FDMS6681Z-VB

FDMS6681Z www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0032 at VGS = - 10 V - 100 0.0050 at VGS = - 4.5 V - 80 • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested Qg (Typ.) 78 nC RoHS COMPLIANT APPLICATIONS • Notebook - Load Switch S DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e V - 100 - 75 - 31.6b, c - 25.3b, c - 300 IDM Pulsed Drain Current Unit - 60a - 5.6b, c - 40 80 104 66.6 6.25b, c 4.0b, c - 55 to 150 260 A mJ W °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 15 0.9 Maximum 20 1.2 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. The DFN5x6 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 °C/W. 服务热线：400-655-8788 1 FDMS6681Z www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V - 31 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS = - 5 V, VGS = - 10 V 6.5 - 1.0 - 30 µA A VGS = - 10 V, ID = - 20 A 0.0032 VGS = - 4.5 V, ID = - 15 A 0.005 VDS = - 15 V, ID = - 20 A 95 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 8650 VDS = - 15 V, VGS = 0 V, f = 1 MHz 1125 VDS = - 15 V, VGS = - 10 V, ID = - 20 A VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 78 120 27 f = 1 MHz nC VDD = - 15 V, RL = 15 Ω ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω Ω 1.7 25 40 15 30 110 170 30 50 td(on) 110 170 100 150 100 150 50 75 td(off) VDD = - 15 V, RL = 15 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω tf Fall Time 250 tf tr Rise Time Turn-Off Delay Time 167 35 td(on) Turn-On Delay Time pF 1215 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 60 100 IS = - 5 A IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.74 - 1.1 V 50 100 ns 65 130 nC 26 24 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 FDMS6681Z www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.2 100 VGS = 10 thru 4 V 1.0 TC = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 80 60 40 0.8 0.6 TC = 25 °C 0.4 20 0.2 VGS = 3 V 0 0.0 0.5 1.0 1.5 TC = 125 °C 0.0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 12 000 0.0060 VGS = 4.5 V Ciss 0.0050 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.0055 0.0045 0.0040 0.0035 VGS = 10 V 8000 4000 0.0030 Coss 0.0025 Crss 0 0.0020 0 20 40 60 80 0 100 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.8 ID = 28 A ID = 20 A 8 VDS = 7.5 V VDS = 15 V 6 VDS = 22.5 V 4 1.5 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 VGS = 10 V 1.2 VGS = 4.5 V 0.9 2 0 0 50 100 150 Qg - Total Gate Charge (nC) Gate Charge 200 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 FDMS6681Z www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.025 I S - Source Current (A) 10 R DS(on) - On-Resistance (Ω) 100 TJ = 25 °C TJ = 150 °C 1 0.1 TJ = - 50 °C 0.01 0.020 0.015 0.010 TJ = 125 °C 0.005 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 200 0.8 0.6 160 ID = 250 µA 0.4 ID = 1 mA 0.2 Power (W) VGS(th) Variance (V) 1 120 80 0.0 40 - 0.2 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0 .001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 1 ms 10 10 ms 100 ms 1 1s 10 s 0.1 100 s, DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 FDMS6681Z www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 I D - Drain Current (A) 120 90 Package Limited 60 30 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 125 3.0 100 2.4 75 1.8 Power (W) Power (W) Current Derating* 50 25 1.2 0.6 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 FDMS6681Z www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 54 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 6 FDMS6681Z www.VBsemi.com 服务热线：400-655-8788 7 FDMS6681Z www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DFN5X Xx X6 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 FDMS6681Z www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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