P-1
HGB041N15S
150V N-Ch Power MOSFET
Feature
◇ High Speed Power Smooth Switching
◇ Enhanced Body diode dv/dt capability
◇ Enhanced Avalanche Ruggedness
◇ 100% UIS Tested, 100% Rg Tested
◇ Lead Free
150 V
VDS
TO-263-7
3.8 mW
RDS(on),typ
213
A
ID (Sillicon Limited)
Application
◇ Synchronous Rectification in SMPS
◇ Hard Switching and High Speed Circuit
◇ Power Tools
◇ UPS
◇ Motor Control
TO-263-7
Drain
Pin4
Gate
Pin 1
Part Number
HGB041N15S
Package
Marking
TO-263-7 GB041N15S
Src
Pin2,3,5,6,7
Absolute Maximum Ratings at T j=25℃ (unless otherwise specified)
Parameter
Continuous Drain Current
(Silicon Limited)
Drain to Source Voltage
Gate to Source Voltage
Pulsed Drain Current
Avalanche Energy, Single Pulse
Power Dissipation
Operating and Storage Temperature
Symbol
ID
VDS
VGS
IDM
EAS
PD
TJ, Tstg
Conditions
TC=25℃
TC=100℃
L=0.4mH, TC=25℃
TC=25℃
-
Value
213
151
150
Unit
A
±20
650
720
429
-55 to175
V
V
A
mJ
W
℃
Max
0.35
60
Unit
℃/W
℃/W
Absolute Maximum Ratings
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Ver.1.0
Symbol
RƟJC
RƟJA
May.2020
P-2
HGB041N15S
Electrical Characteristics at Tj=25℃ (unless otherwise specified)
Static Characteristics
Parameter
Symbol
Drain to Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
Zero Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
Drain to Source on Resistance
Transconductance
Gate Resistance
IGSS
RDS(on)
gfs
RG
Conditions
VGS=0V, ID=250mA
VGS=VDS, ID=250mA
VGS=0V, VDS=150V, Tj=25℃
VGS=0V, VDS=150V, Tj=100℃
VGS=±20V, VDS=0V
VGS=10V, ID=20A
VDS=5V, ID=20A
VGS=0V, VDS Open, f=1MHz
min
150
2
-
Value
Unit
typ
max
V
3
4
1
mA
100
±100 nA
3.8
4.3 mW
70
S
4.0
W
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Turn on Delay Time
Rise time
Turn off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS=0V, VDS=75V, f=1MHz
VDD=75V, ID=20A, VGS=10V
VDD=75V, ID=20A, VGS=10V,
RG=10W,
-
5230
745
11.5
70
20
10
19
24
35
11
-
-
0.9
120
270
-
pF
nC
ns
Reverse Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Ver.1.0
VSD
trr
Qrr
VGS=0V, IF=20A
VR=75V, IF=20A, dIF/dt=100A/ms
V
ns
nC
May.2020
P-3
HGB041N15S
Fig 1. Typical Output Characteristics
100
10V
Figure 2. On-Resistance vs. Gate-Source Voltage
12
6V
ID=20A
5V
80
9
RDS(ON) (mW)
60
ID (A)
4.5V
40
125℃
6
25℃
3
20
Vgs=4V
0
0
1
2
3
0
4
2
4
6
VDS (V)
8
10
VGS (V)
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
Figure 4. Normalized On-Resistance vs. Junction Temperature
10
2.4
ID=20A
2.2
Normalized On-Resistance
8
VGS=6V
RDS(ON) (mW)
6
4
VGS=10V
2
VGS=10V
2
1.8
1.6
VGS=6V
1.4
1.2
1
0
0.8
0
5
10
15
20
0
25
50
ID (A)
75
100
125
150
175
Temperature (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. Typical Source-Drain Diode Forward Voltage
16
1.E+02
VDS=5V
1.E+01
12
25℃
125℃
125°C
1.E+00
25°C
ID(A)
IS (A)
8
1.E-01
4
1.E-02
0
1.E-03
1
2
3
4
VGS(V)
Ver.1.0
5
6
0.1
0.3
0.5
0.7
0.9
1.1
VSD (V)
May.2020
P-4
HGB041N15S
Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage
Figure 8. Typical Capacitance vs. Drain-to-Source Voltage
10000
10
VDS=75V
ID=20A
Ciss
8
Capacitance (pF)
1000
VGS (V)
6
4
Coss
100
10
2
Crss
0
0
10
20
30
40
50
60
1
70
0
20
40
60
80
100
VDS (V)
Qg (nC)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximun Drain Current vs. Case Temperature
1000.0
250
10ms
100.0
200
RDS(ON) limited
1ms
10.0
DC
ID (A)
Current rating ID(A)
100ms
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
150
100
50
0
0.1
1
10
100
1000
0
25
VDS (V)
50
75
100
125
150
175
TCASE (℃)
Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Case
10
Duty=Ton/T
Peak TJ=TC+PDM.ZqJC.RqJC
ZqJC Normalized Transient
Thermal Resistance
RqJC=0.35℃/W
1
Duty=0.5
0.3
0.1
0.1
0.05
0.03
0.01
single pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Ver.1.0
May.2020
HGB041N15S
P-5
Inductive switching Test
Gate Charge Test
Uclamped Inductive Switching (UIS) Test
Diode Recovery Test
Ver.1.0
May.2020
HGB041N15S
P-6
TO-263-7, 7 leads
Ver.1.0
May.2020
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