AS3D040120P2

AS3D0401 2 0P2 1200V,40A Silicon Carbide Schottky Diode Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature VRRM = IF ( TC≤135℃) = QC = 1200 V 48 A** 102 nC** *Per Leg, **Per Device Package Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Without Thermal Runaway  Essentially No Switching Losses 1 2 3 TO-247-3 Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wind Power Station Part Number Package Marking AS3D040120P2 TO-247-3 ASD40120P2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 1 Document ID Issued Date AS-3243023 2022/05/10 Revised Date - Revision Page. A 5 AS3D0401 2 0P2 1200V,40A Silicon Carbide Schottky Diode Maximum Ratings Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V TC = 25℃ VRSM Surge Peak Reverse Voltage 1200 V TC = 25℃ VR DC Blocking Voltage 1200 V TC = 25℃ IF Forward Current (Per leg/Device) Note TC ≤ 25℃ 52/104 24/48 20/40 A TC ≤ 135℃ TC ≤ 146℃ IFSM Non-Repetitive Forward Surge Current 180* A TC = 25℃, tp = 8.3ms, Half Sine Wave Ptot Power Dissipation (Per leg/Device) 230/ 460 W TC = 25℃ TC Maximum Case Temperature 146 ℃ -55 to 175 ℃ 1 Nm TJ, TSTG Operating Junction and Storage Temperature TO-247 Mounting Torque Fig.3 M3 Screw Electrical Characteristics Symbol Parameter VF Forward Voltage IR Reverse Current Typ. Max. 1.55 1.8 2.2 2.5 5 20 30 200 Unit V µA 1280 C Total Capacitance 95 Total Capacitive Charge 51 Note IF = 20A, TJ = 25℃ Fig.1 IF = 20A, TJ = 175℃ VR = 1200V, TJ = 25℃ Fig.2 VR = 1200V, TJ = 175℃ VR = 0V, TJ = 25℃, f = 1MHz / pF 77 QC Test Conditions VR = 400V, TJ = 25℃, f = 1MHz Fig.5 VR = 800V, TJ = 25℃, f = 1MHz / nC VR = 800V, IF = 20A Fig.4 di/dt = 200A/µs, TJ = 25℃ Thermal Characteristics Symbol Parameter Typ. Unit Note 0.65* 0.33** ℃/W Fig.6 RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance from Junction to Ambient 80 ℃/W Tsold Soldering Temperature 260 ℃ *Per Leg, **Per Device http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 2 Document ID Issued Date AS-3243023 2022/05/10 Revised Date - Revision Page. A 5 AS3D0401 2 0P2 1200V,40A Silicon Carbide Schottky Diode IF (A) IR (μA) Typical Performance (Per Leg) VF (V) VR (V) Figure 1. Forward Characteristics QC (nC) PTot (W) Figure 2. Reverse Characteristics TC (℃) VR (V) Figure 3. Power Derating http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Figure 4. Total Capacitive Charge vs. Reverse Voltage Page 3 Document ID Issued Date AS-3243023 2022/05/10 Revised Date - Revision Page. A 5 AS3D0401 2 0P2 1200V,40A Silicon Carbide Schottky Diode C (pF) Thermal Resistance（℃/W） Typical Performance (Per Leg) VR (V) T(sec) Figure 5. Total Capacitance vs. Reverse Voltage http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 4 Figure 6. Transient Thermal Impedance Document ID Issued Date AS-3243023 2022/05/10 Revised Date - Revision Page. A 5 AS3D0401 2 0P2 1200V,40A Silicon Carbide Schottky Diode Package Dimensions Package TO-247-3 A C D B G H F E http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Symbol Min. (mm) Typ. (mm) Max. (mm) A 14.18 15.75 17.33 B 18.45 20.5 22.55 C 4.50 5.00 5.50 D 3.15 3.50 3.85 E 1.08 1.20 1.32 F 18.27 20.30 22.33 G 4.21 4.68 5.15 H 4.91 5.46 6.01 Page 5 Document ID Issued Date AS-3243023 2022/05/10 Revised Date - Revision Page. A 5