AS2M040120P

AS1M040120P N-Channel Silicon Carbide Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID@25℃ 1200V 55mΩ@20V 60A Feature Application  High Blocking Voltage With Low On-Resistance  Power Supplies  High Speed Switching With Low Capacitance  Switch Mode Power Supplies  Easy to Parallel and Simple to Drive  High Voltage DC/DC Converters  Motor Drivers  Pulsed Power Applications Package Marking Circuit diagram AS1M040120P XXXXX G TO-247-3 D S Absolute maximum ratings (TC=25℃ unless otherwise noted) Parameter Symbol Test Condition Value Unit 1200 V Drain-Source Voltage VDSmax VGS = 0V, IDS =100µA Gate-Source Voltage VGSmax Absolute maximum values -10/+25 V Gate-Source Voltage VGSOP Recommended operational values -5/+20 V ID VGS = 20V,TC=25℃ 60 A ID VGS = 20V,TC=100℃ 40 A Pulsed Drain Current IDM Pule width tp limitea by Tjmax 160 A Power Dissipation PD TC=25℃,TJ=150℃ 330 W 0.34 ℃/W 40 ℃/W Continuous Drain Current Thermal Resistance RθJC Junction-to-Case Thermal Resistance RθJA Junction-to-Ambient Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Page 1 Document ID Issued Date Revised Date Revision Page. AS-3270003 2013/03/08 2021/06/18 B 6 AS1M040120P N-Channel Silicon Carbide Power MOSFET Electrical characteristics (TC=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, IDS =100µA Zero gate voltage drain current IDSS VDS =1200V,VGS = 0V 100 µA Gate-Source leakage current IGSS+ VGS =25V, VDS = 0V 250 nA Gate-Source leakage current IGSS- VGS =-10V, VDS = 0V 250 nA Gate threshold voltage VGS(th) Drain-source on-resistance RDS(on) VDS =VGS, IDS =10mA 1200 V 1.9 4.0 VDS =VGS, IDS =10mA ,TJ=150℃ 1.8 VGS =20V, ID =40A 40 VGS =20V, ID =40A,TJ=150℃ 80 55 V mΩ Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss COSS Stored Energy Eoss Turn-on Switching Energy Eon Turn-off Switching Energy Eoff Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time 2946 167 VDS =1000V,VGS =0V,f =1MHz VAC=25mV 6.6 92 µJ 1.1 VDS=800V,VGS=-5V/20V, ID =40A,RG(ext)=2.5Ω,L=100µH mJ 0.85 142 VDS =800V,VGS =-5V/20V, ID =40A 37 nC 18 12 VDS=800V,VGS=-5V/20V, ID =40A,RG(ext)=2.5Ω, RL=20Ω 10 nS 25 tf Internal Gate Resistance pF 6.2 RG f =1MHz ,VAC=25mV Diode Forward Current IS TC=25℃ Diode Forward voltage VDS 2.3 Ω Source-Drain Diode characteristics Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm 62 VGS =-5V, ISD=20A 4.5 VGS =-5V, ISD=20A,TJ=150℃ 4.2 ISD=40A,VR=800V Page 2 A V 41 nS 142 nC 6 A Document ID Issued Date Revised Date Revision Page. AS-3270003 2013/03/08 2021/06/18 B 6 AS1M040120P N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 3 Document ID Issued Date Revised Date Revision Page. AS-3270003 2013/03/08 2021/06/18 B 6 AS1M040120P N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 4 Document ID Issued Date Revised Date Revision Page. AS-3270003 2013/03/08 2021/06/18 B 6 AS1M040120P N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 5 Document ID Issued Date Revised Date Revision Page. AS-3270003 2013/03/08 2021/06/18 B 6 AS1M040120P N-Channel Silicon Carbide Power MOSFET TO-247-3 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.800 5.250 0.189 0.207 A1 2.250 2.550 0.089 0.100 b 1.050 1.350 0.041 0.053 b1 2.850 3.400 0.112 0.134 b2 1.900 2.420 0.075 0.095 c 0.550 0.700 0.022 0.028 c1 1.900 2.200 0.075 0.087 D 15.700 16.200 0.618 0.638 D1 13.000 14.200 0.512 0.559 E 16.250 17.650 0.640 0.695 E1 3.650 5.200 0.144 0.205 E2 3.650 5.200 0.144 0.205 L 19.800 20.350 0.780 0.801 L1 4.000 4.500 0.157 0.177 L2 20.800 21.200 0.819 0.835 Φ 7.180 BSC 0.283 BSC e 5.440 BSC 0.214 BSC H 6.000 6.300 Page 6 0.236 0.248 Document ID Issued Date Revised Date Revision Page. AS-3270003 2013/03/08 2021/06/18 B 6