SI7465DP-T1-E3-VB

SI7465DP-T1-E3 www.VBsemi.com P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -60 RDS(on) () at VGS = -10 V 0.0210 RDS(on) () at VGS = -4.5 V 0.0288 ID (A) • 100 % Rg and UIS tested -36 Configuration Single Package DFN 5X6 S DFN5X6 Top View Top View Bottom View G 1 8 2 7 3 6 4 5 PIN1 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage PARAMETER VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID -36 IS -60 -100 IAS -36 EAS 64.8 TJ, Tstg Soldering Recommendations (Peak Temperature) d, e V -21 IDM PD UNIT 68 22 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL LIMIT RthJA 68 RthJC 2.2 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). 服务热线：400-655-8788 1 SI7465DP-T1-E3 www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS - - ± 100 VGS = 0 V VDS = -60 V - - -1 - - -50 -150 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = -60 V, TJ = 125 °C VGS = 0 V VDS = -60 V, TJ = 175 °C - - On-State Drain Current a ID(on) VGS = -10 V VDS  -5 V -30 - - VGS = -10 V ID = -10 A - 0.0210 - VGS = -10 V ID = -10 A, TJ = 125 °C - 0.0409 - VGS = -10 V ID = -10 A, TJ = 175 °C - 0.0504 - VGS = -4.5 V ID = -5 A - 0.0288 - - 26 - Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs VDS = -15 V, ID = -10 A V nA μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = -10 V VDS = -25 V, f = 1 MHz VDS = -30 V, ID = -5 A f = 1 MHz td(on) tr td(off) VDD = -30 V, RL = 6  ID  -5 A, VGEN = -10 V, Rg = 1  tf - 2600 3400 - 310 450 - 200 275 - 65 100 - 9.5 - - 19 - 0.50 1.19 1.80 - 15 25 pF nC  - 5 10 - 40 75 - 6 12 - - -100 A - -0.80 -1.2 V ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -10 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.   服务热线：400-655-8788 2 SI7465DP-T1-E3 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 80 10000 10000 VGS = 10 V thru 5 V VGS = 4 V 40 100 20 1000 48 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 64 1st line 2nd line 2nd line ID - Drain Current (A) 80 TC = 25 °C 32 100 16 TC = 125 °C VGS = 3 V TC = -55 °C 0 0 10 0 2 4 6 8 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title Axis Title 50 0.10 10000 10000 TC = 125 °C 20 100 10 0 5 10 15 20 1000 0.06 VGS = 4.5 V 0.04 100 0.02 VGS = 10 V 0.00 10 0 0.08 10 0 25 16 64 Transconductance On-Resistance vs. Drain Current Axis Title 2000 100 Crss Coss 0 10 15 30 45 60 10000 ID = 5 A VDS = 30 V 8 1000 6 1st line 2nd line Ciss 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 1000 3000 80 10 10000 4000 2nd line C - Capacitance (pF) 48 ID - Drain Current (A) 2nd line Axis Title 0 32 ID - Drain Current (A) 2nd line 5000 1000 1st line 2nd line 1000 30 2nd line RDS(on) - On-Resistance (Ω) TC = 25 °C 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 40 4 100 2 0 10 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge 100 服务热线：400-655-8788 3 SI7465DP-T1-E3 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 10 A 10 2nd line IS - Source Current (A) VGS = 10 V 1000 1.7 VGS = 4.5 V 1.3 100 0.9 0.5 0 25 50 1000 1 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 -25 TJ = 150 °C 1st line 2nd line 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.10 1.0 10000 10000 0.7 1000 0.06 TJ = 150 °C 0.04 100 0.02 0.00 4 6 0.1 100 -0.5 10 2 ID = 5 mA -0.2 TJ = 25 °C 0 1000 0.4 1st line 2nd line 2nd line VGS(th) Variance (V) 0.08 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 250 μA 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA -63 1000 -66 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) -60 -69 100 -72 -75 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain-Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 SI7465DP-T1-E3 www.VBsemi.com THERMAL RATINGS (TC = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 μs 10 1000 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 Limited by RDS(on) (1) 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 68 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 5 SI7465DP-T1-E3 www.VBsemi.com THERMAL RATINGS (TC = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                   服务热线：400-655-8788 6 SI7465DP-T1-E3 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.