AJ6.112FGA.00110

RoHS Recast Compliant Industrial SDHC/XC 5.0 CV110-SD Product Specifications (Kioxia TLC BiCS3 64 Layers) April 19, 2022 Version 1.5 Apacer Technology Inc. 1F, No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City, Taiwan, R.O.C Tel: +886-2-2267-8000 www.apacer.com Fax: +886-2-2267-2261 Specifications Overview:   Fully Compatible with SD Card Association Specifications – Physical Layer Specification Ver6.1 – Security Specification Ver4.0  Wide: -40°C to 85°C – 32, 64, 128, 256 GB Performance1 – Sequential read: Up to 85 MB/sec – Sequential write: Up to 32 MB/sec – Random read (4K): Up to 1,500 IOPS – Random write (4K): Up to 600 IOPS Operating: Standard: -25°C to 85°C Storage: -40°C to 85°C  Operating Voltage: 2.7V ~ 3.6V  Power Consumption1  – Operating: 95 mA – Standby: 160 µA Bus Speed Mode: Supports Class 10 with U1 and UHS-I2 Flash Management – SDR12: SDR up to 25MHz 1.8V signaling – Built-in advanced ECC algorithm – SDR25: SDR up to 50MHz 1.8V signaling – Global Wear Leveling – – Flash bad-block management SDR50: 1.8V signaling, frequency up to 100MHz, up to 50 MB/sec – Power Failure Management – SDR104: 1.8V signaling, frequency up to 208MHz, up to 104MB/sec – Flash Translation Layer: Page Mapping – – S.M.A.R.T. – SMART Read RefreshTM DDR50: 1.8V signaling, frequency up to 50MHz, sampled on both clock edges, up to 50 MB/sec NAND Flash Type: Kioxia TLC BiCS3 64 Layers   SD-Protocol Compatible   Supports SD SPI Mode  Backward Compatible with 3.0 and 2.0  Endurance (in Terabytes Written: TBW)  Temperature Range – Capacity –   –  – 32 GB: 48 TBW – 64 GB: 94 TBW – 128 GB: 163 TBW – 256 GB: 342 TBW Physical Dimensions 32mm (L) x 24mm (W) x 2.1mm (H) Supports Video Speed Class – V10: 32 GB – V30: 64-256 GB RoHS Recast Compliant Notes: 1. Varies from capacities. Performance values presented here are typical and measured based on USB 3.0 card reader. The results may vary depending on settings and platforms. 2. Timing in 1.8V signaling is different from that of 3.3V signaling. Operation mode selection command is complaint with SD 3.0, referring to SDA’s Part 1, Physical Layer Specification, Ver 3.01 (Section 3.9). 1 © 2022 Apacer Technology Inc. Table of Contents 1. General Description ..........................................................................4 1.1 Functional Block .......................................................................................................................... 4 1.2 Flash Management ...................................................................................................................... 5 1.2.1 Bad Block Management .......................................................................................................... 5 1.2.2 Powerful ECC Algorithms ....................................................................................................... 5 1.2.3 S.M.A.R.T. .............................................................................................................................. 5 1.2.4 Global Wear Leveling ............................................................................................................. 5 1.2.5 Power Failure Management.................................................................................................... 5 1.2.6 SMART Read RefreshTM ......................................................................................................... 5 1.2.7 Flash Translation Layer – Page Mapping ............................................................................... 6 2. Product Specifications ......................................................................7 2.1 Card Architecture ........................................................................................................................ 7 2.2 Pin Assignments ......................................................................................................................... 7 2.3 Capacity ........................................................................................................................................ 8 2.4 Performance ................................................................................................................................. 8 2.5 Electrical ....................................................................................................................................... 8 2.6 Endurance .................................................................................................................................... 9 3. Physical Characteristics .................................................................10 3.1 Physical Dimensions ................................................................................................................. 10 3.2 Durability Specifications........................................................................................................... 11 4. DC Characteristics ..........................................................................12 4.1 SD Interface Timing (Default) ................................................................................................... 12 4.2 SD Interface Timing (High-Speed Mode) ................................................................................. 13 4.3 SD Interface Timing (SDR12, SDR25, SDR50 and SDR104 Modes) ...................................... 15 4.3.1 Input ...................................................................................................................................... 15 4.3.2 Output ................................................................................................................................... 16 4.4 SD Interface Timing (DDR50 Mode) ......................................................................................... 17 5. S.M.A.R.T. ........................................................................................19 5.1 Direct Host Access to SMART Data via SD General Command (CMD56) ............................ 19 5.2 Process for Retrieving SMART Data ....................................................................................... 19 6. Product Ordering Information .........................................................22 6.1 Product Code Designations ..................................................................................................... 22 2 © 2022 Apacer Technology Inc. 6.2 Valid Combinations ................................................................................................................... 23 3 © 2022 Apacer Technology Inc. 1. General Description Apacer SD CV110-SD is compatible with the SD card version 5.0. The command list supports [Physical Layer Specification Ver6.10 Final] definitions. Card Capacity of Non-secure Area, Secure Area Supports [Part 3 Security Specification Ver4.00 Final] Specifications. The SD 5.0 card comes with 9-pin interface designed to operate at a maximum operating frequency of 208MHz. It can alternate communication protocol between the SD mode and SPI mode. It performs data error detection and correction with very low power consumption. It supports capacity up to 256GB with exFAT SDXC. Apacer SD CV110-SD Secure Digital 5.0 card with high performance, good reliability and wide compatibility is nowadays one of the most popular cards well adapted for hand-held applications with customized firmware techniques in semi-industrial/medical markets already. 1.1 Functional Block The SD contains a flash controller and flash media with SD standard interface. SD Interface Flash Array Clock Command Data x4 SD flash controller Media Flash Media Flash Power input Figure 1-1 Functional Block Diagram 4 © 2022 Apacer Technology Inc. 1.2 Flash Management 1.2.1 Bad Block Management The SD controller contains logical/physical flash block mapping and bad block management system. It will manage all flash block include user data space and spare block. The SD also contains a sophisticated defect and error management system. It does a read after write under margin conditions to verify that the data is written correctly (except in the case of write preerased sectors). In case that a bit is found to be defective, the SD replaces this bad bit with a spare bit within the sector header. If necessary, the SD will even replace the entire sector with a spare sector. This is completely transparent to the master (host device) and does not consume any user data space. 1.2.2 Powerful ECC Algorithms Flash memory cells will deteriorate with use, which might generate random bit errors in the stored data. Thus, the SD card applies the advanced ECC Algorithm, which can detect and correct errors occur during read process, ensure data been read correctly, as well as protect data from corruption. 1.2.3 S.M.A.R.T. SMART, an acronym for Self-Monitoring, Analysis and Reporting Technology, is a special function that allows a memory device to automatically monitor its health. Apacer provides a program named SmartInfo Tool to observe Apacer’s SD and MicroSD cards. Note that this tool can only support Apacer’s industrial SD and MicroSD cards. This tool will display firmware version, endurance life ratio, good block ratio, and so forth. 1.2.4 Global Wear Leveling NAND Flash devices can only undergo a limited number of program/erase cycles, and in most cases, the flash media are not used evenly. If some area get updated more frequently than others, the lifetime of the device would be reduced significantly. Thus, Global Wear Leveling technique is applied to extend the lifespan of NAND Flash by evenly distributing writes and erase cycles across the media. Apacer provides Global Wear Leveling algorithm, which can efficiently spread out the flash usage through the whole flash media area. Moreover, by implementing Global Wear Leveling algorithm, the life expectancy of the NAND Flash is greatly improved. 1.2.5 Power Failure Management Power Failure Management plays a crucial role when power supply becomes unstable. Power disruption may occur when users are storing data into the SSD, leading to instability in the drive. However, with Power Failure Management, a firmware protection mechanism will be activated to scan pages and blocks once power is resumed. Valid data will be transferred to new blocks for merging and the mapping table will be rebuilt. Therefore, data reliability can be reinforced, preventing damage to data stored in the NAND Flash. 1.2.6 SMART Read RefreshTM Apacer’s SMART Read Refresh plays a proactive role in avoiding read disturb errors from occurring to ensure health status of all blocks of NAND flash. Developed for read-intensive applications in particular, SMART Read Refresh is employed to make sure that during read operations, when the read operation threshold is reached, the data is refreshed by re-writing it to a different block for subsequent use. 5 © 2022 Apacer Technology Inc. 1.2.7 Flash Translation Layer – Page Mapping Page mapping is an advanced flash management technology whose essence lies in the ability to gather data, distribute the data into flash pages automatically, and then schedule the data to be evenly written. Page-level mapping uses one page as the unit of mapping. The most important characteristic is that each logical page can be mapped to any physical page on the flash memory device. This mapping algorithm allows different sizes of data to be written to a block as if the data is written to a data pool and it does not need to take extra operations to process a write command. Thus, page mapping is adopted to increase random access speed and improve SD lifespan, reduce block erase frequency, and achieve optimized performance and lifespan. 6 © 2022 Apacer Technology Inc. 2. Product Specifications 2.1 Card Architecture Write Enabled 1 2 3 4 5 6 Write Protected 1 7 8 2 3 4 5 6 7 8 9 9 WP WP Figure 2-1 Card Architecture 2.2 Pin Assignments Table 2-1 Pin Assignments SD Mode SPI Mode Pin Name Description Name Description 1 CD/DAT3 Card detect/Data line[Bit 3] CS Chip select 2 CMD Command/Response DI Data in 3 VSS1 Supply voltage ground VSS Supply voltage ground 4 VDD Supply voltage VDD Supply voltage 5 CLK Clock SCLK Clock 6 VSS2 Supply voltage ground VSS2 Supply voltage ground 7 DAT0 Data line[Bit 0] DO Data out 8 DAT1 Data line[Bit 1] Reserved 9 DAT2 Data line[Bit 2] Reserved 7 © 2022 Apacer Technology Inc. 2.3 Capacity The following table shows the specific capacity for the SD 5.0 card. Table 2-2 Capacity Specifications Capacity Total bytes 32 GB 31,033,655,296 64 GB 62,243,471,360 128 GB 124,755,378,176 256 GB 249,443,647,488 Note: Total bytes are viewed under Windows operating system and were measured by SD format too. 2.4 Performance Performances of the SD 5.0 card are shown in the table below. Table 2-3 Performance Specifications Capacity 32 GB 64 GB 128 GB 256 GB Sequential Read* (MB/s) 85 85 80 85 Sequential Write* (MB/s) 20 27 32 32 Random Read IOPS** (4K) 1,400 1,500 1,500 1,500 Random Write IOPS** (4K) 500 600 600 600 Performance Notes:  Results may differ from various flash configurations or host system setting.  Sequential read/write is based on CrystalDiskMark 5.2.1 with file size 1,000MB.  Random read/write is measured using IOMeter with Queue Depth 32.  Performance results are measured based on USB 3.0 card reader. 2.5 Electrical Table 2-4 Operating Voltages Symbol Parameter Min. Max. Unit VDD Power Supply Voltage 2.7 3.6 V Table 2-5 Power Consumption Capacity 32 GB 64 GB 128 GB 256 GB Operating (mA) 70 75 90 95 Standby (µA) 85 95 120 160 Mode Notes:  All values are typical and may vary depending on flash configurations or host system settings.  Active power is an average power measurement performed using CrystalDiskMark with 128KB sequential read/write transfers.  Power is measured based on USB 3.0 card reader. 8 © 2022 Apacer Technology Inc. 2.6 Endurance The endurance of a storage device is predicted by TeraBytes Written based on several factors related to usage, such as the amount of data written into the drive, block management conditions, and daily workload for the drive. Thus, key factors, such as Write Amplifications and the number of P/E cycles, can influence the lifespan of the drive. Table 2-6 Endurance Specifications Capacity TeraBytes Written 32 GB 48 64 GB 94 128 GB 163 256 GB 342 Notes:  This estimation complies with Apacer internal workload.  Flash vendor guaranteed 3D NAND TLC P/E cycle: 3K  WAF may vary from capacity, flash configurations and writing behavior on each platform.  1 Terabyte = 1,024GB 9 © 2022 Apacer Technology Inc. 3. Physical Characteristics 3.1 Physical Dimensions Dimensions: 32 ㎜ (L) x 24 ㎜ (W) x 2.1 ㎜ (H) 10 © 2022 Apacer Technology Inc. 3.2 Durability Specifications Table 3-1 Durability Specifications Item Temperature Specifications -25°C to 85°C (Standard) -40°C to 85°C (Wide) -40°C to 85°C (Storage) Shock 1,500G, 0.5ms Vibration 20Hz~80Hz/1.52mm (frequency/displacement) 80Hz~2000Hz/20G (frequency/displacement) X, Y, Z axis/60mins each Drop 1.5m free fall, 6 surfaces of each Bending ≧ 10N, hold 1min/5times Torque 0.15N-m or 2.5deg, hold 30 seconds/ 5 times Salt spray Concentration: 3% NaCl at 35°C (storage for 24 hours) Waterproof JIS IPX7 compliance, Water temperature 25°C Water depth: the lowest point of unit is locating 1000mm below surface (storage for 30 mins) X-Ray Exposure 0.1 Gy of medium-energy radiation (70 KeV to 140 KeV, cumulative dose per year) to both sides of the card ;storage for 30 mins) Switch cycle 0.4~0.5N, 1000 times Durability 10,000 times mating cycle ESD Contact: +/-4KV each item 25 times Air: +/-8KV 10 times 11 © 2022 Apacer Technology Inc. 4. DC Characteristics 4.1 SD Interface Timing (Default) 12 © 2022 Apacer Technology Inc. Symbol Parameter Min Max Unit Remark Clock CLK (All values are referred to min(VIH) and max(VIL)) fPP Clock frequency Data Transfer Mode 0 25 MHz fOD Clock frequency Identification Mode 0*/100 400 kHz tWL Clock low time 10 ns tWH Clock high time 10 ns tTLH Clock rise time 10 ns tTHL Clock fall time 10 ns Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Inputs CMD, DAT (referenced to CLK) tISU Input setup time 5 ns tIH Input hold time 5 ns Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Outputs CMD, DAT (referenced to CLK) tODLY Output Delay time during Data Transfer Mode 0 14 ns tODLY Output Delay time during Identification Mode 0 50 ns CL ≤ 40 pF (1 card) CL ≤ 40 pF (1 card) *0Hz means to stop the clock. The given minimum frequency range is for cases that require the clock to be continued. 4.2 SD Interface Timing (High-Speed Mode) 13 © 2022 Apacer Technology Inc. Symbol Parameter Min Max Unit Remark Clock CLK (All values are referred to min(VIH) and max(VIL)) fPP Clock frequency data transfer 0 50 MHz tWL Clock low time 7 - ns tWH Clock high time 7 - ns tTLH Clock rise time - 3 ns tTHL Clock fall time - 3 ns Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Inputs CMD, DAT (Referenced to CLK) tISU Input setup time 6 - ns tTH Input hold time 2 - ns Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Outputs CMD, DAT (Referenced to CLK) tODLY Output delay time during data transfer made - 14 ns tOH Output hold time 2.5 - ns CL Total system capacitance for each line* - 40 pF CL ≤ 40 pF (1 card) CL ≥ 15 pF (1 card) 1 card *In order to satisfy severe timing, host shall run on only one card 14 © 2022 Apacer Technology Inc. 4.3 SD Interface Timing (SDR12, SDR25, SDR50 and SDR104 Modes) 4.3.1 Input Clock Signal Timing Symbol Min Max Unit tCLK 4.8 - ns Remark 208MHz (Max.), Between rising edge, VCT = 0.975V tCR, tCF < 2.00ns (max.) at 208MHz, CCARD=10pF tCR, tCF - 0.2* tCLK ns Clock Duty 30 70 % tCR, tCF < 2.00ns (max.) at 100MHz, CCARD=10pF The absolute maximum value of tCR, tCF is 10ns regardless of clock frequency. SDR12, SDR25, SDR50 and SDR104 Input Timing Card Input Timing SDR104 Mode Symbol Min Max Unit tIS 1.40 - ns CCARD = 10pF, VCT = 0.975V tIH 0.80 - ns CCARD = 5pF, VCT = 0.975V Symbol Min Max Unit tIS 3.00 - ns CCARD = 10pF, VCT = 0.975V tIH 0.80 - ns CCARD = 5pF, VCT = 0.975V SDR12, SDR25 and SDR50 Modes 15 © 2022 Apacer Technology Inc. 4.3.2 Output Output Timing of Fixed Data Window Symbol Min Max Unit Remark tODLY - 7.5 ns tCLK ≥10.0ns, CL=30pF, using driver Type B, for SDR50. tODLY - 14 ns tCLK ≥20.0ns, CL=40pF, using driver Type B, for SDR25 and SDR12 TOH 1.5 - ns Hold time at the tODLY (min.). CL=15pF Output (SDR104 mode) Symbol Min Max Unit tOP 0 2 UI Card Output Phase ps Delay variable due to temperature change after tuning UI tODW = 2.88ns at 208MHz △tOP -350 tODW 0.60 +1550 - Remark 16 © 2022 Apacer Technology Inc. 4.4 SD Interface Timing (DDR50 Mode) Clock Signal Timing Symbol Min Max Unit Remark tCLK 20 - ns 50MHz (Max.), Between rising edge tCR, tCF - 0.2 tCLK ns tCR, tCF < 4.00ns (max.) at 50MHz, CCARD=10pF Clock Duty 45 55 % 17 © 2022 Apacer Technology Inc. Bus Timings – Parameters Values (DDR50 Mode) Symbol Parameter Min Max Unit Remark Input CMD (referenced to CLK rising edge) tISU Input setup time 6 - ns tIH Input hold time 0.8 - ns Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Output CMD (referenced to CLK rising edge) tODLY Output Delay time during Data Transfer Mode - 13.7 ns TOH Output Hold time 1.5 - ns CL ≤ 30 pF (1 card) CL ≥ 15 pF (1 card) Inputs DAT (referenced to CLK rising and falling edges) tISU2x Input setup time 3 - ns tIH2x Input hold time 0.8 - ns Ccard ≤ 10 pF (1 card) Ccard ≤ 10 pF (1 card) Outputs DAT (referenced to CLK rising and falling edges) tODLY2x Output Delay time during Data Transfer Mode - 7.0 ns TOH2x Output Hold time 1.5 - ns CL ≤ 25 pF (1 card) CL ≥ 15 pF (1 card) 18 © 2022 Apacer Technology Inc. 5. S.M.A.R.T. 5.1 Direct Host Access to SMART Data via SD General Command (CMD56) CMD 56 is structured as a 32-bit argument. The implementation of the general purpose functions will arrange the CMD56 argument into the following format:  Bit [0]: Indicates Read Mode when bit is set to [1] or Write Mode when bit is cleared [0]. Depending on the function, either Read Mode or Write Mode can be used.  Bit [7:1]: Indicates the index of the function to be executed:  Read Mode: Index = 0x10 Get SMART Command Information  Write Mode: Index = 0x08 Pre-Load SMART Command Information  Bit [15:8]: Function argument #1 (1-byte)  Bit [23:16]: Function argument #2 (1-byte)  Bit [31:24]: Function argument #3 (1-byte) 5.2 Process for Retrieving SMART Data Retrieving SMART data requires the following two commands executed in sequence and in accordance with the SD Association standard flowchart for CMD56 (see below). Step 1: Write Mode – [0x08] Pre-Load SMART Command Information Sequence Pre-Load SMART Command Information Command CMD56 Argument Expected Data “0” (Write Mode) “0001 000” (Index = 0x08) [8:511] All ‘0’ (Reserved) No expected data [0] [1:7] 19 © 2022 Apacer Technology Inc. Step 2: Read Mode – [0x10] Get SMART Command Information Sequence Get SMART Command Information Command CMD56 Argument Expected Data 1 sector (512 bytes) of response data byte[0-8] Flash ID byte[9-10] IC Version byte[11-12] FW Version byte[13] Reserved byte[14] CE Number byte[15] Reserved byte[16-17] Bad Block Replace Maximum byte[18] Reserved byte[32-63] Bad Block count per Die byte[64-65] Good Block Rate(%) byte[66-79] Reserved byte[80-83] Total Erase Count [0] “1” (Read Mode) byte[84-95] Reserved [1:7] “0010 000” byte[96-97] Endurance (Remain Life) (%) (Index = 0x10) byte[98-99] Average Erase Count – L* [8:31] All ‘0’ (Reserved) byte[100-101] Minimum Erase Count – L* byte[102-103] Maximum Erase Count – L* byte[104-105] Average Erase Count – H* byte[106-107] Minimum Erase Count – H* byte[108-109] Maximum Erase Count – H* byte[110-111] Reserved byte[112-115] Power Up Count byte[116-127] Reserved byte[128-129] Abnormal Power Off Count byte[130-159] Reserved byte[160-161] Total Refresh Count byte[176-183] Product “Marker” byte[184-215] Bad Block count per Die byte[216-511] Reserved *Please refer to technical note for High/Low byte definition. 20 © 2022 Apacer Technology Inc. 21 © 2022 Apacer Technology Inc. 6. Product Ordering Information 6.1 Product Code Designations Apacer’s CV110-SD is available in different configurations and densities. See the chart below for a comprehensive list of options for the CV110-SD series devices. 1 2 3 A J 6 4 5 6 7 8 9 10 11 12 13 14 15 16 1 1 2 X X A . X X X 1 0 Code . Code 1-3 (Product Line & Form Factor) Code 5-6 (Model/Solution) Code 7-8 (Product Capacity) Code 9 (Flash Type & Product Temp) Code 10 (Product Spec) Code 12-14 (Version Number) Code 15-16 (Firmware Version) CV110-SD CV110 2F: 32GB 2G: 64GB 2H: 128GB 2J: 256GB G: 3D TLC Standard Temperature H: 3D TLC Wide Temperature SD Card Random number generated by system Firmware page mode 22 © 2022 Apacer Technology Inc. 6.2 Valid Combinations The following table lists the available models of the CV110-SD series which are in mass production or will be in mass production. Consult your Apacer sales representative to confirm availability of valid combinations and to determine availability of new combinations. Capacity Standard Temperature Wide Temperature 32GB AJ6.112FGA.00110 AJ6.112FHA.00110 64GB AJ6.112GGA.00110 AJ6.112GHA.00110 128GB AJ6.112HGA.00110 AJ6.112HHA.00110 256GB AJ6.112JGA.00110 AJ6.112JHA.00110 23 © 2022 Apacer Technology Inc. Revision History Revision 0.1 Description Date Preliminary release 9/9/2019 - Completed endurance rating for 64GB 1.0 - Added Power Failure Management to Flash Management on Specifications Overview 10/3/2019 - Added 1.2.5 Power Failure Management 1.1 Updated supported bus mode to Class 10 with U3 and UHS-I at Bus Speed Mode on Specifications Overview 3/31/2020 1.2 Changed support for U3 to U1 at Bus Speed Mode on Specifications Overview page 4/8/2021 - Updated Performance and Power Consumption on Specifications Overview page 1.3 - Updated Tables 2-3 and 2-5 6/1/2021 - Updated 6. Product Ordering Information due to FW change - Removed DataRAID support 1.4 - Updated NAND flash type on the cover page and Specifications Overview page from Toshiba to Kioxia 6/9/2021 1.5 Modified SD card version from 6.1 to 5.0 4/19/2022 24 © 2022 Apacer Technology Inc. Global Presence Taiwan (Headquarters) U.S.A. Apacer Technology Inc. 1F., No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City 236, Taiwan R.O.C. Tel: 886-2-2267-8000 Fax: 886-2-2267-2261 amtsales@apacer.com Apacer Memory America, Inc. 46732 Lakeview Blvd., Fremont, CA 94538 Tel: 1-408-518-8699 Fax: 1-510-249-9551 sa@apacerus.com Japan Europe Apacer Technology Corp. 6F, Daiyontamachi Bldg., 2-17-12, Shibaura, Minato-Ku, Tokyo, 108-0023, Japan Tel: 81-3-5419-2668 Fax: 81-3-5419-0018 jpservices@apacer.com Apacer Technology B.V. Science Park Eindhoven 5051 5692 EB Son, The Netherlands Tel: 31-40-267-0000 Fax: 31-40-290-0686 sales@apacer.nl China India Apacer Electronic (Shanghai) Co., Ltd Room D, 22/FL, No.2, Lane 600, JieyunPlaza, Tianshan RD, Shanghai, 200051, China Tel: 86-21-6228-9939 Fax: 86-21-6228-9936 sales@apacer.com.cn Apacer Technologies Pvt Ltd, 1874, South End C Cross, 9th Block Jayanagar, Bangalore-560069, India Tel: 91-80-4152-9061/62 Fax: 91-80-4170-0215 sales_india@apacer.com 25 © 2022 Apacer Technology Inc.