SE30P12D

SE30P12D P-Channel Enhancement-Mode MOSFET Revision: A Features General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline  Surface Mount Device For a single MOSFET VDS = -30V RDS(ON) = 11.5mΩ @ VGS=-10V RDS(ON) = 18mΩ @ VGS=-4.5V    Pin configurations See Diagram below D S D S D S D G D G S Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID -12 -50 A PD 2 W TJ -55 to 150 ℃ 1. SE30P12D Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ -30 -33 Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=-250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= -24V, VGS=0V IGSS Gate-Body Leakage Current VGS= 20V Gate Threshold Voltage VDS= VGS, ID=-250μA -1 VGS=-10V, ID=-10A - VGS(th) RDS(ON) Static Drain-Source On-Resistance 2 VGS=-4.5V, ID=-7A V -5 μA 100 nA -1.5 -3 V 11.5 15 mΩ 18 25 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V, f=1MHz 5270 pF 945 pF 745 pF 100 nC 14.5 nC 23 nC 14 ns 76.5 ns SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=-10V, VDS=-15V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=-10V, VDS=-15V, td(off) Turn-Off Delay Time RGEN=3Ω, RL=1Ω td(r) Turn-On Rise Time 16.5 ns td(f) Turn-Off Fall Time 37.5 ns ID=-15A Thermal Resistance Symbol RθJA Parameter Typ Max Units Junction to Ambient (t≦10s) 26 40 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 2. SE30P12D Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE30P12D Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE30P12D Package Outline Dimension DFN3X3 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 5.