ES1JL

ES1AL THRU ES1JL HD FL 50 SOD-1 23FL Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io 1A SOD-1 23FL ●VRRM 50V-600V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● ES1AL-ES1DL : ESL ● ES1EL-ES1GL : ESM ● ES1JL : ESH Item Symbol Unit ES1 Test Conditions AL BL CL DL EL GL JL Repetitive Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Average Forward Current IF(AV) A Surge(Non-repetitive)Forward Current IFSM A TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Junction Temperature Storage Temperature V 50 100 150 200 300 400 600 35 70 105 140 210 280 420 1.0 90 60Hz Half-sine wave ,1 cycle , Ta =25℃ 30 Electrical Characteristics (T=25℃ Unless otherwise specified） Item Symbol Unit Peak Forward Voltage VF V Maximum reverse recovery time trr ns Peak Reverse Current Thermal Resistance(Typical) IRRM1 I μA RθJ-A Test Condition IF =1.0A ES1 AL BL CL EL 0.95 IF=0.5A,IR=1.0A,Irr=0.25A GL 1.25 JL 1.70 35 Ta =25℃ 5 Ta =125℃ 100 Between junction and ambient 70 Between junction and terminal 25 VRM=VRRM ℃/W RθJ-L DL 1) 1) Notes: （1） Thermal resistance between junction and ambient and between junction and lead mounted on P.C.B with 3mm*3mm copper pad areas. High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 1.0 0.8 30 24 8.3ms Single Half Sine Wave JEDEC Method 0.6 18 0.4 12 0.2 6 Single Phase Half Wave 60Hz Resistive Load 0 0 50 150 Ta(℃) 100 1 2 20 100 Number of Cycles FIG.4：TYPICAL REVERSE CHARACTERISTICS IR(uA) FIG.3: TYPICAL FORWARD CHARACTERISTICS IF(A) 10 100 TJ=25℃ Pulse width=300us 1% Duty Cycle 1000 Tj=150℃ ES1AL-ES1DL 10 100 Tj=125℃ ES1EL-ES1GL 1.0 10 ES1JL 0.1 1.0 Tj=25℃ 0.01 0.4 0.1 0.6 0.8 1.0 1.2 1.4 1.6 VF(V) 0 20 40 60 80 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 SOD-1 23FL 1.8± 0.1 １．０ ±0.15 Cathode Band Top View 1.3± 0.1 0.12-0.20 2.8 ±0.15 0.8±0.1 3.7 ±0.15 Dimensions in millimeters SOD-1 23FL 1.4 2.85 1.2 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOD-123FL SOD-123FL 50 1.969 High Diode Semiconductor 4