AS3D030065C

AS3D030065C 650V,30A Silicon Carbide Schottky Diode Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature = 650 V IF ( TC≤135℃) = 35 A = 66 nC VRRM QC Package Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Without Thermal Runaway  Essentially No Switching Losses 1 2 TO-247-2 Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wind Power Station Part Number Package Marking AS3D030065C TO-247-2 ASD3065C http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 1 Document ID Issued Date AS-3243008 2022/05/10 Revised Date - Revision Page. A 5 AS3D030065C 650V,30A Silicon Carbide Schottky Diode Maximum Ratings Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V TC = 25℃ VRSM Surge Peak Reverse Voltage 650 V TC = 25℃ VR DC Blocking Voltage 650 V TC = 25℃ IF Forward Current 35 30 A TC ≤ 143℃ IFSM Non-Repetitive Forward Surge Current 210 A TC = 25℃, tp = 8.3ms, Half Sine Wave Ptot Power Dissipation 234 W TC = 25℃ TC Maximum Case Temperature 143 ℃ -55 to 175 ℃ 1 Nm TJ, TSTG Operating Junction and Storage Temperature TO-247-2 Mounting Torque TC ≤ 135℃ Fig.3 Fig.4 M3 Screw Electrical Characteristics Symbol Parameter VF Forward Voltage IR Reverse Current Typ. Max. 1.5 1.8 1.78 2.3 2 20 15 200 Unit V µA 1805 C Total Capacitance 176 Total Capacitive Charge 66 Note IF = 30A, TJ = 25℃ Fig.1 IF = 30A, TJ = 175℃ VR = 650V, TJ = 25℃ Fig.2 VR = 650V, TJ = 175℃ VR = 0V, TJ = 25℃, f = 1MHz / pF 145 QC Test Conditions VR = 200V, TJ = 25℃, f = 1MHz Fig.6 VR = 400V, TJ = 25℃, f = 1MHz / nC VR = 650V, IF = 30A Fig.5 di/dt = 200A/µs, TJ = 25℃ Thermal Characteristics Symbol Parameter Typ. Unit Note 0.64 ℃/W Fig.7 RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance from Junction to Ambient 80 ℃/W Tsold Soldering Temperature 260 ℃ http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 2 Document ID Issued Date AS-3243008 2022/05/10 Revised Date - Revision Page. A 5 AS3D030065C 650V,30A Silicon Carbide Schottky Diode IF (A) IR (μA) Typical Performance VF (V) VR (V) Figure 2. Reverse Characteristics PTot (W) IF(peak) (A) Figure 1. Forward Characteristics TC (℃) TC (℃) Figure 3. Current Derating http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Figure 4. Power Derating Page 3 Document ID Issued Date AS-3243008 2022/05/10 Revised Date - Revision Page. A 5 AS3D030065C 650V,30A Silicon Carbide Schottky Diode QC (nC) C（pF） Typical Performance VR (V) VR(V) Figure 6. Total Capacitance vs. Reverse Voltage Thermal Resistance（℃/W） Figure 5. Total Capacitive Charge vs. Reverse T(sec) Figure 7. Transient Thermal Impedance http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 4 Document ID Issued Date AS-3243008 2022/05/10 Revised Date - Revision Page. A 5 AS3D030065C 650V,30A Silicon Carbide Schottky Diode Package Dimensions Package TO-247-2 A C D B G F E http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Symbol Min. (mm) Typ. (mm) Max. (mm) A 14.18 15.75 17.33 B 18.45 20.5 22.55 C 4.50 5.00 5.50 D 3.15 3.50 3.85 E 1.08 1.20 1.32 F 18.27 20.30 22.33 G 4.21 4.68 5.15 Page 5 Document ID Issued Date AS-3243008 2022/05/10 Revised Date - Revision Page. A 5