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WS726052M-8/TR

WS726052M-8/TR

  • 厂商:

    WILLSEMI(韦尔)

  • 封装:

    MSOP-8

  • 描述:

    高精度运算放大器

  • 详情介绍
  • 数据手册
  • 价格&库存
WS726052M-8/TR 数据手册
WS726052 WS726052 High Precision, Low Noise Operational Amplifiers Http://www.omnivision-group.com Descriptions The WS726052 a dual high output drive CMOS operational amplifiers featured a peak output current of 350mA, and rail-to-rail output capability from a single 2.5V to 5.5V supply. This amplifier exhibits a high slew MSOP-8L DFN2x2-8 rate of 6V/μs and a gain-bandwidth product (GBP) of 11.5MHz. The WS726052 can drive typical headset levels (32Ω), as well as bias an RF power amplifier in wireless handset applications. The WS726052 is available with MSL 3 Level in MSOP-8L package and MSL 2 Level in DFN2x2-8 package. Standard products are Pb-Free and MSOP-8L halogen-Free. Pin configuration (Top view) Applications  RF Power Amplifier Biasing Controls  Portable/Battery-Powered Audio Applications  Portable Headphone Speaker Drivers (32Ω)  Audio Hands-Free Car Phones (Kits)  Laptop/Notebook Computers/TFT Panels  Set-Top Boxes  Digital-to-Analog Converter Buffers  Transformer/Line Drivers MSOP-8L 350mA Output Drive Capability  Low Input Offset Voltage: 5μV (MAX)  Low Noise: 40nV/ Hz at 1kHz  300mA Current Limitation  Over-Temperature Protection  Supply Voltage Range: 2.5V to 5.5V  Supply Current: 0.95mA/Amplifier (TYP)  Gain-Bandwidth Product: 11.5MHz  High Slew Rate: 6V/μs  Voltage Gain (RL = 2kΩ): 140dB  Power Supply Rejection Ratio: 135dB  No Phase Reversal for Over-Driven Inputs  Unity-Gain Stable for Capacitive Loads to DFN2x2-8 Marking Features  DFN2x2-8 6052 = Device code GM = Special code GD = Special code Y = Year code W = Week code Order Information Device Package Shipping WS726052M-8/TR MSOP-8L 4000/Reel &Tape WS726052D-8/TR DFN2x2-8 3000/Reel &Tape 780pF Will Semiconductor Ltd. 1 2021/11/2 – Rev. 1.1 WS726052 Pin Descriptions Pin Number Symbol Descriptions 1 OUTA 2 -INA Inverting input of Channel A 3 +INA Non-inverting input of Channel A 4 V- 5 +INB Non-inverting input of Channel B 6 -INB Inverting input of Channel B 7 OUTB 8 V+ Output of Channel A Negative supply Output of Channel B Positive supply Absolute Maximum Ratings Parameter Symbol Value Unit Supply Voltage, ([V+] - [V-]) VS(2) 5.5 V Operating Supply Voltage Range VIDR 2.5 to 5.5 V All Other Pins VICR (V-)-0.3 to (V+)+0.3 V TA -40 to 125 °C Storage Temperature Range TSTG -65 to 150 ° Junction Temperature Range TJ 150 ° Lead Temperature Range TL 260 ° Operating Fee-Air Temperature Range C C C Note: 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are only stress ratings, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions are not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. All voltage values, except differential voltage are with respect to network terminal. ESD, Electrostatic Discharge Protection Symbol Parameter Condition MIL-STD-883H Method 3015.8 Minimum level Unit ±8000 V HBM Human Body Model ESD MM Machine Model ESD JEDEC-EIA/JESD22-A115 ±400 V Charged Device Model ESD JEDEC-EIA/JESD22-C101E ±2000 V CDM JEDEC-EIA/JESD22-A114A Note: This integrated circuit can be damaged by ESD if you don’t pay attention to ESD protection. Will Semiconductor Ltd. recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Will Semiconductor Ltd. 2 2021/11/2 – Rev. 1.1 WS726052 Electronics Characteristics The *denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C, VS = 5V, VCM = VOUT = VS/2, Rload = 2kΩ, Cload = 20pF. Symbol PARAMETER CONDITIONS MIN TYP MAX UNITS 1 5 μV (V+) + 0.1 V INPUT CHARACTERISTICS VOS VCM CMRR AOL Input Offset Voltage Input Common Mode (V-) - 0.1 Voltage Range Common Mode Rejection Ratio Open-Loop Voltage Gain (V-) - 0.1V < VCM < (V+) + 0.1V (V-) + 0.1V < VOUT < (V+) - 0.1V, Rload = 2kΩ 120 135 dB 120 140 dB OUTPUT CHARACTERISTICS VOH VOL ISC+ ISC- Output Voltage Swing from Rail to V+ Output Voltage Swing from Rail to V- Rload = 150Ω 72 85 mV Rload = 150Ω 112 125 mV Output Short-Circuit Current to V+ Output Short-Circuit Current to V- 315 342 275 295 mA POWER SUPPLY VS Specified Voltage Range IQ Quiescent Current/Amplifier PSRR Power Supply Rejection Ratio 2.5 IOUT = 0 V+ = 2.5V to 5.5V, VCM =V+/2V 827 120 5.5 V 1300 μA 135 dB DYNAMIC PERFORMANCE Gain-Bandwidth Product Slew Rate G = +100, Cload = 20pF 11.5 MHz G = +1, VOUT = 2VP-P 6 V/μs f = 0.1Hz to 10Hz 0.8 μVP-P f = 1kHz 40 f = 10kHz 8 NOISE Input Voltage Noise Input Voltage Noise Density nV/√Hz Note: 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. 2. A heat sink may be required to keep the junction temperature below the absolute maximum rating when the output is shorted indefinitely. Will Semiconductor Ltd. 3 2021/11/2 – Rev. 1.1 WS726052 Typical Characteristics At TA=25°C, VS=±2.5V, VCM=0V, Rload = 2kΩ, Cload = 20pF, unless otherwise noted. Small - signal Step Response, 100mV Step Large - Signal Step Response, 2V Step Over Shoot Voltage Large-Signal Step Response2, 2V Step Open-Loop Gain Open-Loop Gain and Phase Will Semiconductor Ltd. 4 2021/11/2 – Rev. 1.1 WS726052 Typical Characteristics (continued) TA=25°C, VS=±2.5V, VCM=0V, Rload = 2kΩ, Cload = 20pF, unless otherwise noted. CMRR PSRR Input Noise Voltage 0.1Hz to 10Hz Output-Nosie Output Voltage Swing Input Offset Voltage vs Temperature Will Semiconductor Ltd. 5 2021/11/2 – Rev. 1.1 WS726052 Typical Characteristics (continued) TA=25°C, VS=±2.5V, VCM=0V, Rload = 2kΩ, Cload = 20pF, unless otherwise noted. High Output Voltage vs Temperature Low Output Voltage vs Temperature Slew Rate rising vs Temperature Slew Rate falling vs Temperature Total Supply Current vs Temperature Will Semiconductor Ltd. 6 2021/11/2 – Rev. 1.1 WS726052 PACKAGE OUTLINE DIMENSIONS MSOP-8L D e c E E1 L b θ TOP VIEW A A2 A1 SIDE VIEW SIDE VIEW Symbol Dimensions In Millimeters (mm) Min. Typ. Max. A - - 1.10 A1 0.02 - 0.15 A2 0.75 0.80 0.95 b 0.25 - 0.38 c 0.09 - 0.23 D 2.90 3.00 3.10 E 4.75 4.90 5.05 E1 2.90 3.00 3.10 e 0.65 BSC L 0.40 - 0.80 θ 0° - 6° Will Semiconductor Ltd. 7 2021/11/2 – Rev. 1.1 WS726052 TAPE AND REEL INFORMATION MSOP-8L Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 8 Q4 2021/11/2 – Rev. 1.1 WS726052 PACKAGE OUTLINE DIMENSIONS DFN2×2-8 Symbol Dimensions In Millimeters (mm) Min. Typ. Max. A 0.70 0.75 0.80 A1 0.00 0.02 0.05 A3 - 0.20 REF - b 0.19 0.24 0.29 D 2.00 BSC E 2.00 BSC D2 0.75 0.80 0.85 E2 1.25 1.30 1.35 e 0.50 BSC L 0.30 0.35 0.40 k 0.20 - - Will Semiconductor Ltd. 9 2021/11/2 – Rev. 1.1 WS726052 TAPE AND REEL INFORMATION DFN2×2-8 Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 10 Q4 2021/11/2 – Rev. 1.1
WS726052M-8/TR
物料型号为 WS726052,是一款高精度、低噪声的双路 CMOS 运算放大器,具有高达 350mA 的峰值输出电流和轨到轨输出能力。

它适用于从单 2.5V 到 5.5V 的电源电压范围,具有 6V/μs 的高转换速率和 11.5MHz 的增益带宽积。


器件简介: WS726052 可以驱动典型耳机水平(32Ω),也可以在无线手持设备应用中偏置射频功率放大器。


引脚分配: - MSOP-8L 封装:OUTA, -INA, +INA, V-, +INB, -INB, OUTB, V+ - DFN2x2-8 封装:OUTA, -INA, +INA, V-, +INB, -INB, OUTB, V+

参数特性: - 输出驱动能力:350mA - 输入偏置电压:低至 5μV(最大值) - 噪声:在 1kHz 时为 40nV/Hz - 电流限制:300mA - 过温保护 - 电源电压范围:2.5V 至 5.5V - 电源电流:0.95mA/放大器(典型值) - 增益带宽积:11.5MHz - 高转换速率:6V/μs - 电压增益(RL = 2kΩ):140dB - 电源抑制比:135dB

功能详解: WS726052 具有高输出驱动能力,低输入偏置电压,低噪声,以及过温保护等特性。

它还具有电源电压范围宽,电源电流低,增益带宽积高,转换速率高等特点。


应用信息: - 射频功率放大器偏置控制 - 便携式/电池供电音频应用 - 便携式耳机扬声器驱动(32Ω) - 音频免提车载电话(套件) - 笔记本电脑/笔记本电脑/TFT 面板 - 机顶盒 - 数字至模拟转换器缓冲器 - 变压器/线驱动

封装信息: - MSOP-8L 和 DFN2x2-8 两种封装形式 - 标准产品无铅和无卤

订购信息: - WS726052M-8/TR(MSOP-8L 封装):4000/卷 & 带 - WS726052D-8/TR(DFN2x2-8 封装):3000/卷 & 带

绝对最大额定值和静电放电保护等详细信息也在文档中提供。
WS726052M-8/TR 价格&库存

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WS726052M-8/TR
  •  国内价格
  • 1+1.80360
  • 10+1.51200
  • 30+1.36080
  • 100+1.22040
  • 500+1.13400
  • 1000+1.08000

库存:3121