BAV21WS

BAV19WS THRU BAV21WS Switching Diode -100V-200V 200mA Surface Mount Package outline SOD-323 0.016(0.40) 0.010(0.25) • Low Reverse Current. • Surface Mount Package Ideally Suited for Automatic Insertion. • Fast Switching Speed. • For General Purpose Switching Applications. • Silicon epitaxial planar chip. • Lead-free parts meet RoHS requirments. • Compliant to Halogen-free 0.055(1.40) 0.047(1.20) Features 0.071(1.80) 0.063(1.60) Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOD-323 • Terminals : Solder plated, solderable per 0.003(0.08) 0.008(0.20) 0.039(1.00) 0.031(0.80) 0.108(2.75) 0.096(2.45) MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any Dimensions in inches and (millimeters) Maximum ratings and Electrical Characteristics (AT PARAMETER T A=25 oC unless otherwise noted) CONDITIONS Non-repetitive peak reverse voltage V RRM VR Working Peak Reverse Voltage V R(RMS) RMS Reverse Voltage Average rectified output current(1) Non-repetitive peak forward surge current Symbol BAV19WS BAV20WS BAV21WS @t = 8.3ms Peak Forward Surge Current 120 200 UNIT 250 V V 100 150 200 70 105 140 V IO 200 mA I FSM 1.7 A I FRM 625 mA PD 200 mW R θJA 625 °C/W Operating junction temperature range TJ -55 ~ +150 o C Storage temperature range T STG -55 ~ +150 o C Power dissipation Typical Thermal resistance Junction to ambient air(1) Maximum Forward voltage I F = 100 mA I F = 200 mA VF 1.00 1.25 V Maximum Reverse leakage current @ Working Peak Reverse Voltage IR 100 nA Maximum Total capacitance V R = 0 V , f = 1.0MHz CJ 5.0 pF Maximum Reverse recovery time I F = I R = 30mA , I RR = 0.1 X I R , R L = 100 OHM t rr 50 ns Note 1. Valid provided that electrodes are kept at ambient temperature. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 1 Document ID Issued Date Revised Date AS-3120012 2003/03/08 2022/05/16 Revision E Page. 3 BAV19WS THRU BAV21WS Switching Diode -100V-200V 200mA Surface Mount Rating and characteristic curves(BAV19WS THRU BAV21WS) Forward Characteristics Reverse 100 Ta=100 ℃ 00 ℃ I R (nA) 100 5℃ REVERSE CURRENT 30 Ta =2 30 Ta =1 I F(mA) 300 FORWARD CURRENT Characteristics 1000 400 10 10 Ta=25 ℃ 3 1 3 0.3 1 0.2 0.4 0.6 0.8 FORWARD VOLTAGE 1.0 1.2 0.1 1 1.4 50 VF (V) 150 200 250 VR (V) Power Derating Curve Capacitance Characteristics 1.4 100 REVERSE VOLTAGE 300 250 PD (mW) 1.2 1.0 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CJ (pF) Ta=25 ℃ f=1MHz 0.8 0.6 200 150 100 50 0.4 0 0 5 10 REVERSE VOLTAGE http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 15 20 VR (V) 0 25 50 75 AMBIENT TEMPERATURE Page 2 100 Ta 125 150 (℃ ) Document ID Issued Date Revised Date AS-3120012 2003/03/08 2022/05/16 Revision E Page. 3 BAV19WS THRU BAV21WS Switching Diode -100V-200V 200mA Surface Mount Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Marking Type number Marking code BAV19WS A8 BAV20WS T2 BAV21WS T3 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SOD-323 0.032 (0.82) 0.022 (0.56) 0.069 (1.75) http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 3 Document ID Issued Date Revised Date AS-3120012 2003/03/08 2022/05/16 Revision E Page. 3