AO3402

AO3402 SOT-23 Plastic-Encapsulate MOSFETS 30V N-Channel MOSFET V(BR)DSS 28 mΩ@10V  30V SOT-23 ID RDS(on)MAX 3 5A  34 mΩ@4.5V 1. GATE 2. SOURCE 1 3. DRAIN Features Lead free product is acquired Surface mount package 2 Equivalent circuit MARKING D A29T G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 7' Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 178 3000 203×203×195 45000 Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±16 TA=25℃ Continuous Drain Current Maximum Power Dissipation 2) Pulsed Drain Current 1) Operating Junction and Storage Temperature Range Thermal Resistance Junction-Ambient TA=70℃ TA=25℃ TA=70℃ V 5.0 ID A 4 1.5 PD W 0.9 IDM TJ, Tstg Unit A 20.4 o -50 to 150 RθJA 80 C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T19C31A0 http://www.microdiode.com Rev:2019A0 Page :1 AO3402 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Symbol Parameter Test Condition Min. Typ. Miax. Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage BVDSS 1) RDS(on) VGS(th) VGS = 0V, ID = 250uA V 30 VGS = 10V, ID = 4.0A 28 36 VGS = 4.5V, ID = 3.0A 34 50 VGS = 2.5V, ID = 1.0A 55 80 0.8 1.2 V VDS =VGS, ID = 250uA 0.5 mΩ Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA Gate Body Leakage IGSS VGS=±16V, VDS=0V 100 nA gfs VDS =15V, ID = 4A Forward Transconductance 1) S 8 Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Source drain current(Body Diode) ISD Diode Forward Voltage VSD 1) VDS = 15V, ID = 4A VGS = 4.5V 3.1 nC 0.4 1.3 4.4 VDD = 15V, RG=3.3 Ω 2.6 ID =1A,VGS = 10V 25.5 ns 3.3 VDS = 15V, VGS = 0V f = 1.0 MHz IS = 4.0A, VGS = 0V 240 pF 35 30 0.85 1.8 A 1.2 V Pulse test : Pulse width≤300µs, duty cycle≤2%. http://www.microdiode.com Rev:2019A0 Page :2 AO3402 ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig2. Normalized Threshold Voltage Vs. Temperature Rdson, On -Resistance (mΩ)) ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) VGS, Gate -Source Voltage (V) ID , Drain Current (A) Fig4. On-Resistance vs. Drain Current and Gate -ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage http://www.microdiode.com VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Rev:2019A0 Page :3 AO3402 C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms The curve above is for reference only. http://www.microdiode.com Rev:2019A0 Page :4 AO3402 Outlitne Drawing SOT-23 Package Outline Dimensions 1 e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 θ Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 https://www.microdiode.com inches mm Rev:2019A0 Page :5