D42.27180S.001

RoHS Compliant 4GB ECC DDR4 SO-DIMM Halogen free Product Specifications September 17, 2020 Version 0.5 Apacer Technology Inc. 1F., No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City 236, Taiwan Tel: +886-2-2267-8000 www.apacer.com Fax: +886-2-2267-2261 Table of Contents General Description ....................................................................................................... 2  Ordering Information ..................................................................................................... 2  Key Parameters .............................................................................................................. 2  Specifications: ................................................................................................................ 3  Features: ......................................................................................................................... 4  Pin Assignments ............................................................................................................. 5  Pin Descriptions ............................................................................................................. 7  Functional Block Diagram ............................................................................................. 8  Absolute Maximum Ratings .......................................................................................... 9  DRAM Component Operating Temperature Range..................................................... 10  Operating Conditions ................................................................................................... 11  Environmental Requirements....................................................................................... 12  Mechanical Drawing .................................................................................................... 13  ©Apacer Technology Inc. 1 General Description Apacer D42.27180S.001 is a 512M x 72 DDR4 SDRAM (Synchronous DRAM) SO-DIMM. This high-density memory module consists of 9 pieces 512M x 8 bits DDR4 synchronous DRAMs in FBGA packages and a 4K Bits EEPROM. The module is a 260-pins dual in-line memory module and is intended for mounting into a connector socket. The following provides general specifications of this module. Ordering Information Part Number Bandwidth Speed Grade Max Frequency CAS Latency D42.27180S.001 25.6 GB/sec 3200 Mbps 1600 MHz CL22 Density Organization Component Rank 4GB 512M x 72 512M x8*9 1 Key Parameters MT/s DDR4-2400 DDR4-2666 DDR4-2933 DDR4-3200 Grade -CL17 -CL19 -CL21 -CL22 Unit tCK (min) 0.83 0.75 0.68 0.62 ns CAS latency 17 19 21 22 tCK tRCD (min) 14.16 14.25 14.32 13.75 ns tRP (min) 14.16 14.25 14.32 13.75 ns tRAS (min) 32 32 32 32 ns tRC (min) 46.16 46.25 46.32 45.75 ns CL-tRCD-tRP 17-17-17 19-19-19 21-21-21 22-22-22 tCK ©Apacer Technology Inc. 2 Specifications:  Support ECC error detection and correction  On-DIMM thermal sensor : Yes  Organization: 512 words x 72 bits, 1 rank  Integrating 9 pieces of 4G bits DDR4 SDRAM sealed FBGA  Package: 260-pin socket type small outline dual in-line memory module (ECC SO-DIMM)  PCB: height 30.00 mm, lead pitch 0.50 mm (pin),  Serial Presence Detect (SPD)  Power Supply: VDD=1.2V (1.14V to 1.26V)  VDDQ = 1.2V (1.14V to 1.26V)  VPP = 2.5V (2.375V to 2.75V)  VDDSPD = 2.2V to 3.6V  16 internal banks (4 Bank Groups)  CAS Latency (CL): 10, 11, 12, 13, 14, 15,16,17,18,19, 20, 21, 22,24  CAS Write Latency (CWL): 16,20  Average refresh period 7.8us at 0°C ≦ TC ≦ 85°C 3.9us at 85°C ≦ TC ≦ 95°C  Lead-free (RoHS compliant)  Halogen free  PCB: 30µ inch gold finger ©Apacer Technology Inc. 3 Features:  Functionality and operations comply with the DDR4 SDRAM datasheet  Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available  Bi-Directional Differential Data Strobe  8 bit pre-fetch  Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)  Supports ECC error correction and detection  Per DRAM Addressability is supported  Internal Vref DQ level generation is available  Write CRC is supported at all speed grades  DBI (Data Bus Inversion) is supported(x8)  CA parity (Command/Address Parity) mode is supported ©Apacer Technology Inc. 4 Pin Assignments Pin No. Pin name-Front Pin No. Pin name-Back Pin No. Pin name-Front 1 VSS 2 VSS 133 A1 134 EVENT_n 3 DQ5 4 DQ4 135 VDD 136 VDD 5 VSS 6 VSS 137 CK0_t 138 CK1_t 7 DQ1 8 DQ0 139 CK0_c 140 CK1_c 9 VSS 10 VSS 141 VDD 142 VDD 11 DQS0_c 12 DM0_n, DBI0_n 143 PARITY 144 A0 13 DQS0_t 14 VSS 145 BA1 146 A10/AP 15 VSS 16 DQ6 147 VDD 148 VDD 17 DQ7 18 VSS 149 CS0_n 150 BA0 19 VSS 20 DQ2 151 A14/WE_n 152 A16/RAS_n 21 DQ3 22 VSS 153 VDD 154 VDD 23 VSS 24 DQ12 155 ODT0 156 A15/CAS_n 25 DQ13 26 VSS 157 CS1_n 158 A13 27 VSS 28 DQ8 159 VDD 160 VDD 29 DQ9 30 VSS 161 ODT1 162 C0, CS2_n, NC 31 VSS 32 DQS1_c 163 VDD 164 VREFCA 33 DM1_n, DBI1_n 34 DQS1_t 165 C1, CS3_n, NC 166 SA2 35 VSS 36 VSS 167 VSS 168 VSS 37 DQ15 38 DQ14 169 DQ37 170 DQ36 39 VSS 40 VSS 171 VSS 172 VSS 41 DQ10 42 DQ11 173 DQ33 174 DQ32 43 VSS 44 VSS 175 VSS 176 VSS 45 DQ21 46 DQ20 177 DQS4_c 178 DM4_n, DBI4_n 47 VSS 48 VSS 179 DQS4_t 180 VSS 49 DQ17 50 DQ16 181 VSS 182 DQ39 51 VSS 52 VSS 183 DQ38 184 VSS 53 DQS2_c 54 DM2_n, DBI2_n 185 VSS 186 DQ35 55 DQS2_t 56 VSS 187 DQ34 188 VSS 57 VSS 58 DQ22 189 VSS 190 DQ45 59 DQ23 60 VSS 191 DQ44 192 VSS 61 VSS 62 DQ18 193 VSS 194 DQ41 63 DQ19 64 VSS 195 DQ40 196 VSS 65 VSS 66 DQ28 197 VSS 198 DQS5_c 67 DQ29 68 VSS 199 DM5_n, DBI5_n 200 DQS5_t 69 VSS 70 DQ24 201 VSS 202 VSS ©Apacer Technology Inc. 5 Pin Pin name-Back No. Pin No. Pin name-Front Pin No. Pin name-Back Pin No. Pin name-Front 71 DQ25 72 VSS 203 DQ46 204 DQ47 73 VSS 74 DQS3_c 205 VSS 206 VSS 75 DM3_n, DBI3_n 76 DQS3_t 207 DQ42 208 DQ43 77 VSS 78 VSS 209 VSS 210 VSS 79 DQ30 80 DQ31 211 DQ52 212 DQ53 81 VSS 82 VSS 213 VSS 214 VSS 83 DQ26 84 DQ27 215 DQ49 216 DQ48 85 VSS 86 VSS 217 VSS 218 VSS 87 CB5, NC 88 CB4, NC 219 DQS6_c 220 DM6_n, DBI6_n 89 VSS 90 VSS 221 DQS6_t 222 VSS 91 CB1, NC 92 CB0, NC 223 VSS 224 DQ54 93 VSS 94 VSS 225 DQ55 226 VSS 95 DQS8_c 96 DM8_n, DBI8_n 227 VSS 228 DQ50 97 DQS8_t 98 VSS 229 DQ51 230 VSS 99 VSS 100 CB6, NC 231 VSS 232 DQ60 101 CB2, NC 102 VSS 233 DQ61 234 VSS 103 VSS 104 CB7, NC 235 VSS 236 DQ57 105 CB3, NC 106 VSS 237 DQ56 238 VSS 107 VSS 108 RESET_n 239 VSS 240 DQS7_c 109 CKE0 110 CKE1 241 DM7_n, DBI7_n 242 DQS7_t 111 VDD 112 VDD 243 VSS 244 VSS 113 BG1 114 ACT_n 245 DQ62 246 DQ63 115 BG0 116 ALERT_n 247 VSS 248 VSS 117 VDD 118 VDD 249 DQ58 250 DQ59 119 A12 120 A11 251 VSS 252 VSS 121 A9 122 A7 253 SCL 254 SDA 123 VDD 124 VDD 255 VDDSPD 256 SA0 125 A8 126 A5 257 VPP 258 VTT 127 A6 128 A4 259 VPP 260 SA1 129 VDD 130 VDD – – – – 131 A3 132 A2 – – – – *IC Component Composition : ©Apacer Technology Inc. 256Mx8 512Mx8 1024Mx8 2048Mx8 A0~A13 A0~A14, A0~A15, A0~A16, 512Mx4 1024Mx4 2048Mx4 6 A0~A14 A0~A15 A0~A16 Pin Pin name-Back No. Pin Descriptions Pin Name Ax 1* SDRAM address bus BAx SDRAM bank select BGx SDRAM bank group select RAS_n CAS_n WE_n Description 2* 3* 4* SDRAM row address strobe SDRAM column address strobe SDRAM write enable CSx_n DIMM Rank Select Lines CKEx SDRAM clock enable lines ODTx SDRAM on-die termination control lines ACT_n SDRAM input for activate input DQx DIMM memory data bus CBx DIMM ECC check bits TDQSx_t ; TDQSx_c Dummy loads for mixed populations of x4 based and x8 based RDIMMs. Not used on UDIMMs DQSx_t Data Buffer data strobes (positive line of differential pair) DQSx_c Data Buffer data strobes (negative line of differential pair) DMx_n, DBIx_n SDRAM data masks/data bus inversion(x8-based x72 DIMMs) CKx_t SDRAM clock input (positive line of differential pair) CKx_c SDRAM clocks input (negative line of differential pair) 2 SCL I C serial bus clock for SPD-TSE and register SDA I C serial bus data line for SPD-TSE and register SAx I C slave address select for SPD-TSE and register PARITY 2 2 SDRAM parity input VDD SDRAM core power supply 12 V Optional Power Supply on socket but not used on DIMM VREFCA VSS SDRAM command/address reference supply Power supply return (ground) VDDSPD Serial SPD-TSE positive power supply ALERT_n SDRAM ALERT_n output VPP SDRAM Supply RESET_n Set Register and SDRAMs to a Known State EVENT_n SPD signals a thermal event has occurred VTT SDRAM I/O termination supply RFU Reserved for future use *Notes: 1. Address A17 is only valid for 16 Gb x4 based SDRAMs. For UDIMMs this connection pin is NC. 2. RAS_n is a multiplexed function with A16. 3. CAS_n is a multiplexed function with A15. 4. WE_n is a multiplexed function with A14. ©Apacer Technology Inc. 7 Functional Block Diagram ©Apacer Technology Inc. 8 Absolute Maximum Ratings Parameter Symbol Description Units Notes Voltage on VDD pin relative to Vss VDD - 0.3 V ~ 1.5 V V 1,2 Voltage on VDDQ pin relative to Vss VDDQ - 0.3 V ~ 1.5 V V 1,2 Voltage on VPP pin relative to Vss VPP - 0.3 V ~ 3.0 V V 3 Voltage on any pin relative to Vss VIN, VOUT - 0.3 V ~ 1.5 V V 1,2 Notes: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDD and VDDQ must be within 300 mV of each other at all times; and VREFCA must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less than 500 mV; VREF may be equal to or less than 300 mV 3. VPP must be equal or greater than VDD/VDDQ at all times　 ©Apacer Technology Inc. 9 DRAM Component Operating Temperature Range Symbol Parameter Rating Units Notes Normal Operating Temperature Range 0 to 85 ℃ 1,2 Extended Temperature Range 85 to 95 ℃ 1,3 TOPER Notes: 1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. 2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0℃ - 85℃ under all operating conditions. 3. Some applications require operation of the DRAM in the Extended Temperature Range between 85℃ and 95℃ case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:  Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. ©Apacer Technology Inc. 10 Operating Conditions Recommended DC Operating Conditions – DDR4 (1.2V) operation Rating Symbol VDD Parameter Supply Voltage VDDQ Supply Voltage for Output VPP Activation Supply Voltage Units Notes 1.26 V 1,2,3 1.2 1.26 V 1,2,3 2.5 2.75 V 3 Min. Typ. Max. 1.14 1.2 1.14 2.375 Notes: 1. Under all conditions VDDQ must be less than or equal to VDD.. 2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. 3. DC bandwidth is limited to 20MHz. ©Apacer Technology Inc. 11 Environmental Requirements Symbol Parameter Rating Units Notes HOPR Operating Humidity (relative) 10 to 90 % TSTG Storage Temperature -50 to +100 °C 1 HSTG Storage Humidity (without condensation) 5 to 95 % 1 PBAR Barometric Pressure (operating & storage) 105 to 69 kPa 1,2 Notes: 1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only. and device functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Up to 9850 ft. ©Apacer Technology Inc. 12 Mechanical Drawing Unit: mm 30µ inch gold finger (All dimensions are in millimeters with ±0.15mm tolerance unless specified otherwise.) ©Apacer Technology Inc. 13 Revision History Revision Date Description Remark 0.1 5/5/2014 Initial release 0.2 11/2/2015 Updated VDDSPD 0.3 03/15/2017 Add Environmental Requirements 0.4 09/04/2017 Remove TOPR (Operating Temperature (ambient)) 0.5 07/23/2020 Updated DRAM Component Operating Temperature Range ©Apacer Technology Inc. 14 Global Presence Taiwan (Headquarters) Apacer Technology Inc. 1F., No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City 236, Taiwan R.O.C. Tel: +886-2-2267-8000 Fax: +886-2-2267-2261 amtsales@apacer.com U.S.A. Apacer Memory America, Inc. 46732 Lakeview Blvd., Fremont, CA 94538 Tel: 1-408-518-8699 Fax: 1-510-249-9568 sa@apacerus.com Japan Apacer Technology Corp. 5F, Matsura Bldg., Shiba, Minato-Ku Tokyo, 105-0014, Japan Tel: 81-3-5419-2668 Fax: 81-3-5419-0018 jpservices@apacer.com Europe Apacer Technology B.V. Science Park Eindhoven 5051 5692 EB Son, The Netherlands Tel: 31-40-267-0000 Fax: 31-40-290-0686 sales@apacer.nl China Apacer Electronic (Shanghai) Co., Ltd. Room D, 22/FL, No.2, Lane 600, JieyunPlaza, Tianshan RD , Shanghai , 200051, China Tel: 86-21-6228-9939 Fax:86-21-6228-9936 sales@apacer.com.cn India Apacer Technologies Pvt Ltd. 1874, South End C Cross,9th Block Jayanagar, Bangalore-560069,INDIA. Tel: 91-80-4152-9061/62 Fax: 91-80-4170-0215 sales_india@apacer.com ©Apacer Technology Inc. 15