T1635-800G-TR(TOKMAS)

36002dc8-79707dfb-44420c97-fd56264f High temperature 16 A Triacs T1635-800G-TR Main features Symbol Value Unit IT(RMS) 16 A VDRM/VRRM 800 V IGT (Q1) 35 mA A2 G T1635 A1 A2 D2PAK www.tokmas.com BTA16-600B 1 2 3 TO-220B 36002dc8-79707dfb-44420c97-fd56264f High temperature 16 A Triacs 1 Characteristics Table 1. Absolute maximum ratings Symbol IT(RMS) Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle sine wave, Tj initial = 25° C) ITSM I2t Unit Tc = 130° C 16 A F = 60 Hz t = 16.7 ms 170 F = 50 Hz t = 20 ms 160 D2PAK IGM Non repetitive surge peak off state voltage Peak gate current PG(AV) F = 120 Hz tp = 20 µs Average gate power dissipation Tstg Tj A 2S Tj = 150° C 50 A/µs Tj = 25° C 800 V Tj = 150° C 4 A Tj = 150° C 1 W -40 to +150 -40 to +150 °C Storage junction temperature range Operating junction temperature range Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified) Symbol IGT (1) VGT VGD Test conditions VD = 12 V, RL = 33 Ω VD = VDRM, RL =3.3 kΩ (2) Quadrant Value MAX 35 mA II - III MAX 1.3 V II - III MIN 0.15 V MAX 35 mA 50 mA I - III IG = 1.2 x IGT dV/dt (2) (2) Unit II - III IT = 100 mA IL (dI/dt)c A 100 tp = 10 ms Critical rate of rise of on-state current IG = 2xIGT, tr ≤100 ns VDSM/VRSM IH Value I2t Value for fusing dI/dt T1635-800G-TR MAX II 80 VD = 67% VDRM, gate open, Tj = 150° C MIN 300 V/µs Without snubber, Tj = 150° C MIN 7.1 A/ms 1. minimum IGT is guaranteed at 5% of IGT max 2. for both polarities of A2 referenced to A1 www.tokmas.com 36002dc8-79707dfb-44420c97-fd56264f High temperature 16 A Triacs Table 3. T1635-800G-TR Static electrical characteristics Symbol VTM (1) Test conditions Unit Tj = 25° C MAX 1.5 V VTO (1) Tj = 150° C MAX 0.80 V RD (1) Tj = 150° C MAX 23 mΩ 5 µA IDRM IRRM ITM= 22.5 A, tp = 380 µs Value Tj = 25° C VDRM = VRRM Tj = 150° C VD/VR = 400 V (at peak mains voltage) MAX 6.4 Tj = 150° C mA 4.2 1. for both polarities of A2 referenced to A1 Table 4. Thermal resistance Symbol Rth (j-c) Parameter Value D2PAK Junction to case (AC) Unit 1.2 °C/W Rth (j-a) Figure 1. 18 Junction to ambient 45 Maximum power dissipation Figure 2. vs RMS on-state current (full cycle) P(W) 18 IT(RMS) (A) TO-220AB/D²PAK α=180 ° 16 RMS on-state current vs case temperature (full cycle) 16 14 14 12 12 10 10 8 8 6 6 4 4 180° 2 TO-220AB Insulated 2 IT(RMS)(A) 0 α=180 ° TC(°C) 0 0 2 4 6 8 10 12 14 16 0 25 www.tokmas.com 50 75 100 125 150 36002dc8-79707dfb-44420c97-fd56264f High temperature 16 A Triacs Figure 3. 4.5 RMS on-state current vs ambient Figure 4. temperature, PCB FR4, eCU = 35 µm IT(RMS) (A) 1.E+00 Relative variation of thermal impedance vs pulse duration K=[Zth/Rth] α=180 ° D²PAK SCU=1 cm² 4.0 T1635-800G-TR Zth(j-c) 3.5 3.0 1.E-01 Zth(j-a) 2.5 2.0 1.E-02 1.5 1.0 0.5 Tamb(°C) tP(s) 0.0 0 25 Figure 5. 2.5 50 75 100 125 150 Relative variation of gate trigger current, holding current and latching current vs junction temperature (typical values) 1.E-03 1.E-03 1.E-02 Figure 6. IGT, IH, IL [T j] / IGT, IH, IL [T j=25°C] 180 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Surge peak on-state current vs number of cycles ITSM (A) 160 IGT 2.0 140 t=20ms Non repetitive Tj initial=25 °C One cycle 120 1.5 100 IH & IL 80 Repetitive Tc=113 °C 1.0 60 40 0.5 20 Tj(°C) 0.0 Number of cycles 0 -40 -20 0 Figure 7. 10000 20 40 60 80 100 120 140 160 1 10 Figure 8. Non repetitive surge peak on-state current (sinusoidal pulse width tp