IRF9310TRPBF-VB

IRF9310TRPBF www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration D 8 D 6 • Enables higher power density • 100 % Rg and UIS tested APPLICATIONS SO-8 Single D 7 • TrenchFET® Gen IV p-channel power MOSFET -30 0.0050 0.0080 27 18 Single S D 5 • Battery management in mobile devices • Adapter and charger switch G • Battery switch • Load switch Top View 1 S 2 S 3 S 4 G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c IP TJ, Tstg LIMIT -30 ± 20 -18 -13 -11 -8 -145 -5 -2.8 b, c -25 31.2 5.6 3.6 3.1 b, c 2 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM t  10 s 34 Maximum junction-to-ambient b RthJA 40 18 22 Steady state RthJF Maximum junction-to-case (drain) Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bo ttom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 85 °C/W g. TC = 25 °C 服务热线：400-655-8788 UNIT °C/W 1 IRF9310TRPBF www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static VDS VGS = 0 V, ID = -250 μA -30 - - VDS/TJ ID = -10 mA - -17 - VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA - 5.5 - Gate-source threshold voltage Drain-source breakdown voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA -1 - -2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = +16 / -20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 70 °C - - -15 VDS  -10 V, VGS = -10 V -40 - - A  VGS = -10 V, ID = -15 A - 0.0050 - VGS = -4.5 V, ID = -10 A - 0.0080 - VDS = -15 V, ID = -15 A - 81 - - 3490 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 1420 - - 70 - - 56 84 μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -10 V, ID = -10 A - 27 41 VDS = -15 V, VGS = -4.5 V, ID =-10 A - 9.4 - - 8.2 - f = 1 MHz 1.5 3.5 6 - 15 30 - 6 12 - 39 78 tf - 10 20 td(on) - 34 68 - 86 172 - 31 62 - 22 44 td(on) tr td(off) tr td(off) VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -10 V, Rg = 1  VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = -5 A, VGS = 0 V - - -5 - - -150 - -0.73 -1.1 A V Body diode reverse recovery time trr - 44 88 ns Body diode reverse recovery charge Qrr - 41 82 nC Reverse recovery fall time ta - 19 - Reverse recovery rise time tb - 25 - IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRF9310TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 150 150 10000 10000 VGS = 10 V thru 5 V 120 60 100 TC = 125 °C VGS = 2 V 0 1 2 3 4 100 30 VGS = 3 V 0 TC = 25 °C 60 TC = -55 °C 0 10 5 10 0 1 2 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 Ciss VGS = 4.5 V 0.006 100 60 100 Crss 0 10 40 Coss 1800 900 VGS = 10 V 20 1000 2700 1st line 2nd line 1000 0.009 2nd line C - Capacitance (pF) 3600 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.012 0.003 80 100 10 0 6 12 18 24 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1.6 ID = 10 A 8 1000 1st line 2nd line 6 4 100 VDS = 10 V, 15 V, 20 V 2 0 10 服务热线：400-655-8788 24 36 48 60 2nd line RDS(on) - On-Resistance (Normalized) 10000 12 30 Axis Title 10 0 5 4500 10000 0 2nd line VGS - Gate-to-Source Voltage (V) 4 VDS - Drain-to-Source Voltage (V) 2nd line 0.015 0 3 10000 ID = 15 A 1.4 VGS = 10 V 1000 1.2 1st line 2nd line 30 1000 90 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 120 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature 3 IRF9310TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1.0 10000 ID = 250 μA 0.7 2nd line VGS(th) - Variance (V) TJ = 150 °C 1000 1 TJ = 25 °C 1st line 2nd line 2nd line IS - Source Current (A) 10 10000 0.1 100 1000 0.4 1st line 2nd line 100 ID = 5 mA 0.1 100 0.01 -0.2 0.001 -0.5 10 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) 2nd line TJ - Temperature (°C) 2nd line Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.020 150 10000 10000 120 1000 2nd line Power (W) 1000 TJ = 125 °C 0.008 90 1st line 2nd line 0.012 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 15 A 0.016 60 100 0.004 100 30 TJ = 25 °C 0 0 0.001 10 0 2 4 6 8 10 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) 2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM limited ID limited 100 μs1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms Limited by RDS(on) (1) 1 10 ms 0.1 TA = 25 °C Single pulse 0.01 0.01 (1) BVDSS limited 100 ms100 1s 10 s DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 IRF9310TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 32.0 10000 1000 19.2 1st line 2nd line 2nd line ID - Drain Current (A) 25.6 12.8 100 6.4 0 10 0 30 60 90 120 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 7.0 10000 2.0 5.6 10000 1.6 1.2 1st line 2nd line 2.8 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 4.2 0.8 100 1.4 100 0.4 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit 服务热线：400-655-8788 5 IRF9310TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 0.2 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 0.05 100 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 6 IRF9310TRPBF www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 0.101 mm 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 服务热线：400-655-8788 7 IRF9310TRPBF www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) (6.248) 0.246 (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 IRF9310TRPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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