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BAS716
Semiconductor
BAS16
Compiance
FAST SWITCHING DIODE
FEATURES
Small Package
z
Low Reverse Current
z
Fast Switching Speed
z
Surfce Mount Package Ideally Suited for Automatic Insetion
z
SOD-523
MARKING:S1
MAXIMUM RATINGS ( Ta=25 unless otherwise noted )
Symbol
Paramete
Value
Unit
100
V
75
V
RMS Reverse Voltage
53
V
Average Rectified Output Current
2
mA
VRM
Non-Repetitive Peak Reverse Voltage
VRRM
Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
VR(RMS)
IO
IFSM
Non-Rpetitive Peak Forward Surge Current @t=
PD
Power Dissipation
mW
Thermal Resistance from Junction to Ambient
/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
RJA
1ٞ
A
ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified)
Parameter
Symbol
Reverse voltage
V(BR)
Reverse current
IR
Test conditions
IR=100A
Min
Typ
75
VR=5V
nA
VR=V
A
0.
V
1
V
1
V
1.25
V
=
IF 10mA
VF
=
IF 50mA
=
IF 150mA
Total capacitance
Reverse recovery time
Ctot
=
=
VR 0V,f 1MHz
trr
Unit
V
=
IF 1mA
Forward voltage
Max
IF= IR =10mA, Irr=0.1*IR
pF
s
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BAS716
Semiconductor
Compiance
Typical Characteristics
Forward
Characteristics
Pulsed
2.0
(nA)
100
REVERSE CURRENT IR
T
a
T=
a 2
5℃
=1
00
℃
IF
(mA)
Pulsed
FORWARD CURRENT
Characteristics
Reverse
2.5
500
10
Ta=100 ℃
1.5
1.0
Ta=25 ℃
0.5
1
0.4
0.6
0.8
1.0
FORWARD VOLTAGE
VF
1.2
0.0
1.4
0
10
20
(V)
Capacitance Characteristics
2.5
(mW)
PD
1.5
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
2.0
1.0
0.5
5
10
REVERSE VOLTAGE
15
VR
(V)
50
60
70
VR
80
90
100
(V)
225
f=1MHz
0
40
Power Derating Curve
250
Ta=25℃
0.0
30
REVERSE VOLTAGE
20
200
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃)
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BAS716
Semiconductor
PACKAGE MECHANICAL DATA
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0.067
0.008 REF
0.001
0.003
7° REF
REEL SPECIFICATION
P/N
BAS716
PKG
QTY
SOD-523
3000
Compiance
BAS716
Semiconductor
Compiance
Attention
■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you
before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
circuitsfor safedesign, redundant design, and structural design.
■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from theauthorities concerned in
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■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written permission of MSKSEMI Semiconductor.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■ Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the
MSKSEMI Semiconductor productthat you intend to use.
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