ES5J

ES5A THRU ES5J SMBG Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io 5A SMBG ●VRRM 50V-600V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● ES5X X : From A To J ES5 Item Symbol Unit Repetitive Peak Reverse Voltage VRRM Maximum RMS Voltage Test Conditions A B V 50 100 VRMS V 35 70 Average Forward Current IF(AV) A 60Hz Half-sine wave, Resistance load, Ta=75℃ 5.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 150 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Junction Temperature Storage Temperature C D F G H J 150 200 300 400 105 140 210 280 350 420 500 600 Electrical Characteristics (T=25℃ Unless otherwise specified) Item Unit Peak Forward Voltage VF V IF =5.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A,Irr=0.25A 35 Ta =25℃ 10 Ta =100℃ 500 Peak Reverse Current Thermal Resistance(Typical) IRRM1 IRRM2 μA RθJ-A Test Condition ES5 Symbol VRM=VRRM A B C D F 0.95 G 1.25 Between junction and ambient 50 Between junction and terminal 15 H J 1.7 ℃/W RθJ-L Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)er copper pad areas High Diode Semiconductor 1 FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1 : FORWARD CURRENT DERATING CURVE 5.0 IFSM(A) ︶ IO(A Typical Characteristics 175 150 4.0 8.3ms Single Half Sine Wave JEDEC Method 3.0 100 2.0 S 0 . 1 1.0 0 0 0 1 0 50 ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length 50 0 150 Ta(℃) 1 2 10 IR(uA) IF(A) ES5A-ES5D ES5F-ES5G 100 FIG.4:TYPICAL REVERSE CHARACTERISTICS 1000 100 4.0 ES5H-ES5J 2.0 Tj=125℃ 10 1.0 0.4 Tj=100℃ 1.0 0.2 0.1 Tj=25℃ TJ=25℃ Pulse width=300us 1% Duty Cycle 0.02 0.01 0.6 20 Number of Cycles TYPICAL FORWARD CHARACTERISTICS 20 10 0.8 1.0 1.2 1.4 1.6 1.8 0.1 0.01 0 2.0 20 40 60 80 100 Voltage(%) VF(V) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 SMBG 0.155(3.94) 0.130(3.30) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.012(0.305) 0.006(0.152) 0.096(2.44) 0.084(2.13) 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX. 0.220(5.59) 0.205(5.21) Dimensions in inches and (millimeters) SMBG 4.26 1.8 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SMBG FIG : CONFIGURATION OF SURFACE MOUNTED DEVICES TAPING SMBG 75 1.0 2.95 0.039 High Diode Semiconductor 4