BSS138DW

Plastic-Encapsulate MOSFETs Dual N-channel MOSFET V(BR)DSS SOT-363 ID RDS(on)MAX 6 50 V   3.5Ω@10V  220mA 6Ω@4.5V   5 4 1 2 3 APPLICATION z Load Switch for Portable Devices z DC/DC Converter FEATURE High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z Equivalent Circuit MARKING Maximum ratings (Ta=25℃ unless otherwise noted) Parameter  Symbol Value Unit Drain-Source Voltage VDS 50 Continuous Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 0.22 A Power Dissipation PD 0.3 W RθJA 417 ℃/W Tj 150 Tstg -55 ~+150 Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature 1 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. V ℃ MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Gate-body leakage IGSS VDS =0V, VGS =±20V ±500 nA Zero gate voltage drain current IDSS VDS =50V, VGS =0V 0.5 µA VDS =30V, VGS =0V 100 nA 1.50 V 50 V On characteristics Gate-threshold voltage (note 1) VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gFS VDS =VGS, ID =1mA 0.80 VGS =10V, ID =0.22A 3.50 VGS =4.5V, ID =0.22A 6 VDS =10V, ID =0.22A 0.12 Ω S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 27 VDS =25V,VGS =0V, f=1MHz pF 13 6 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 1,2) Turn-off delay time (note 1,2) Fall time (note 1,2) td(on) 5 tr VDD=30V, VDS=10V, 18 td(off) ID =0.29A,RGEN=6Ω 36 tf ns 14 Drain-source body diode characteristics Body diode forward voltage (note 1) VSD IS=0.44A, VGS = 0V Notes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. 2 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 1.4 V Typical Characteristics Output Characteristics Transfer Characteristics 1.2 2.0 Ta=25℃ VDS=3V VGS=3V,4V,5V,6V Pulsed VGS=10V (A) (A) 1.5 ID VGS=5V 1.0 DRAIN CURRENT ID DRAIN CURRENT Pulsed 1.0 VGS=4V VGS=3V 0.5 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 0.2 VGS=2V 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0.0 5 0 1 2 Pulsed Ta=25℃ Pulsed ID=500mA 5 1.2 1.1 1.0 0.9 VGS=10V 0.8 RDS(ON) ( ) VGS=4.5V 4 ON-RESISTANCE ( ) RDS(ON) ON-RESISTANCE 5 (V) 6 1.3 3 0.7 Ta=100℃ 2 1 0.6 0.5 4 VGS RDS(ON) —— VGS RDS(ON) —— ID 1.5 1.4 3 GATE TO SOURCE VOLTAGE (V) Ta=25℃ 0.2 0.4 0.6 DRAIN CURRENT 0.8 ID 0 1.0 0 2 4 6 GATE TO SOURCE VOLTAGE (A) 8 VGS 10 (V) Threshold Voltage IS —— VSD 1 2.0 Ta=100℃ Ta=25℃ 0.01 1E-3 0.2 0.4 0.6 1.5 VTH 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) Pulsed 0.8 1.0 SOURCE TO DRAIN VOLTAGE 1.2 ID=250uA 1.0 0.5 0.0 25 1.4 50 75 JUNCTION TEMPERATURE VSD (V) 100 Tj (℃ ) 3 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 125 SOT-363 Package Outline Dimensions Dimension in Millimeters Symbol Min Max A 0.90 1.00 A1 0.010 0.100 B 1.20 1.40 bp 0.25 0.45 C 0.09 0.15 D 2.00 2.20 E 1.15 1.35 HE 2.15 2.55 Lp 0.25 0.46 θ 0º 6º 4 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.