SIT1576AI-J1-33E-0200.000000

SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Features ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ Applications 1 Hz to 2.5 MHz ±5 ppm all-inclusive frequency stability Factory programmable output frequency World’s smallest TCXO Footprint: 1.2 mm2 ▪ 1.5 x 0.8 mm CSP ▪ No external bypass cap required Improved stability reduces system power with fewer network timekeeping updates Ultra-low power: 6 µA (100 kHz) Supply voltage range: 1.62 V to 3.63 V Operating temperature ranges: -20°C to +70°C, -40°C to +85°C Pb-free, RoHS and REACH compliant ◼ ◼ ◼ ◼ ◼ Health and wellness monitors Smart pens ULP input devices Proprietary wireless Sensor interface Electrical Specifications Table 1. Electrical Characteristics Conditions: Min/Max limits are over temperature, V DD = 1.8 V ±10%, unless otherwise stated. Typicals are at 25°C and VDD = 1.8 V. Parameter Symbol Min. Typ. Max. Unit Condition Frequency and Stability Output Frequency Total Frequency Stability[1] Allan Deviation First Year Frequency Aging FOUT F_stab 1 2.5 M Hz -5 5 ppm -20 20 ppm AD 1e-8 F_aging ±1 4e-8 All inclusive, Stability code: E All inclusive, Stability code: 1 1 second averaging time ppm TA = 25°C, VDD = 1.8V Jitter Performance Integrated Phase Jitter IPJ 2 3.5 nsRMS Period Jitter PJ 2.2 4.5 nsRMS Peak-to-Peak Period Jitter PJp-p 20 35 nsp-p Operating Supply Voltage VDD FOUT > 1 kHz, Integration bandwidth = 100 Hz to FOUT /2. Inclusive of 50 mV peak-to-peak sinusoidal noise on VDD. Noise frequency 100 Hz to 20 MHz Cycles = 10,000, f = 100 kHz. Per JEDEC standard 65B, tested at 100 kHz. See performance plot for other frequencies. Supply Voltage and Current Consumption No Load Supply Current Start-up Time at Power-up 1.62 IDD t_start 3.63 V FOUT = 1 Hz FOUT = 33 kHz FOUT = 100 kHz 3.65 4.5 6 5 5.5 7 13 33 16 40 FOUT = 1 MHz FOUT = 2 MHz 150 300 FOUT > 200 Hz. Measured when supply reaches 90% of final VDD to the first output pulse and within specified min/max frequency limit. 300 + 2.0 cycles 300 + 2.5 cycles µA ms 10 Hz < FOUT ≤ 200 Hz. Measured when supply reaches 90% of final VDD to the first output pulse and within specified min/max frequency limit. 1 Hz ≤ FOUT ≤ 10 Hz. Measured when supply reaches 90% of final VDD to the first output pulse and within specified min/max frequency limit. 500 + 2.5 Cycles Operating Temperature Range Operating Temperature Range Op_Temp -20 70 °C “C” ordering code -40 85 °C “I” ordering code LVCMOS Output Output Rise/Fall Time tR, tF Output Clock Duty Cycle DC 45 9 Output Voltage High VOH 90% Output Voltage Low VOL 20 ns 55 % 10% 20-80%, 15 pF load, VDD = 1.8V +/-10% VDD IOH = -50 µA, 15 pF load VDD IOL = 50 µA, 15 pF load Note: 1. Includes initial tolerance, over temp stability, 2x reflow, VDD range, board-level under fill, and 20% load variation. Tested with Agilent 53132A frequency counter. Measured with ≥100 ms gate time for accurate frequency measurement. Rev. 1.31 25 March 2021 www.sitime.com SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Table 2. Pin Configuration Pin Symbol I/O 1 NC Internal Test 2 CLK Out OUT 3 Vdd Power Supply 4 GND Power Supply Ground Top View Functionality No Connect. Leave floating. Pin 1 is for internal testing and is designed to be left floating. CAL/NC NC 1 4 GND CLK Out 2 3 Vdd Oscillator clock output. Operates from nominal supply voltages between 1.8 V and 3.3 V. Under normal operating conditions, Vdd does not require external bypass/decoupling capacitor(s). SiT1576 includes on-chip Vdd filtering. Figure 1. Pin Assignment Connect to ground. Table 3. Absolute Maximum Ratings Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameters Test Conditions Value Continuous Power Supply Voltage Range (Vdd) Unit -0.5 to 4.0 V 105 °C Continuous Maximum Operating Temperature Range ≤ 30 minutes 125 °C Human Body Model (HBM) ESD Protection JESD22-A114 2000 V Charge-Device Model (CDM) ESD Protection JESD22-C101 750 V Machine Model (MM) ESD Protection JESD22-A115 300 V g Short Duration Maximum Operating Temperature Range Latch-up Tolerance JESD78 Compliant Mechanical Shock Resistance Mil 883, Method 2002 20,000 Mechanical Vibration Resistance Mil 883, Method 2007 70 g 150 °C -65 to 150 °C 1508 CSP Junction Temperature Storage Temperature System Block Diagram VDD GND Control NVM Temp-to-Digital Prog Prog Driver NC Figure 2. SiT1576 Block Diagram Rev. 1.31 Page 2 of 10 www.sitime.com SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Description SiT1576 is an ultra-small and ultra-low power Factory programmable TCXO with an output frequency range between 1 Hz to 2.5 MHz. SiTime’s silicon MEMS technology enables the first 1 Hz – 2.5 MHz TCXO in the world’s smallest footprint and chip-scale packaging (CSP). Typical supply current is only 6 µA (100 kHz). SiTime's MEMS oscillator consists of a MEMS resonator and a programmable analog circuit. SiT1576 MEMS resonator is built with SiTime’s unique MEMS First® process. A key manufacturing step is EpiSeal ® during which the MEMS resonator is annealed with temperatures over 1000°C. EpiSeal creates an extremely strong, clean, vacuum chamber that encapsulates the MEMS resonator and ensures the best performance and reliability. During EpiSeal, a poly silicon cap is grown on top of the resonator cavity, which eliminates the need for additional cap wafers or other exotic packaging. As a result, SiTime’s MEMS resonator die can be used like any other semiconductor die. One unique result of SiTime’s MEMS First and EpiSeal manufacturing processes is the capability to integrate SiTime’s MEMS die with a SOC, ASIC, microprocessor or analog die within a package to eliminate external timing components and provide a highly integrated, smaller, cheaper solution to the customer. Dynamic Temperature Frequency Response Dynamic Temperature Frequency Response is the rate of frequency change during temperature ramps. This is an important performance metric when the oscillator is mounted near a high power component (e.g. SoC or power management) that may rapidly change the temperature of surrounding components. For moderate temperature ramp rates (5°C/sec), the latency in the temperature compensation loop contributes a larger frequency error, which is dependent on the temperature compensation update rate. This part achieves excellent performance at 3 Hz update rate. This device family supports faster update rates for further reducing dynamic frequency error at the expense of slightly increased current consumption. TCXO Frequency Stability SiT1576 is factory calibrated (trimmed) over multiple temperature points to guarantee extremely tight stability over temperature. Unlike quartz crystals that have a classic tuning fork parabola temperature curve with a 25°C turnover point with a 0.04 to 0.06 ppm/°C2 temperature coefficient, the SiT1576 temperature coefficient is calibrated and corrected over temperature with an active temperature correction circuit. The result is a 32 kHz TCXO with extremely tight frequency variation over the -40°C to +85°C temperature range. When measuring the output frequency of SiT1576 with a frequency counter, it is important to make sure the counter's gate time is >100 ms. Shorter gate times may lead to inaccurate measurements Similarly, the gate time will need to increase for frequencies in the 1 Hz to 500 Hz frequency range. Rev. 1.31 Page 3 of 10 www.sitime.com SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Typical Operating Curves Frequency Stability (PPM) (TA = 25°C, Vdd = 1.8 V, supply current plots are no load, unless otherwise stated) Internal Caps Charging Logic Start-up NVM Read OSC Start-up Temperature Compensation (13 µA) 350ms Steady State 33 kHz 4.5 Temperature (°C) Figure 3. Frequency Stability over Temperature Figure 4. Start-up and Steady-State Current Profile 4.5 FOUT = 33 kHz 4.3 No Vdd bypass Current (µA) 4.1 VDD = 3.3 V 3.9 3.7 VDD = 1.8 V 10 nF Vdd bypass 3.5 3.3 -40 -20 0 20 40 60 80 100 Temperature (°C) Figure 6. Supply Current vs Temperature (FOUT = 1 Hz) Figure 5. Power Supply Noise Rejection 5 8 4.9 7.75 7.5 4.8 VDD = 3.3 V 7.25 7 VDD = 3.3 V 4.6 Current (µA) Current (µA) 4.7 4.5 4.4 4.3 VDD = 1.8 V 4.2 6.5 6.25 6 5.75 VDD = 1.8 V 5.5 4.1 5.25 4 5 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Figure 7. Supply Current vs Temperature (FOUT = 100 Hz) Rev. 1.31 6.75 Figure 8. Supply Current vs Temperature (FOUT = 100 kHz) Page 4 of 10 www.sitime.com SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Typical Operating Curves (continuous) (TA = 25°C, Vdd = 1.8 V, supply current plots are no load, unless otherwise stated) 18 32.5 31 17.25 29.5 16.5 VDD = 3.3 V 26.5 15 25 14.25 23.5 Current (µA) Current (µA) VDD = 3.3 V 28 15.75 13.5 12.75 22 20.5 19 12 17.5 11.25 16 VDD = 1.8 V 14.5 10.5 VDD = 1.8 V 13 9.75 11.5 10 9 -40 -20 0 20 40 60 80 -40 100 -20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Figure 9. Supply Current vs Temperature (FOUT = 500 kHz) Figure 10. Supply Current vs Temperature (FOUT = 1 MHz) 64 57 61 55 53 58 VDD = 3.3 V 51 VDD = 3.3 V 55 49 52 49 45 Current (µA) Current (µA) 47 43 41 39 37 43 40 37 35 33 34 31 VDD = 1.8 V 29 VDD = 1.8 V 31 28 27 25 25 -40 -20 0 20 40 60 80 100 -40 Temperature (°C) -20 0 20 40 60 80 100 Temperature (°C) Figure 11. Supply Current vs Temperature (FOUT = 1.85 MHz) Rev. 1.31 46 Figure 12. Supply Current vs Temperature (FOUT = 2 MHz) Page 5 of 10 www.sitime.com SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Dynamic Frequency Response for Moderate Temperature Ramps Frequency accuracy under a moderate temperature ramp up to 2°C/sec is limited by the TCXO’s trimmed accuracy of the frequency stability over-temperature. Note: 2. Measured relative to 32.768 kHz. Rev. 1.31 Page 6 of 10 www.sitime.com SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Dynamic Frequency Response for Fast Temperature Ramps 10°C/sec Temp Ramp Frequency Response 5°C/sec Temp Ramp Frequency Response ~10°C/sec [3] [3] ~5°C/sec 3 Hz Temp Comp Refresh Rate 3 Hz Temp Comp Refresh Rate For temperature ramps >5°C/sec, the frequency accuracy is limited by the update rate of the temperature compensation path (see the 5°C/sec and 10°C/sec plots). Contact SiTime for applications that require improved dynamic performance. Note: 3. Referenced to 32.768 kHz. Rev. 1.31 Page 7 of 10 www.sitime.com SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Dimensions and Patterns Package Size – Dimensions (Unit: mm) Recommended Land Pattern (Unit: mm) #4 #3 #2 #1 (soldermask openings shown with dashed line around NSMD pad) Recommended 4-mil (0.1mm) stencil thickness Manufacturing Guidelines 1) No Ultrasonic or Megasonic cleaning: Do not subject SiT1576 to an ultrasonic or megasonic cleaning environment. Permanent damage or long term reliability issues may occur. 2) Applying board-level underfill and overmold is acceptable and will not impact the reliability of the device. 3) Reflow profile, per JESD22-A113D. Rev. 1.31 4) The SiT1576 CSP includes a protective, opaque polymer top-coat. If the SiT1576 will see intense light, especially in the 1.0-1.2 µm IR spectrum, we recommend a protective “glob-top” epoxy or other cover to keep the light from negatively impacting the frequency stability. 5) For additional manufacturing guidelines and marking/tape-reel instructions, refer to SiTime Manufacturing Notes. Page 8 of 10 www.sitime.com SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Ordering Information SiT1576AI-JE-XXE-XXXX.XXXXXXQ Part Family Packaging “SiT1576” “S”: 8 mm Tape & Reel, 10 ku reel “Q”: 8 mm Tape & Reel, 5 ku reel “D”: 8 mm Tape & Reel, 3 ku reel “E”: 8 mm Tape & Reel, 1 ku reel Revision Letter “A”: is the revision Samples in cut Tape Temperature Range “C”: Extended Commercial, -20 to 70ºC “I”: lndustrial, -40 to 85ºC Output Frequency Package Size Enter your desired frequency as shown below: Continuous frequency options from 1Hz to 2.5 MHz “J”: 1.5 mm x 0.8 mm CSP 2500.000000 = 2.5 MHz 1850.000000 = 1.85 MHz 0512.288000 = 512.288 kHz 0010.000000 = 10.0 kHz 0004.096000 = 4.0960 kHz 0000.100256 = 100.256 Hz 0000.010000 = 10.0 Hz 0000.001000 = 1.0 Hz 0000.001100 = 1.10 Hz 0000.005123 = 5.123 Hz All-Inclusive Over Temp Stability “E”: ±5 ppm “1”: ±20 ppm Supply Voltage XX = 1.8 V – 3.3 V 1.8 V = 18 2.0 V = 20 2.5 V = 25 3.0 V = 30 3.3 V = 33 Rev. 1.31 Page 9 of 10 www.sitime.com SiT1576 1.2 mm2 µPower, Low-Jitter, 1 Hz – 2.5 MHz Super-TCXO Table 4. Revision History Version Release Date Change Summary 0.25 13-Jan-2016 Initial Release of Advanced datasheet 0.5 10-Mar-2016 Preliminary datasheet initial release 0.9 15-Feb-2017 Updated Package Outline Drawing (POD) Updated part number ordering information Updated max programmable frequency Updated logo and company address, other page layout changes 1.0 9-May-2017 Final Release Updated supply current vs frequency Updated start-up time 1.1 12-Jun-2017 Updated max operating frequency to 2.0 MHz 1.2 3-Aug-2017 Added additional typical operating curves Updated typical No Load Supply Current (Table 1) 1.3 15-Mar-2018 Updated max operating frequency from 2.0MHz to 2.5MHz 1.31 25-Mar-2021 Added Option “D” for 3ku reels to the Ordering Information Updated hyperlinks, trademarks, date format and layout formatting SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439 © SiTime Corporation 2018-2021. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liabi lity for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. Rev. 1.31 Page 10 of 10 www.sitime.com