MMBT2907A

MMBT2907 / MMBT2907A General Purpose PNP Transistor Package outline Features • High collector-emitterbreakdien voltage. • PNP silicon epitaxial planar transistor, is designed for general SOT-23 0.020 (0.50) (B) (C) (A) 0.063 (1.60) Mechanical data 0.012 (0.30) 0.045 (1.15) .084(2.10) .068(1.70) 0.120 (3.04) 0.110 (2.80) 0.034 (0.85) purpose and amplifier applications. • Capable of 225mW power dissipation. • Lead-free parts meet RoHS requirments. • Suffix "-H" indicates Halogen-free part, ex.MMBT2907-H. 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) 0.051 (1.30) 0.003 (0.09) 0.007 (0.18) 0.083 (2.10) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.035 (0.89) MIL-STD-750, Method 2026 • Mounting Position : Any Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER Symbol MMBT2907 Collector-emitter voltage V CEO -40 Collector-base voltage V CBO -60 V Emitter-base voltage V EBO -5.0 V IC -600 mA Total device dissipation FR-5 board T A = 25 C (1) Derate above 25 OC PD 225 mW 1.8 mW/ OC Thermal resistance R θJA 556 PD 300 mW 2.4 mW/ OC Collector current - continuous O Junction to ambient O Total device dissipation alumina substrate(2) T A = 25 C Thermal resistance Junction to ambient O Derate above 25 C R θJA Operating junction temperature range Storage temperature range UNIT MMBT2907A -60 V O O 417 Page 1 C/W TJ -55 to +150 o C T STG -55 to +150 o C 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 C/W Document ID Issued Date Revised Date Revision Page. AS-3140012 2013/03/08 2016/05/16 D 6 MMBT2907 / MMBT2907A General Purpose PNP Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) OFF CHARACTERISTICS MMBT2907 MMBT2907A uA uA MMBT2907 MMBT2907A uAdc MMBT2907 MMBT2907A MMBT2907A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) ON CHARACTERISTICS MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 2 Document ID Issued Date Revised Date Revision Page. AS-3140012 2013/03/08 2016/05/16 D 6 MMBT2907 / MMBT2907A General Purpose PNP Transistor ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) SMALL–SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS 1 . Pulse Test : Pulse Width ≤300 μ s , Duty Cycle ≤2 . 0 %. 2 . f T is defined as the frequency at which | h f e | extrapolates to unity . INPUT INPUT Z o = 50 Ω Z O= 50Ω PRF = 150 PPS -30V PRF = 150 PPS RISE TIME