THMPI111004D470MT

Molding Molding Power Power Inductors Inductors THMPI111004 Series FEATURES z Shielded construction z Low loss realized with low DCR z High performance (Isat) realized by metal dust core. z Ultra low buzz noise, due to composite construction. z RoHS, Halogen Free and REACH Compliance z High reliability -Reliability tests comply with AEC-Q200 选 择 APPLICATIONS 最 佳  z Electric Power Steering  z ABS Control Units  z Battery powered devices 的 z Car Navigation Systems MC 方 IDENTIFICATION -E PRODUCT 案 z Meters/Alarms z Car distance Control Units   THMPI 技 111004 D 8R2 M T ĸ  Ĺ ĺ Ļ  ļ 略 科 ķ   韬 z ķ T y p e : THMPI z ĸ External Dimensions (L×W×H) [mm]= 111004 z Ĺ Feature Type: Differential Inductance : 8R2=8.2 H z ĺNominal  z Ļ Inductance Tolerance : K=±10% M=±20% N=±30% z ļ Packing T=Tape Carrier Package 1/8 www.topleve.com THMPI111004 Series SPECIFICATIONS DC Resistance Heating Rating Current L0 (μH) DCR (mΩ) Idc (A) Isat (A) TYP. MAX. TYP. TYP. THMPI111004DR15MT 0.15 0.5 0.65 45.0 75.0 THMPI111004DR22MT 0.22 0.9 1.0 35.0 60.0 THMPI111004DR30MT 0.30 0.95 1.1 35.0 50.0 THMPI111004DR36MT 0.36 1.05 1.2 30.0 50.0 THMPI111004DR47MT 0.47 1.5 1.7 30.0 40.0 THMPI111004DR56MT 0.56 1.6 1.8 25.0 33.0 THMPI111004DR68MT 0.68 2.1 2.4 23.0 30.0 THMPI111004DR80MT 0.80 2.6 2.7 23.0 29.0 THMPI111004D1R0MT 1.0 3.0 3.3 19.0 28.0 THMPI111004D1R5MT 1.5 3.8 4.2 16.0 26.0 THMPI111004D2R2MT 2.2 6.0 7.0 12.0 18.0 THMPI111004D3R3MT 3.3 10.0 11.8 11.0 16.0 THMPI111004D4R7MT 4.7 17.0 20.0 9.0 15.0 THMPI111004D6R8MT 6.8 22.0 25.0 8.5 12.0 THMPI111004D8R2MT 8.2 25.0 27.0 8.0 9.0 THMPI111004D100MT 10.0 30.0 7.8 8.5 THMPI111004D150MT 15.0 40.0 45.0 6.5 7.0 THMPI111004D220MT 22.0 58.0 66.0 5.0 5.5 THMPI111004D330MT 33.0 85.0 92.0 4.4 5.0 47.0 130.0 145.0 3.3 3.5 68.0 178.0 195.0 2.5 3.0 100 315.0 350.0 2.2 2.3 THMPI111004D101MT 最 的 案 方 MC -E 技 韬 THMPI111004D680MT 略 THMPI111004D470MT 27.0 佳 ±20 %, 100 kHz, 1V 选 择 Current 科 Part No. Saturation Inductance Notes 1. All test data is referenced to 25 °C ambient 2. Operating temperature range - 55 °C to + 125 °C 3. Idc(A):DC current (A) that will cause an approximate ∆T of 40 °C(reference ambient temperature is 25°C) 4. Isat(A):DC current (A) that will cause L0 to dropapproximately30 % 5. The part temperature (ambient + temp rise) should not exceed 125 °C under worst case operating conditions. Circuit design, component placement, PWB trace size and thickness, airflow and other cooling provisions all affect the part temperature. Part temperature should be verified in the end application. 2/8 www.topleve.com THMPI111004 Series Graph THMPI111004DR15MT THMPI111004DR22MT 80 0.176 TEMP RISE(℃) 0.09 60 INDUCTANCE(μH) 0.06 40 0.03 20 0.132 60 INDUCTANCE(μH) 0.088 40 0.044 20 0 100 0 0 DC BIAS(Amps) 0.18 60 0.12 40 0.06 MC -E 20 10 20 30 40 50 60 70 0.288 80 TEMP RISE(℃) 0.216 60 INDUCTANCE(μH) 0.144 40 0.072 20 0 0 80 0 0 科 0 100 最 方 INDUCTANCE(μH) THMPI111004DR36MT 的 案 TEMP RISE(℃) INDUCTANCE(μH) 80 TEMP RISE(℃) 0.24 技 INDUCTANCE(μH) 0.36 100 TEMP RISE(℃) THMPI111004DR30MT 佳 DC BIAS(Amps) 0.3 0 10 20 30 40 50 60 70 80 90 选 择 90 80 70 60 50 40 30 20 10 80 TEMP RISE(℃) 0 0 0 100 TEMP RISE(℃) 0.22 INDUCTANCE(μH) 0.12 100 TEMP RISE(℃) INDUCTANCE(μH) 0.15 DC BIAS(Amps) 10 20 30 40 50 60 70 80 THMPI111004DR47MT 0.56 80 0.448 TEMP RISE(℃) 0.282 60 INDUCTANCE(μH) 0.188 40 0.094 20 0 INDUCTANCE(μH) 0.376 100 TEMP RISE(℃) INDUCTANCE(μH) 0.47 10 20 30 40 50 60 100 80 TEMP RISE(℃) 0.336 60 INDUCTANCE(μH) 0.224 40 0.112 20 0 0 THMPI111004DR56MT 70 DC BIAS(Amps) 0 0 0 5 10 15 20 25 30 35 40 45 50 DC BIAS(Amps) 3/8 www.topleve.com TEMP RISE(℃) 韬 略 DC BIAS(Amps) THMPI111004 Series Graph THMPI111004DR80MT THMPI111004DR68MT 80 0.64 TEMP RISE(℃) 0.408 60 INDUCTANCE(μH) 0.272 40 0.136 20 0 80 TEMP RISE(℃) 0.48 60 INDUCTANCE(μH) 0.32 40 0.16 20 0 0 5 10 15 20 25 30 35 40 45 50 0 0 DC BIAS(Amps) THMPI111004D1R0MT 1.5 方 INDUCTANCE(μH) 40 MC 0.4 0.2 20 0 5 80 0 TEMP RISE(℃) 0.9 60 INDUCTANCE(μH) 0.6 40 0.3 20 0 技 0 100 1.2 的 60 案 TEMP RISE(℃) 0.6 INDUCTANCE(μH) 80 TEMP RISE(℃) 0.8 THMPI111004D1R5MT 最 100 -E INDUCTANCE(μH) 1 佳 选 择 DC BIAS(Amps) 5 10 15 20 25 30 35 40 45 50 10 15 20 25 30 35 40 45 TEMP RISE(℃) 0 100 TEMP RISE(℃) 0.8 INDUCTANCE(μH) 0.544 100 TEMP RISE(℃) INDUCTANCE(μH) 0.68 0 0 5 10 DC BIAS(Amps) 15 20 25 30 35 40 韬 略 科 DC BIAS(Amps) 100 1.76 80 2.64 80 TEMP RISE(℃) 1.32 60 INDUCTANCE(μH) 0.88 40 0.44 20 0 INDUCTANCE(μH) 3.3 TEMP RISE(℃) INDUCTANCE(μH) 100 0 0 3 6 9 12 15 18 21 24 27 DC BIAS(Amps) TEMP RISE(℃) 1.98 60 INDUCTANCE(μH) 1.32 40 0.66 20 0 0 0 3 6 9 12 15 18 21 24 27 DC BIAS(Amps) 4/8 www.topleve.com TEMP RISE(℃) THMPI111004D3R3MT THMPI111004D2R2MT 2.2 THMPI111004 Series Graph 80 5.44 TEMP RISE(℃) 2.82 60 INDUCTANCE(μH) 1.88 40 0.94 20 0 4 6 80 TEMP RISE(℃) 60 INDUCTANCE(μH) 2.72 40 1.36 20 0 8 10 12 14 16 18 20 0 0 2 4 6 DC BIAS(Amps) THMPI111004D8R2MT 60 方 INDUCTANCE(μH) 40 MC 3.28 1.64 20 2 4 6 8 10 12 THMPI111004D100 MT 100 0 8 80 TEMP RISE(℃) 6 60 INDUCTANCE(μH) 4 40 2 20 0 0 14 0 2 4 科 0 技 0 的 案 4.92 INDUCTANCE(μH) 80 TEMP RISE(℃) TEMP RISE(℃) 6.56 10 最 100 -E INDUCTANCE(μH) 8.2 佳 选 择 DC BIAS(Amps) 8 10 12 14 16 18 20 8 10 12 14 DC BIAS(Amps) 韬 略 DC BIAS(Amps) 6 TEMP RISE(℃) 2 100 4.08 0 0 THMPI111004D6R8MT TEMP RISE(℃) 6.8 INDUCTANCE(μH) INDUCTANCE(μH) 3.76 100 TEMP RISE(℃) THMPI111004D4R7MT 4.7 THMPI111004D150 MT THMPI111004D220 MT 80 TEMP RISE(℃) 9 60 INDUCTANCE(μH) 6 40 3 20 0 0 0 1 2 3 4 5 6 7 8 INDUCTANCE(μH) 12 22 9 10 11 100 17.6 80 TEMP RISE(℃) 13.2 60 INDUCTANCE(μH) 8.8 40 4.4 20 0 0 0 1 2 3 4 5 6 7 8 9 DC BIAS(Amps) DC BIAS(Amps) 5/8 www.topleve.com TEMP RISE(℃) 100 TEMP RISE(℃) INDUCTANCE(μH) 15 THMPI111004 Series Graph THMPI111004D470 MT THMPI111004D330 MT 80 TEMP RISE(℃) 19.8 60 INDUCTANCE(μH) 13.2 40 6.6 20 37.6 28.2 1 2 3 4 5 6 7 60 INDUCTANCE(μH) 18.8 40 9.4 20 0 0 80 TEMP RISE(℃) 0 0 选 择 0 100 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 DC BIAS(Amps) 佳 DC BIAS(Amps) THMPI111004D680 MT 60 方 INDUCTANCE(μH) 40 MC 27.2 -E 13.6 技 0 的 TEMP RISE(℃) 40.8 案 80 TEMP RISE(℃) 54.4 THMPI111004D101 MT 最 100 20 0 科 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 略 DC BIAS(Amps) 韬 INDUCTANCE(μH) 68 6/8 www.topleve.com TEMP RISE(℃) 26.4 47 INDUCTANCE(μH) 100 TEMP RISE(℃) INDUCTANCE(μH) 33 THMPI111004 Series 韬 略 科 技 -E MC 方 案 的 最 佳 选 择 Confiuration and Dimensions : (Dimensions in mm) 7/8 www.topleve.com THMPI111004 Series RECOMMENDED SOLDERING TECHNOLOGIES ℃ Peak 245℃max 250℃ 250 ℃ Peak Max Ramp Up Rate=3℃/sec. Max Ramp Down Rate =6℃/sec. Ref low 佳 200℃ 选 择 217℃ 最 150℃ 案 的 Pre-heatimg MC 方 25℃ Ramp - up Pre-heatimg Reflow Peak Temp Temp.scope R.T.~150℃ 150℃~200℃ 217℃ 245±5℃ 60~180 sec 60~150sec 20~40sec 70~95 sec 70~95sec 20~35sec 技 科 韬 Note: 略 Time spec Time Ti me result -E Item. Cooling Peak Temp.~150℃ 1.Re-flow possible times:within 2 times 2.Nitrogen adopted is recommended while in re-flow The reflow profile in the above table is only for qualification and is not meant to specify board assembly profiles. Actual board assembly profiles must be based on the customer's specific board design, solder paste and process, and should not exceed the parameters as the Reflow profile shows. CONTACT INFORMATION SHENZHEN TECHNOLOGY CO.,LTD ContactTOP-FLIGHT Information ４ｔｈ　Ｆｌｏｏｒ，　Ｃ　Ｂｕｉｌｄｉｎｇ，　Ｑｕａｎｓｅｎ　Ｉｎｄｕｓｔｒｉａｌ　Ｐａｒｋ　，　Ｂｕｌｏｎｇ　Ｒｏａｄ，　Ｌｏｎｇｈｕａ　Ｎｅｗ　Ｄｉｓｔｒｉｃｔ，　Ｓｈｅｎｚｈｅｎ Tel: 86-755-82908191 Fax: 86-755-82908701 Email:kang@topleve.com Website: http://www.topleve.com www.topleve.com 8/8