KIA08TB70DD

FAST RECOVERY DIODE 8.0A，700V KIA 08TB70D SEMICONDUCTORS 1.Description This series are state−of−the−art devices designed for use in switching power supplies, inverters and as free wheeling diodes. 2. Features n Ultrafast 25 nanosecond recovery time n 175°C operating junction temperature n Epoxy meets UL 94 V−0 @ 0.125 in n Low forward voltage n Low leakage current n High temperature glass passivated junction n Reverse voltage to 700 V n Pb−free packages are available 3. Mechanical Characteristics n Case: epoxy, molded n Weight: 1.9 grams (approximately) n Finish: all external surfaces corrosion resistant and terminal n Leads are readily solderable n Lead temperature for soldering purposes: 260°C max for 10 seconds 4. Pin configuration Pin (TO-220) 1 3 Pin (TO-252、 TO-263) 1 2 3 1 of 2 Function Cathode Anode Function Cathode Cathode Anode Rev 1.1 JAN 2014 FAST RECOVERY DIODE 8.0A，700V KIA 08TB70D SEMICONDUCTORS 5. Maximum ratings Symbol VRRM VRWM VR Rating Units 700 V IF(AV) 8.0 A Peak repetitive forward current (Rated VR, square wave, 20 kHz), TC = 150°C IFM 16 A Nonrepetitive peak surge current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 A TJ,Tstg -65 to +175 ºC Symbol Rating Unit RθJC 2.0 ºC/W Parameter Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Average rectified forward current Total device, (Rated VR), TC = 150°C Operating junction temperature and storage temperature range 6. Thermal characteristics Parameter Maximum thermal resistance, junction−to−case 7. Electrical characteristics Rating Parameter Symbol Conditions Maximum Instantaneous Forward Voltage (Note 1) VF IF=8.0A, TC=25°C Maximum Instantaneous Reverse Current (Note 1) IR Maximum Reverse Recovery Time trr Min Typ Max - 1.8 2.6 TJ=150°C - - 500 TJ=25°C - - 25 - - 30 VR=600V IF=0.5A, IR=1.0A, IREC=0.25A Note:1. Pulse test: pulse width=5ms, Duty cycle≤2.0%. 、 2 of 2 Rev 1.1 JAN 2014 Unit V μA ns