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ESD7951ST5G

ESD7951ST5G

  • 厂商:

    BORN(伯恩)

  • 封装:

    DFN1006

  • 描述:

    极性:双向;反向截止电压(Vrwm):5V;击穿电压(VBR):6V;钳位电压(Vc)@Ipp:15V;

  • 数据手册
  • 价格&库存
ESD7951ST5G 数据手册
ESD7951ST5G ESD Protection Diode »Features ■ 60Watts peak pulse power (tp = 8/20μs) ■ Tiny DFN1006 package ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=0.6pF typ. IO to IO) ■ Protection one data/power line ■ IEC 61000-4-2 ±20kV contact ±20kV air ■ IEC 61000-4-4 (EFT) 40A (5/50ns) ■ IEC 61000-4-5 (Lightning) 3.5A (8/20μs) »Applications »Mechanical Data ■ Cell Phone Handsets and Accessories ■ DFN1006 package ■ Microprocessor based equipment ■ Molding compound flammability rating: UL 94V-0 ■ Personal Digital Assistants (PDA’s) ■ Packaging: Tape and Reel ■ Notebooks, Desktops, and Servers ■ RoHS/WEEE Compliant ■ Portable Instrumentation »Schematic & PIN Configuration DFN1006 Revision 2018 www.born-tw.com 1/4 ESD7951ST5G »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 60 Watts Peak Pulse Current ( tp =8/20μs )(note1) Ipp 3.5 A VESD 20 20 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Reverse Breakdown Voltage Conditions Min Typical VRWM VBR IT=1mA Reverse Leakage Current IR VRWM=5V,T=25℃ Peak Pulse Current IPP Clamping Voltage Junction Capacitance 6.0 Max Units 5.0 V 8.0 V 0.1 0.5 μA tp =8/20μs 3.5 A VC IPP=3.5A,tp=8/20μs 15 V Cj IO to IO VR = 0V, f = 1MHz 0.9 pF 0.5 »Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ V RWM VC V BR V RWM IT IR ITIR VRWM V BR V C V Breakdown Voltage @ IT Test Current IPP Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/4 ESD7951ST5G »Typical Characteristics Figure 2: Power Derating Curve 110 10 Percent of Rated Power for Ipp P pp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 1 60w 8/20µswaveform 0.1 0.01 1 0.1 10 100 100 90 80 70 60 50 40 30 20 10 0 1,000 0 25 td – Pulse Duration - µs Figure3: Pulse Waveform Percent Ipp 80 e-1 50 40 td=Ipp/2 20 150 16 14 12 Test Waveform Paramters tr=8µs td=20µs 10 8 6 4 10 0 2 0 IPP (A) 125 18 Clamping Voltage–VC (V) 90 30 100 20 Waveform Paramters tr=8µs td=20µs 100 60 75 Figure 4: Clamping Voltage vs.Ipp 110 70 50 Ambient Temperature - TA (℃) 5 10 15 Time (µs) 20 25 30 0 1 2 3 4 5 6 Peak Pulse Current–IPP (A) Figure5: Positive Clamping voltage (TLP) Figure5: Negative Clamping voltage (TLP) 35 0 30 5 25 10 20 IPP (A) Rdyn = 0.55 Ω 20 15 Rdyn = 0.55 Ω 10 25 30 5 0 -0.5 15 35 4.5 9.5 14.5 19.5 24.5 -24.5 VCL (V) Revision 2018 www.born-tw.com -19.5 -14.5 -9.5 -4.5 0.5 VCL (V) 3/4 ESD7951ST5G »Outline Drawing – DFN1006 »Ordering information Order code ESD7951ST5G Revision 2018 Package DFN1006 Base qty 10k www.born-tw.com Delivery mode Tape and reel 4/4
ESD7951ST5G 价格&库存

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ESD7951ST5G
  •  国内价格
  • 1+0.15101
  • 100+0.14101
  • 300+0.13101
  • 500+0.12101
  • 2000+0.11601
  • 5000+0.11301

库存:9150