RCLAMP0521P-N

RCLAMP0521P-N Features Description  Ultra small package: 1.0x0.6x0.5mm  Ultra low capacitance: 0.3pF typical  Ultra low leakage: nA level  Low operating voltage: 5V  Low clamping voltage  2-pin leadless package The RCLAMP0521P-N is a bi-directional TVS di-ode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for pro-tecting voltage sensitive highspeed data lines. The RCLAMP0521P-N has an ultra-low capacitance with a typical value at 0.3 pF, and complies with the IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV contact discharge. It is assembled into an ultra-small 1.0x0.6x0.5mm lead-free DFN package. The small size, ultra-low capacitance and high ESD surge protection make RCLAMP0521P-N an ideal choice to pro-tect cell phone, digital video interfaces and other high speed ports.  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±20kV Contact discharge: ±15kV – IEC61000-4-5 (Lightning) 3.8A (8/20μs)  RoHS Compliant Circuit Diagram Marking Diagram Applications  Smart phones  Display Ports  MDDI Ports  USB Ports  Digital Video Interface (DVI)  PCI Express and Serial SATA Ports Ordering Information Part Number Packaging RCLAMP0521P-N 10000/Tape & Reel Reel Size 7 inch Transparent top view 21:Device Marking Code 0571-87006810 www.dowosemi.cn 1／4 RCLAMP0521P-N Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 70 W Peak Pulse Current (8/20µs) IPP 3.8 A ESD per IEC 61000−4−2 (Air) ±20 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±15 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Test Condition Min Typ VRWM VBR IT = 1mA 6.0 7.5 Max Unit 5.0 V 8.5 V 0.2 µA Reverse Leakage Current IR VRWM = 5.0V Clamping Voltage VC IPP = 1A (8 x 20µs pulse) 10 12 V Clamping Voltage VC IPP = 3.8A (8 x 20µs pulse) 17 20 V Junction Capacitance CJ VR = 0V, f = 1MHz 0.3 0.45 pF Portion Electronics Parameter Symbol Parameter IT Test Current IPP Maximum Reverse Peak Pulse Current Vc Clamping Voltage @Ic 0571-87006810 www.dowosemi.cn 2／4 RCLAMP0521P-N Typical Performance Characteristics (TA=25°C unless otherwise Specified) 30 Vc-Clamping Voltage(V) CJ-Junction Capacitance (pF) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 25 20 15 10 5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 VR—Reverse Voltage(V) 1 2 3 4 Ipp-Peak Pulse Current(A) Clamping Voltage vs. Peak Pulse Current Junction Capacitance vs. Reverse Voltage Peak Power_Ppp(kW) 10 Voltage (V) 1 0.1 -20 0.01 0.1 1 10 0 20 100 120 120 100 100 80 60 40 20 0 50 75 100 125 150 Ambient Temperature_Ta(℃) 100 80 60 40 20 0 -20 -20 0 20 40 T-Time(us) 8 X 20us Pulse Waveform Power Derating Curve 0571-87006810 80 IEC61000−4−2 Pulse Waveform Ipp-Peak Pulse Current-%of Ipp % of Rated Power Peak Pulse Power vs. Pulse Time 25 60 Time (nS) Pulse Duration_tp(uS) 0 40 www.dowosemi.cn 3／4 60 RCLAMP0521P-N DFN1006-2 Package Outline Drawing e D h h - b E - L A1 c A Bottom View A DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.40 0.42 0.45 0.016 0.018 0.020 A1 0.00 0.02 0.055 0.000 0.001 0.002 b 0.45 0.50 0.55 0.018 0.020 0.022 c 0.12 0.15 0.18 0.005 0.006 0.007 D 0.99 1.02 1.05 0.039 0.040 0.041 SYM e 0.65 BSC 0.026 BSC E 0.59 0.62 0.65 0.023 0.024 0.026 L 0.20 0.25 0.30 0.008 0.010 0.012 h 0.07 0.12 0.17 0.003 0.005 0.007 Suggested Land Pattern ╋ Y3 Y2 SYM Y1 Z ╋ DIMENSIONS MILLIMETERS INCHES X 0.60 0.024 Y1 0.50 0.020 Y2 0.30 0.012 Y3 0.80 0.032 Z 1.30 0.052 X 0571-87006810 www.dowosemi.cn 4／4