AO3402

www.msksemi.com AO3402 Semiconductor Compiance Features 30V, 4.0 A, RDS(ON) =47mΩ@VGS = 4.5V Improved dv/dt capability Ｄ Fast switching Green Device Available Ｇ Applications Ｓ Notebook SOT-23-3L Load Switch LED applications D BVDSS G RDSON 30V ID 4.0A 47m S Absolute Maximum Ratings Tc=25 Symbol unless otherwise noted Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V Drain Current – Continuous (TC=25℃) 4.0 A Drain Current – Continuous (TC=100℃) 3.0 A Drain Current – Pulsed1 16 A Power Dissipation (TC=25℃) 1.4 W 0.012 W/℃ ID IDM PD Parameter Power Dissipation – Derate above 25℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol RθJA Parameter Thermal Resistance Junction to ambient Typ. --- Max. Unit 80 ℃/W www.msksemi.com AO3402 Semiconductor Compiance Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- V Reference to 25℃ , ID=1mA --- --0.06 V/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- --1 VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA VGS= ±12V , VDS=0V --- --- ±100 nA VGS=4.5V , ID=4A --- 47 60 VGS=2.5V , ID=3A --0.5 60 85 0.9 1.4 V --- -3 --- mV/℃ --- 7 --- S --- 8.4 --- --- 1 --- --- 2.2 --- --- 4.5 --- --- 13 --- --- 27 --- --- 8.3 --- --- 695 --- --- 45 --- --- 36 --- --- 1.5 --- Min. Typ. Max. Unit --- --- 4.0 A --- --- 8.0 A --- --- 1.2 V Off Characteristics Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Conditions uA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) gfs VGS(th) Temperature Coefficient Forward Transconductance VGS=VDS , ID =250uA VDS=10V , IS=3A m Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 Qgs Gate-Source Charge2 , 3 Qgd Gate-Drain Charge2 , 3 Td(on) Turn-On Delay Time2 , 3 Tr Td(off) Tf Rise VDD=10V , VGS=4.5V , RG=25 Time2 , 3 Turn-Off Delay Time2 , 3 ID=1A Fall Time2 , 3 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg VDS=10V , VGS=4.5V , ID=3A Gate resistance VDS=10V , VGS=0V , F=1MHz VGS=0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. www.msksemi.com AO3402 Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E1 E e e1 L  Dimensions In Millimeters Max. Min. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° REEL SPECIFICATION P/N AO3402 PKG SOT-23-3L QTY 3000 www.msksemi.com AO3402 Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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