0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
HGB041N15S

HGB041N15S

  • 厂商:

    HUNTECK(恒泰柯)

  • 封装:

    TO-263-7(D2PAK)

  • 描述:

    MOSFETs N-通道 150V 213A TO-263-7 -55~+175℃

  • 数据手册
  • 价格&库存
HGB041N15S 数据手册
P-1 HGB041N15S 150V N-Ch Power MOSFET Feature ◇ High Speed Power Smooth Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free 150 V VDS TO-263-7 3.8 mW RDS(on),typ 213 A ID (Sillicon Limited) Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control TO-263-7 Drain Pin4 Gate Pin 1 Part Number HGB041N15S Package Marking TO-263-7 GB041N15S Src Pin2,3,5,6,7 Absolute Maximum Ratings at T j=25℃ (unless otherwise specified) Parameter Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature Symbol ID VDS VGS IDM EAS PD TJ, Tstg Conditions TC=25℃ TC=100℃ L=0.4mH, TC=25℃ TC=25℃ - Value 213 151 150 Unit A ±20 650 720 429 -55 to175 V V A mJ W ℃ Max 0.35 60 Unit ℃/W ℃/W Absolute Maximum Ratings Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Ver.1.0 Symbol RƟJC RƟJA May.2020 P-2 HGB041N15S Electrical Characteristics at Tj=25℃ (unless otherwise specified) Static Characteristics Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current Drain to Source on Resistance Transconductance Gate Resistance IGSS RDS(on) gfs RG Conditions VGS=0V, ID=250mA VGS=VDS, ID=250mA VGS=0V, VDS=150V, Tj=25℃ VGS=0V, VDS=150V, Tj=100℃ VGS=±20V, VDS=0V VGS=10V, ID=20A VDS=5V, ID=20A VGS=0V, VDS Open, f=1MHz min 150 2 - Value Unit typ max V 3 4 1 mA 100 ±100 nA 3.8 4.3 mW 70 S 4.0 W Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge Turn on Delay Time Rise time Turn off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS=0V, VDS=75V, f=1MHz VDD=75V, ID=20A, VGS=10V VDD=75V, ID=20A, VGS=10V, RG=10W, - 5230 745 11.5 70 20 10 19 24 35 11 - - 0.9 120 270 - pF nC ns Reverse Diode Characteristics Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ver.1.0 VSD trr Qrr VGS=0V, IF=20A VR=75V, IF=20A, dIF/dt=100A/ms V ns nC May.2020 P-3 HGB041N15S Fig 1. Typical Output Characteristics 100 10V Figure 2. On-Resistance vs. Gate-Source Voltage 12 6V ID=20A 5V 80 9 RDS(ON) (mW) 60 ID (A) 4.5V 40 125℃ 6 25℃ 3 20 Vgs=4V 0 0 1 2 3 0 4 2 4 6 VDS (V) 8 10 VGS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 10 2.4 ID=20A 2.2 Normalized On-Resistance 8 VGS=6V RDS(ON) (mW) 6 4 VGS=10V 2 VGS=10V 2 1.8 1.6 VGS=6V 1.4 1.2 1 0 0.8 0 5 10 15 20 0 25 50 ID (A) 75 100 125 150 175 Temperature (°C) Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage 16 1.E+02 VDS=5V 1.E+01 12 25℃ 125℃ 125°C 1.E+00 25°C ID(A) IS (A) 8 1.E-01 4 1.E-02 0 1.E-03 1 2 3 4 VGS(V) Ver.1.0 5 6 0.1 0.3 0.5 0.7 0.9 1.1 VSD (V) May.2020 P-4 HGB041N15S Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage Figure 8. Typical Capacitance vs. Drain-to-Source Voltage 10000 10 VDS=75V ID=20A Ciss 8 Capacitance (pF) 1000 VGS (V) 6 4 Coss 100 10 2 Crss 0 0 10 20 30 40 50 60 1 70 0 20 40 60 80 100 VDS (V) Qg (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximun Drain Current vs. Case Temperature 1000.0 250 10ms 100.0 200 RDS(ON) limited 1ms 10.0 DC ID (A) Current rating ID(A) 100ms 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 150 100 50 0 0.1 1 10 100 1000 0 25 VDS (V) 50 75 100 125 150 175 TCASE (℃) Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Case 10 Duty=Ton/T Peak TJ=TC+PDM.ZqJC.RqJC ZqJC Normalized Transient Thermal Resistance RqJC=0.35℃/W 1 Duty=0.5 0.3 0.1 0.1 0.05 0.03 0.01 single pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Ver.1.0 May.2020 HGB041N15S P-5 Inductive switching Test Gate Charge Test Uclamped Inductive Switching (UIS) Test Diode Recovery Test Ver.1.0 May.2020 HGB041N15S P-6 TO-263-7, 7 leads Ver.1.0 May.2020
HGB041N15S 价格&库存

很抱歉,暂时无法提供与“HGB041N15S”相匹配的价格&库存,您可以联系我们找货

免费人工找货