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2SC5200

2SC5200

  • 厂商:

    MINOS

  • 封装:

    TO-3PL

  • 描述:

    晶体管类型:NPN;集射极击穿电压(Vceo):230V;集电极电流(Ic):15A;功率(Pd):150W;集电极截止电流(Icbo):5uA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib)...

  • 数据手册
  • 价格&库存
2SC5200 数据手册
Minos High Power Products Features: ① ② ③ ④ NPN TRANSISTORS Power Amplifier Applications Complementary to 2SA1943 High collector voltage:VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. MINOS TO-3PL Absolute Maximum Ratings(Tc=25℃) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Tc=25℃ Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Rating 230 Unit V 230 7 17 3 180 V V A A Tj TSTG 150 -55~150 W ℃ ℃ Package Marking And Ordering Information: Ordering Codes 2SC5200 Package TO-3PL Product Code 5200 www.mns-kx.com Packing Tube Electrical CharacteristicsTc=(25℃) Test Condition Characteristics Collector cut-off current Emitter cut-off current Dc current gain Symbol ICBO IEBO hFE VCB=230V; VEB=7V; IC=5A; Collector-emitter saturation voltage Transition frequency VCE(sat) fT IC=4A; VCE=10V; Symbol Paramter RθJC Junction-to-Case Min IE=0 Ic=0 VCE=4V; 70 IB=0.4A ICE=500mA ;f=1MHZ Typ 0.68 TYPICAL CHARACTERISTICS HFE--IC DC current gain HFE VCE=5V Collector current IC (A) www.mns-kx.com Typ 58 Max Unit 500 500 140 uA uA 0.5 V MHZ Units ℃/W Package Information TO-3PL PACKAGE www.mns-kx.com NOTE: 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of the device when circuit designing. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to change withoutprior notice. CONTACT: 深圳市迈诺斯科技有限公司(总部) 地址:深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C 邮编:518025 电话:0755-83273777 www.mns-kx.com
2SC5200 价格&库存

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