SM4307PSKC-TRG

SM4307PSK ® P-Channel Enhancement Mode MOSFET Pin Description Features D · -30V/-11A, RDS(ON) = 18mW(max.) @ VGS =-10V RDS(ON) = 30mW(max.) @ VGS =-4.5V S · Reliable and Rugged · Lead Free and Green Devices Available S D G ( 5,6,7,8 ) D DDD Applications (4) G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S S S (1, 2, 3) Ordering and Marking Information P-Channel MOSFET Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500pcs/reel) Assembly Material G : Halogen and Lead Free Device SM4307PS Assembly Material Handling Code Temperature Range Package Code SM4307PS K : D Top View of SOP-8 (RoHS Compliant) · S D 4307 XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 1 www.sinopowersemi.com SM4307PSK ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 TA=25°C -11 TA=70°C -8.5 IDa Continuous Drain Current (VGS=-10V) a DM 300ms Pulsed Drain Current (V GS=-10V) -44 I IS a I AS Diode Continuous Forward Current -3 b Avalanche Current, Single pulse (L=0.3mH) -20 b Avalanche Energy, Single pulse (L=0.3mH) 60 Maximum Junction Temperature 150 EAS TJ TSTG Storage Temperature Range P Da Maximum Power Dissipation RqJAa,c R qJL Unit V A mJ °C -55 to 150 Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Lead TA=25°C 3.1 TA=70°C 2 t £ 10s 40 Steady State 75 Steady State 24 W °C/W 2 Note a：Surface Mounted on 1in pad area, t £ 10sec. Note b：UIS tested and pulse width limited by maximum junction temperature 150o C (initial temperature Tj=25 oC). Note c：Maximum under Steady State conditions is 75 °C/W. Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Conditions SM4307PSK Unit Min. Typ. Max. -30 - - - - -1 - - -30 -1.5 -2 -2.5 V nA Static Characteristics BVDSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current VGS(th) IGSS V GS=0V, IDS=-250mA V DS=-24V, VGS=0V TJ=85°C Gate Threshold Voltage V DS=VGS, IDS =-250mA Gate Leakage Current V GS=±25V, VDS=0V - - ±100 V GS=-10V, I DS=-11A - 14 18 V GS=-4.5V, IDS =-4A - 22 30 RDS(ON) d Drain-Source On-state Resistance V mA mW Diode Characteristics VSD trr d Diode Forward Voltage I SD=-1A, VGS=0V - -0.7 -1 V e Reverse Recovery Time 19 - ns Reverse Recovery Charge I SD=-11A, di SD /dt=100A/ms - e - 10 - nC Qrr Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 2 www.sinopowersemi.com SM4307PSK ® Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics Test Conditions SM4307PSK Min. Typ. Max. - 3 - - 1000 - - 210 - - 150 - - 8 - - 12 - - 32 - - 16 - - 21 - - 2.6 - - 6.2 - Unit e Rg Gate Resistance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance t d(ON) Turn-on Delay Time VGS =0V, VDS =0V,F=1MHz tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf (TA = 25°C Unless Otherwise Noted) VGS =0V, VDS=-15V, Frequency=1.0MHz VDD=-15V, RL=15W, IDS=-1A, VGEN=-10V, RG=6W Turn-off Fall Time Gate Charge Characteristics W pF ns e Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-11A nC Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 3 www.sinopowersemi.com SM4307PSK ® Typical Operating Characteristics Power Dissipation Drain Current 3.5 12 3.0 10 -ID - Drain Current (A) Ptot - Power (W) 2.5 2.0 1.5 1.0 8 6 4 2 0.5 o TA=25 C,VG=-10V o 0.0 T A=25 C 0 20 40 60 80 0 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 300 Normalized Transient Thermal Resistance 2 Rd s( on )L im it 100 -ID - Drain Current (A) 0 10 300ms 1ms 1 10ms 100ms 1s DC 0.1 o TA=25 C 0.01 0.01 0.1 1 10 100 300 -VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 Mounted on 1in pad o RqJA : 40 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM4307PSK ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 45 50 40 RDS(ON) - On - Resistance (mW) -8,-9,-10V 35 -ID - Drain Current (A) 45 VGS= -4.5,-5,-6,-7, -4V 30 25 20 -3.5V 15 10 -3V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS=-4.5V 30 25 20 VGS=-10V 15 10 0 3.0 0 10 20 30 40 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=-11A 50 IDS=-250mA 1.4 Normalized Threshold Voltage 60 RDS(ON) - On Resistance (mW) 35 5 70 50 40 30 20 10 0 40 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 10 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 1.2 5 www.sinopowersemi.com SM4307PSK ® Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 50 2.00 VGS = -10V IDS = -11A 1.50 -IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 10 o Tj=150 C o T j=25 C 1 0.25 o 0.00 -50 -25 RON@Tj=25 C: 14mW 0 25 50 0.1 0.0 100 125 150 0.2 0.4 1.2 1.4 Gate Charge 8 -VGS - Gate - source Voltage (V) 1200 1050 Ciss 900 750 600 450 300 Coss Crss 1.6 10 VDS=-15V 9 I =-11A DS 0 1.0 Capacitance 1350 0 0.8 -VSD - Source - Drain Voltage (V) Frequency=1MHz 150 0.6 Tj - Junction Temperature (°C) 1500 C - Capacitance (pF) 75 7 6 5 4 3 2 1 5 10 15 20 25 0 0 30 -VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 3 6 9 12 15 18 21 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM4307PSK ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01W tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT RG td(off) tf VGS 10% VGS VDD tp 90% VDS Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 7 www.sinopowersemi.com SM4307PSK ® Package Information SOP-8 -T- SEATING PLANE < 4 mils D E E1 SEE VIEW A h X 45 ° A1 A A2 c 0.25 b e GAUGE PLANE SEATING PLANE L VIEW A S Y M B O L A MILLIMETERS MIN. 0.10 A2 1.25 b 0.31 D E E1 INCHES MAX. MIN. MAX. 1.75 A1 c RECOMMENDED LAND PATTERN 1.27 SOP-8 0.25 0.069 0.004 0.010 0.049 0.51 0.012 0.020 0.17 0.25 0.007 0.010 4.80 5.00 0.189 0.197 5.80 6.20 0.228 0.244 3.80 4.00 0.150 0.157 e 1.27 BSC 2.2 5.74 2.87 0.050 BSC h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 0 0° 8° 0° 8° Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 8 0.635 0.8 UNIT: mm www.sinopowersemi.com SM4307PSK ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 B A OD1 B T SECTION A-A SECTION B-B H A d T1 Application SOP-8 A 330.0± 2.00 H T1 C d D W E1 F 12.4+2.00 13.0+0.50 -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05 50 MIN. P0 P1 P2 4.0±0.10 8.0±0.10 2.0±0.05 D0 1.5+0.10 -0.00 D1 1.5 MIN. T A0 B0 K0 0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20 -0.40 (mm) Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 9 www.sinopowersemi.com SM4307PSK ® Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile Copyright ã Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 10 www.sinopowersemi.com SM4307PSK ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness