AS3D020065A

AS3D02 0065A 650V,20A Silicon Carbide Schottky Diode Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature = 650 V IF ( TC≤135℃) = 25 A = 37 nC VRRM QC Package Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Without Thermal Runaway  Essentially No Switching Losses 1 2 TO-220-2 Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wind Power Station Part Number Package Marking AS3D020065A TO-220-2 ASD2065A http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 1 Document ID Issued Date AS-3243007 2022/05/10 Revised Date - Revision Page. A 5 AS3D02 0065A 650V,20A Silicon Carbide Schottky Diode Maximum Ratings Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V TC = 25℃ VRSM Surge Peak Reverse Voltage 650 V TC = 25℃ VR DC Blocking Voltage 650 V TC = 25℃ IF Forward Current 56 25 20 A Note TC ≤ 25℃ TC ≤ 135℃ TC ≤ 147℃ IFSM Non-Repetitive Forward Surge Current 170 A TC = 25℃, tp = 8.3ms, Half Sine Wave Ptot Power Dissipation 176 W TC = 25℃ TC Maximum Case Temperature 147 ℃ -55 to 175 ℃ 1 Nm TJ, TSTG Operating Junction and Storage Temperature TO-220-2 Mounting Torque Fig.3 M3 Screw Electrical Characteristics Symbol Parameter VF Forward Voltage IR Reverse Current Typ. Max. 1.4 1.65 1.7 2.3 2 20 10 200 Unit V µA 1190 C Total Capacitance 115 Total Capacitive Charge Note IF = 20A, TJ = 25℃ Fig.1 IF = 20A, TJ = 175℃ VR = 650V, TJ = 25℃ Fig.2 VR = 650V, TJ = 175℃ VR = 0V, TJ = 25℃, f = 1MHz / pF 96 QC Test Conditions VR = 200V, TJ = 25℃, f = 1MHz Fig.5 VR = 400V, TJ = 25℃, f = 1MHz 37 / nC VR = 650V, IF = 20A Fig.4 di/dt = 200A/µs, TJ = 25℃ Thermal Characteristics Symbol Parameter Typ. Unit Note 0.85 ℃/W Fig.6 RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance from Junction to Ambient 80 ℃/W Tsold Soldering Temperature 260 ℃ http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 2 Document ID Issued Date AS-3243007 2022/05/10 Revised Date - Revision Page. A 5 AS3D02 0065A 650V,20A Silicon Carbide Schottky Diode IF (A) IR (μA) Typical Performance VF (V) VR (V) Figure 1. Forward Characteristics QC (nC) PTot (W) Figure 2. Reverse Characteristics TC (℃) VR (V) Figure 3. Power Derating http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Figure 4. Total Capacitive Charge vs. Reverse Voltage Page 3 Document ID Issued Date AS-3243007 2022/05/10 Revised Date - Revision Page. A 5 AS3D02 0065A 650V,20A Silicon Carbide Schottky Diode C (pF) Thermal Resistance（℃/W） Typical Performance VR (V) T(sec) Figure 5. Total Capacitance vs. Reverse Voltage http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 4 Figure 6. Transient Thermal Impedance Document ID Issued Date AS-3243007 2022/05/10 Revised Date - Revision Page. A 5 AS3D02 0065A 650V,20A Silicon Carbide Schottky Diode Package Dimensions Package TO-220-2 C A B E Symbol Min. (mm) Typ. (mm) Max. (mm) A 9.17 10.08 10.91 B 27.00 28.58 30.00 C 3.89 4.50 5.00 D 4.20 5.10 5.80 E 11.70 13.30 14.97 F 0.50 0.80 1.21 F D http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 5 Document ID Issued Date AS-3243007 2022/05/10 Revised Date - Revision Page. A 5