-Q100 Grade 3 -40 – +105 °C AEC-Q100 Grade 2 -40 – +125 °C AEC-Q100 Grade 1 -55 – +125 °C Extended cold, AEC-Q100 Grade1 137 MHz Refer to Tables 13 to 15 for the exact list of supported frequencies Frequency Stability and Aging Frequency Stability Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load (15 pF ±10%). Operating Temperature Range Operating Temperature Range (ambient) T_use Supply Voltage and Current Consumption Supply Voltage Current Consumption Standby Current Vdd Idd I_std 1.62 1.8 1.98 V 2.25 – 3.63 V All voltages between 2.25 V and 3.63 V including 2.5 V, 2.8 V, 3.0 V and 3.3 V are supported. Contact SiTime for 1.5 V support – 6 8 mA No load condition, f = 125 MHz, Vdd = 2.25 V to 3.63 V – 4.9 6 mA No load condition, f = 125 MHz, Vdd = 1.62 V to 1.98 V – 2.6 – A Vdd = 2.8 V to 3.3 V, ST = Low, Output is weakly pulled down – 1.4 – A Vdd = 2.5 V, ST = Low, Output is weakly pulled down – 0.6 – A Vdd = 1.8 V, ST = Low, Output is weakly pulled down LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 – 55 % Tr, Tf – 1.5 3 ns Vdd = 2.25 V - 3.63 V, 20% - 80% – 1.2 2.5 ns Vdd = 1.8 V, 20% - 80% Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0 V or 3.3 V) IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V) IOH = -2 mA (Vdd = 1.8 V) Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0 V or 3.3 V) IOL = 3 mA (Vdd = 2.8 V and Vdd = 2.5 V) IOL = 2 mA (Vdd = 1.8 V) Rev 1.72 1 January 2023 www.sitime.com SiT8925B High Frequency, Automotive AEC-Q100 Oscillator Table 1. Electrical Characteristics (continued) Parameter Symbol Min. Typ. Max. Unit Condition Input High Voltage VIH 70% – – Vdd Pin 1, OE or ST Input Low Voltage VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in – 100 – k Pin 1, OE logic high or logic low, or ST logic high 2 – – MΩ Pin 1, ST logic low Input Characteristics Startup and Resume Timing Startup Time Enable/Disable Time Resume Time T_start – – 5.5 ms Measured from the time Vdd reaches its rated minimum value T_oe – – 130 ns f = 115.20 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold Jitter RMS Period Jitter Peak-to-peak Period Jitter RMS Phase Jitter (random) T_jitt T_pk T_phj – 1.6 2.5 ps f = 125 MHz, 2.25 V to 3.63 V – 1.8 3 ps f = 125 MHz, 1.8 V – 12 20 ps f = 125 MHz, Vdd = 2.5 V, 2.8 V, 3.0 V or 3.3 V – 14 30 ps f = 125 MHz, Vdd = 1.8 V – 0.7 – ps f = 125 MHz, Integration bandwidth = 900 kHz to 7.5 MHz – 1.5 – ps f = 125 MHz, Integration bandwidth = 12 kHz to 20 MHz Table 2. Pin Description Pin Top View Symbol Functionality Output Enable 1 OE/ ST /NC Standby No Connect H[1]: specified frequency output L: output is high impedance. Only output driver is disabled. H[1]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. Any voltage between 0 and Vdd or Open[1]: Specified frequency output. Pin 1 has no function. 2 GND Power Electrical ground[2] 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[2] OE/ST/NC 1 4 VDD GND 2 3 OUT Figure 1. Pin Assignments Notes: 1. In OE or ST mode, a pull-up resistor of 10 k or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 µF or higher between Vdd and GND is required. Rev 1.72 Page 2 of 19 www.sitime.com SiT8925B High Frequency, Automotive AEC-Q100 Oscillator Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 °C Vdd -0.5 4 V Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Junction Temperature[3] – 150 °C JA, 4 Layer Board JA, 2 Layer Board JC, Bottom (°C/W) (°C/W) (°C/W) 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 Note: 3. Exceeding this temperature for extended period of time may damage the device. Table 4. Thermal Consideration[4] Package Note: 4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[5] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 85°C 93°C 105°C 113°C 125°C 133°C Note: 5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev 1.72 Page 3 of 19 www.sitime.com SiT8925B High Frequency, Automotive AEC-Q100 Oscillator Test Circuit and Waveform Vdd Vout 0.1 µF tr 3 4 Power Supply Test Point 1 tf 80% Vdd 15 pF (including probe and fixture capacitance) 2 50% 20% Vdd High Pulse (TH) Low Pulse (TL) Period Vdd 1 k OE/ST/NC Function Figure 2. Test Circuit[6] Figure 3. Waveform[6] Note: 6. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams Vdd Vdd 90% Vdd 50% Vdd T_start Pin 4 Voltage No Glitch during start up ST Voltage CLK Output T_resume CLK Output HZ HZ T_start: Time to start from power-off T_resume: Time to resume from ST Figure 4. Startup Timing (OE/ ST Mode)[7] Figure 5. Standby Resume Timing ( ST Mode Only) Vdd Vdd 50% Vdd OE Voltage 50% Vdd T_oe OE Voltage T_oe CLK Output CLK Output HZ HZ T_oe: Time to re-enable the clock output T_oe: Time to put the output in High Z mode Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only) Note: 7. SiT8925 has “no runt” pulses and “no glitch” output during startup or resume. Rev 1.72 Page 4 of 19 www.sitime.com SiT8925B High Frequency, Automotive AEC-Q100 Oscillator Performance Plots[8] 1.8 2.5 2.8 3.0 3.3 6.5 6.3 DUT1 DUT2 DUT3 DUT4 DUT5 DUT6 DUT7 DUT8 DUT9 DUT10 DUT11 DUT12 DUT13 DUT14 DUT15 DUT16 DUT17 DUT18 DUT19 DUT20 25 6.1 20 Frequency (ppm) Idd (mA) 5.9 5.7 5.5 5.3 5.1 15 10 5 0 -5 -10 4.9 -15 4.7 -20 -25 4.5 115 117 119 121 123 125 127 129 131 133 135 137 -55 -35 -15 Frequency (MHz) 2.5 V 2.8 V 3.0 V 1.8 V 3.3 V 85 105 125 2.5 V 2.8 V 3.0 V 3.3 V 53 3.0 Duty cycle (%) RMS period jitter (ps) 65 54 3.5 2.5 2.0 1.5 52 51 50 49 48 1.0 47 0.5 46 45 0.0 115 117 119 121 123 125 127 129 131 133 135 115 137 117 119 121 123 2.5 V 2.8 V 127 129 131 133 135 137 Figure 11. Duty Cycle vs Frequency Figure 10. RMS Period Jitter vs Frequency 1.8 V 125 Frequency (MHz) Frequency (MHz) 3.0 V 1.8 V 3.3 V 2.5 2.5 2.0 2.0 Fall time (ns) Rise time (ns) 45 55 4.0 1.5 1.0 2.5 V 2.8 V 3.0 V 3.3 V 1.5 1.0 0.5 0.5 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 -40 Temperature (°C) -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 Temperature (°C) Figure 12. 20%-80% Rise Time vs Temperature Rev 1.72 25 Figure 9. Frequency vs Temperature Figure 8. Idd vs Frequency 1.8 V 5 Temperature (°C) Figure 13. 20%-80% Fall Time vs Temperature Page 5 of 19 www.sitime.com SiT8925B High Frequency, Automotive AEC-Q100 Oscillator Performance Plots[8] 1.8 V 2.5 V 2.8 V 3.0 V 1.8 V 3.3 V 2.5 V 2.8 V 3.0 V 3.3 V 1.0 2.0 0.9 1.8 IPJ (ps) IPJ (ps) 0.8 1.6 1.4 0.7 0.6 1.2 0.5 1.0 0.4 115 117 119 121 123 125 127 129 131 133 135 137 115 Frequency (MHz) 117 119 121 123 125 127 129 131 133 135 137 Frequency (MHz) Figure 14. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[9] Figure 15. RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency[9] Notes: 8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Rev 1.72 Page 6 of 19 www.sitime.com SiT8925B High Frequency, Automotive AEC-Q100 Oscillator Programmable Drive Strength The SiT8925 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: ◼ Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. ◼ Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. ◼ Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section. The SiT8925 can support up to 30 pF in maximum capacitive loads with up to 3 additional drive strength settings. Refer to the Rise/Tall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. SiT8925 Drive Strength Selection Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 1. Select the table that matches the SiT8925 nominal supply voltage (1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V) 2. Select the capacitive load column that matches the application requirement (5 pF to 30 pF) 3. Under the capacitive load column, select the desired rise/fall times. EMI Reduction by Slowing Rise/Fall Time Figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. trise=0.05 trise=0.1 trise=0.15 trise=0.2 trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 10 Harmonic amplitude (dB) 0 -10 -20 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: Max Frequency = 1 5 x Trf_20/80 -30 -40 where Trf_20/80 is the typical value for 20%-80% rise/fall time. -50 -60 -70 -80 Example 1 1 3 5 7 9 11 Calculate fMAX for the following condition: Harmonic number Figure 16. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. ◼ Vdd = 3.3 V (Table 11) ◼ Capacitive Load: 30 pF ◼ Desired Tr/f time = 1.46 ns (rise/fall time part number code = U) Part number for the above example: SiT8925BAE12-18E-137.000000 Drive strength code is inserted here. Default setting is “-” High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3 V SiT8925 device with default drive strength setting, the typical rise/fall time is 0.46 ns for 5 pF output load. The typical rise/fall time slows down to 1 ns when the output load increases to 15 pF. One can choose to speed up the rise/fall time to 0.72 ns by then increasing the driven strength setting on the SiT8925 to “F”. Rev 1.72 Page 7 of 19 www.sitime.com SiT8925B High Frequency, Automotive AEC-Q100 Oscillator Rise/Fall Time (20% to 80%) vs CLOAD Tables[10] Table 7. Vdd = 1.8 V Rise/Fall Times for Specific CLOAD Table 8. Vdd = 2.5 V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF Drive Strength\ CLOAD 5 pF 15 pF T 0.93 n/a R 1.45 E U F or "-": default 0.78 0.70 0.65 n/a 1.48 1.30 B 1.09 n/a T or "-": default 0.62 1.28 Table 9. Vdd = 2.8 V Rise/Fall Times for Specific CLOAD 0.54 1.00 0.43 0.96 F 0.34 0.88 n/a 30 pF n/a B 0.89 n/a T or "-": default 0.51 1.00 n/a n/a n/a E 0.38 0.92 n/a n/a U 0.30 0.83 n/a 1.48 F 0.27 0.76 1.39 0.97 n/a T or "-": default 0.55 1.12 n/a n/a E 0.44 1.00 U 0.34 0.88 0.81 Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF n/a R 1.22 30 pF B 0.29 E U Table 10. Vdd = 3.0 V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF n/a R 1.29 F 15 pF n/a Table 11. Vdd = 3.3 V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF n/a R 1.16 30 pF n/a B 0.81 n/a n/a T or "-": default 0.46 1.00 n/a E 0.33 0.87 n/a U 0.28 0.79 1.46 F 0.25 0.72 1.31 Note: 10. “n/a” indicates that the resulting rise/fall time from the respective combination of the drive strength and output load does not provide rail-to-rail swing and is not available. Rev 1.72 Page 8 of 19 www.sitime.com SiT8925B High Frequency, Automotive AEC-Q100 Oscillator In addition, the SiT8925 supports “no runt” pulses and “no glitch” output during startup or when the device output driver is enabled as shown in the waveform captures in Figure 17 and Figure 18. Pin 1 Configuration Options (OE, ST , or NC) Pin 1 of the SiT8925 can be factory-programmed to support three modes: Output enable (OE), Standby (ST ̅ ̅ ̅ ) or No Connect (NC). These modes can also be programmed with the Time Machine II using Field Programmable Oscillators. Output Enable (OE) Mode In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in