NJM5532M

SIP8 is the NRND product as of February,2023 NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared to the standard dual operational amplifiers, such as the NJM4558, it shows better noise performance, improved output drive capability, and considerably higher small-signal and power bandwidths. it is compensated internally for voltage follower circuit. This makes the device especially suitable for application in high quality and professional audio equipment, instrumentation, control circuits, and telephone channel amplifiers. If very low noise characteristic is of prime importance, it is recommended D-Rank type products(NJM5532DD/LD/MD). These have specified maximum limits for equivalent input noise voltage. ■ FEATURES ● Operating Voltage ● Small Signal Bandwidth ● Output Drive Capability ● Input Noise Voltage ● Power Bandwidth ● Slew Rate ● Bipolar Technology ● Package Outline ■ PACKAGE OUTLINE t c du ro P D NJM5532D (DIP8) NNJM5532L R N (SIP8) NJM5532M (DMP8) ±3V~±22V 10MHz typ. 600Ω,10Vrms typ. 5nV/√Hz typ. 140kHz typ. 8V/μs typ. DIP8,DMP8,SIP8 ■ PIN CONFIGURATION Top View 1 2 3 Top View 8 A 7 B 4 6 5 1 2 3 4 5 6 SIP8 Package 7 8 PIN FUNCTION 1.A OUTPUT 2.A -INPUT 3.A +INPUT 4.V 5.B +INPUT 6.B -INPUT 7.B OUTPUT + 8.V DIP8, DMP8 Package ■ EQUIVALENT CIRCUIT ( 1/2 Shown ) Ver.2020-03-31 -1- NJM5532 SIP8 is the NRND product as of February,2023 ■ ABSOLUTE MAXIMUM RATINGS ( Ta=25˚C ) PARAMETER Supply Voltage Common Mode Input Voltage Range Differential Input Voltage Range Power Dissipation Operating Temperature Range Storage Temperature Range SYMBOL + V /V VICM VID PD Topr Tstg RATING ±22 + V /V ±0.5 DIP8 : 500 DMP8 : 600(Note1) SIP8 : 800 -20~+75 -40~+125 UNIT V V V mW °C °C (Note1) On the cermic PCB (10x20x0.635mm) ■ RECOMMENDED OPERATING VOLTAGE (Ta=25°C) PARAMETER Supply Voltage SYMBOL + V /V RATING ±3~±22 UNIT V ■ ELECTRICAL CHARACTERISTICS ( V+/V-=±15V,Ta=25˚C, unless otherwise noted.) ● DC ELECTRICAL CHARACTERISTICS PARAMETER Input Offset Voltage Input Offset Current Input Bias Current Supply Current Common Mode Input Voltage Range Common Mode Rejection Ratio Supply Voltage Rejection Ratio Voltage Gain1 Voltage Gain2 Maximum Output Voltage1 Maximum Output Voltage2 Input Resistance Short Circuit Output Current SYMBOL TEST CONDITION VIO RS≤10kΩ IIO IB ICC RL=∞ VICM CMR RS≤10kΩ SVR RS≤10kΩ AV1 RL≥2kΩ, VO=±10V AV2 RL≥600Ω, VO=±10V VOM1 RL≥600Ω + VOM2 RL≥600Ω, V /V =±18V RIN IOS MIN. ± 12 70 80 88 83.5 ± 12 ± 15 30 - TYP. 0.5 10 200 9 ± 13 100 100 100 94 ± 13 ± 16 300 38 MAX. 4 150 800 16 - UNIT mV nA nA mA V dB dB dB dB V V kΩ mA MIN. - TYP. 0.3 10 67 8 10 140 100 8 5 2.7 0.7 110 MAX. - UNIT Ω % dB V/μs MHz kHz kHz nV/√Hz nV/√Hz pA/√Hz pA/√Hz dB ● AC ELECTRICAL CHARACTERISTICS PARAMETER Output Resistance Overshoot Voltage Gain Slew Rate Gain Bandwidth Product Power Bandwidth Equivalent Input Noise Voltage Equivalent Input Noise Current Channel Separation SYMBOL TEST CONDITION RO AV=30dB,f=10kHz, RL=600Ω AV=1, VIN=100mVPP, RL=100pF, RL=600Ω AV f=10kHz SR GB CL=100pF, RL=600Ω WPG VO=±10V + WPG VO=±14V, RL=600Ω, V /V =±18V en fO=30Hz en fO=1kHz in fO=30Hz in fO=1kHz CS f=1kHz, RS=5kΩ ■ ELECTRICAL CHARACTERISTICS (D-ranktype(Note2), V+/V-=±15V, Ta=25˚C, unless otherwise noted.) PARAMETER Equivalent Input Noise Voltage SYMBOL TEST CONDITION VNI RIAA, RS=2.2kΩ MIN. - TYP. - MAX. 1.4 UNIT μVrms (Note2)D-rank type is a Equivalent Input Noise Voltage selected product. -2- Ver.2020-03-31 SIP8 is the NRND product as of February,2023 NJM5532 ■ TYPICAL CHARACTERISTICS Maximum Output Voltage vs. Load Resistance Gain/Phase vs. Frequency + - V /V =±15V, Ta=25ºC Ta=25ºC 15 50 +VOM Maximum Output Voltage [V] Gain Phase 30 0 20 -60 10 -120 Phase [deg] Voltage Gain [dB] 40 10 5 0 -5 -10 -VOM 0 10k -180 10M 100k 1M Frequency [Hz] -15 10 Maximum Output Voltage Swing vs. Frequency 100 1k Load Resistance [Ω] Voltage Noise vs. Source Resistance V+/V-=±15V, Ta=25ºC V+/V-=±15V, Ta=25ºC 10 35 Equivalent Input Noise Voltage [μVrms] Maximum Output Voltage Swing [VPP] 40 30 25 20 15 10 5 0 10k Flat 100kHz LPF 1 JIS A Weighting Rs 100 10k 0.1 100k Frequency [Hz] 1M 10 100 1k Source Resistance [Ω] Voltage Noise vs. Frequency + 10k THD vs. Output Voltage - + V /V =±15V, RS=50Ω, AV=60dB - V /V =±15V, RL=10kΩ, GV=20dB, Ta=25ºC 0.01 Total Harmonic Distortion THD [%] 100 Equivalent Input Noise Voltage [nV/Hz] 10k 90 80 70 60 Ta=75ºC Ta=80ºC 50 40 Ta=25ºC 30 20 10 0 f=20kHz 0.001 f=20Hz f=1kHz 0.0001 1 Ver.2020-03-31 10 100 1k Frequency [Hz] 10k 100k 1 10 Output Voltage [Vrms] -3- NJM5532 SIP8 is the NRND product as of February,2023 ■ TYPICAL CHARACTERISTICS Supply Current vs. Temperature Supply Current vs. Supply Voltage + 18 14 16 Supply Current [mA] Supply Current [mA] 12 10 8 6 4 2 14 12 10 8 6 4 2 0 0 0 ±5 ±10 ±15 Supply Voltage V+/V- [V] ±20 -50 Input Offset Voltage vs. Temperature -25 0 25 50 75 100 Ambient Temperature [ºC] 125 Input Bias Current vs. Temperature V+/V-=±15V V+/V-=±15V 2 400 1.5 350 Input Bias Current [nA] Input Offset Voltage [mV] - V /V =±15V Ta=25ºC 1 0.5 0 -0.5 -1 -1.5 300 250 200 150 100 50 -2 0 -50 -25 0 25 50 75 100 Ambient Temperature [ºC] 125 -50 -25 0 25 50 75 100 Ambient Temperature [ºC] 125 Maximum Output Voltage vs. Temperature Maximum Output Voltage vs. Supply Voltage RL=2kΩ, Ta=25ºC + - V /V =±15V, RL=600Ω 25 15 15 RL=2kΩ 10 +VOM 5 RL=600Ω 0 -5 -10 -VOM -15 Maximum Output Voltage [V] Maximum Output Voltage [V] 20 10 5 0 -5 -10 -20 -25 -15 0 -4- ±5 ±10 ±15 Supply Voltage V+/V- [V] ±20 -50 -25 0 25 50 75 100 Ambient Temperature [ºC] 125 Ver.2020-03-31 SIP8 is the NRND product as of February,2023 NJM5532 ■ TEST CIRCUIT Noise Voltage (RIAA) measurement circuit +15V -15V 100μ 3.3μ 100μ Rs 2.2k 40dB Amp 30kHz LPF 0.47μ 2.2μ Vout 56k 30k 330k 0.0024μ 0.0082μ 220k 47μ 610 ■ NOTICE When used in voltage follower circuit, put a current limit resistor into non-inverting input terminal in order to avoid inside input diode destruction when the power supply is turned on. ( ref.Fig.1 ) 1k OUTPUT INPUT (Fig.1) ■ Caution to Thermal Design If the NJM5532 junction temperature (Tj) exceeds guaranteed value (125 degree) or the package power dissipation (PD), there is possibility of the NJM5532 deterioration or breakdown. The NJM5532 supply current is higher (ICCMAX=16mA at V+/V-=±15V,Ta=+25˚C) and has positive temperature coefficient (Refer to Supply Current vs. Temperature characteristic). Therefore, you should carefully design with due attention to the supply voltage, the internal power dissipation and the ambient temperature. DMP8 : On the ceramic PCB (10x20x0.635mm) Ver.2020-03-31 -5- SIP8 is the NRND product as of February,2023 NJM5532 ■ Countermeasure to Excess Current by Parasitic Circuit + When the NJM5532 V is open (Fig.2), the NJM5532 may be burnt flowing the excess current by internal parasitic circuit(Fig.3).The excess current generating condition is following: / Between input terminal and V voltage difference is higher. / Input terminal has no resistance of 1kΩ or more. + / V terminal is connected with low impedance. (Ietc is higher) V+(OPEN) VIN V+ Ietc Icc+α V- Fig.2 Fig.3 For countermeasure to excess current by parasitic circuit, NJRC recommends the following method. / prevent operating of a parasitic circuit by inserting a SBD (Fig.4-1/4-2). / limiting a parasitic circuit operation by inserting a resistance (1kΩ or more) (Fig.5). SBD V+ SBD V+ V+ 1kΩ or more V- Fig.4-1 V- V- Fig.4-2 Fig.5 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -6- Ver.2020-03-31