ZXMN6A11DN8TA-VB

ZXMN6A11DN8TA www.VBsemi.com Dual N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET • 100 % Rg and UIS tested 60 RDS(on) (Ω) at VGS = 10 V 0.028 RDS(on) (Ω) at VGS = 4.5 V 0.030 ID (A) per leg 7 Configuration Dual SO-8 Dual D1 8 D1 7 D2 6 D2 5 D1 G1 Top View 2 1 G1 S1 D2 G2 4 3 G2 S2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 7 4 IS 3.6 IDM 28 IAS 18 EAS 16.2 PD UNIT 4 1.3 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 110 RthJF 34 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). 服务热线：400-655-8788 1 ZXMN6A11DN8TA www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance f VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 20 VGS = 10 V ID = 4.5 A- VGS = 10 V ID = 4.5 A, TJ = 125 °C VGS = 10 V ID = 4.5 A, TJ = 175 °C VGS = 4.5 V ID = 4 A- VDS = 15 V, ID = 4.5 A - - 0.028 - - 0.066 - - 0.081 0.030 - - 15 - - 600 750 - 110 140 V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 50 62 Total Gate Charge c Qg - 11.7 18 - 1.8 2.7 Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Qgs VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 5.3 A Qgd pF nC - 2.8 4.2 f = 1 MHz 1.3 - 6 td(on) - 7 11 tr VDD = 30 V, RL = 6.8 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω - 3.3 5 - 22.4 33.5 - 2.1 3.2 - - 28 A - 0.75 1.1 V Rg td(off) tf Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 2 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. 服务热线：400-655-8788 2 ZXMN6A11DN8TA www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 V GS = 10 V thru 5 V V GS = 4 V 24 ID - Drain Current (A) ID - Drain Current (A) 24 18 12 V GS = 3 V 6 18 12 T C = 25 °C 6 T C = 125 °C 0 T C = - 55 °C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics Output Characteristics 0.10 25 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) T C = -55 °C 20 T C = 25 °C 15 10 T C = 125 °C 0.08 0.06 V GS = 4.5 V 0.04 V GS = 10 V 0.02 5 0 0 0 3 6 9 ID - Drain Current (A) 12 0 15 Transconductance 6 12 18 ID - Drain Current (A) 24 30 On-Resistance vs. Drain Current 1000 10 VGS - Gate-to-Source Voltage (V) ID = 5.3 A C - Capacitance (pF) 800 Ciss 600 400 Coss 200 Crss 0 0 8 V DS = 30 V 6 4 2 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance 服务热线：400-655-8788 60 0 2 4 6 8 Qg - Total Gate Charge (nC) 10 12 Gate Charge 3 ZXMN6A11DN8TA www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 75 V GS = 10 V VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Normalized) ID = 5.3 A 1.7 V GS = 4.5 V 1.4 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 ID = 1 mA 72 69 66 63 60 - 50 175 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Junction Temperature 100 0.25 10 0.20 RDS(on) - On-Resistance (Ω) IS - Source Current (A) - 25 T J = 150 °C 1 T J = 25 °C 0.1 0.15 0.10 T J = 150 °C 0.01 0.05 0.001 0 T J = 25 °C 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.6 VGS(th) Variance (V) 0.3 0 -0.3 ID = 5 mA -0.6 ID = 250 μA -0.9 -1.2 -50 -25 0 50 25 75 100 TJ - Temperature (°C) 125 150 175 Threshold Voltage 服务热线：400-655-8788 4 ZXMN6A11DN8TA www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited Limited by RDS(on)* 10 ID - Drain Current (A) 100 µs 1 1 ms 10 ms 100 ms 1s 10 s, DC 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 5 ZXMN6A11DN8TA www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 ZXMN6A11DN8TA www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 服务热线：400-655-8788 7 VBA3638 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 VBA3638 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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